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    Optical modulating element
    165.
    发明专利
    Optical modulating element 失效
    光学调制元件

    公开(公告)号：JPS59181317A

    公开(公告)日：1984-10-15

    申请号：JP5694783

    申请日：1983-03-31

    Applicant: Sumitomo Electric Ind Ltd

    Inventor： TADA KUNIO ,  NISHIWAKI YOSHIKAZU ,  MATSUOKA HARUJI

    IPC: G02B6/12 ,  G02F1/015 ,  G02F1/025 ,  G02F1/313

    CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0151 ,  G02F2201/063 ,  G02F2202/101

    Abstract: PURPOSE: To relieve etching conditions for two parallel buffer layers by setting the carrier density and refractive index of the optical waveguide layer and buffer layers formed successively on a substrate layer in a way as to satisfy prescribed conditions.
    CONSTITUTION: An optical modulating element consists successively from below of an ohmic electrode 5, an n
    + (p
    + )Al
    u Ga
    1-u As substrate 1, an n
    + (p
    + )Al
    x Ga
    1-n As substrate layer 2, an n(p)Al
    z Ga
    1-z As optical waveguide layer 3, n(p)Al
    y Ga
    1-y As buffer layers (two) 5 and a Schottkey electrode 6. n, p denote semiconductors of n type and p type, and n
    + , p
    + denote the parts where the carrier density is particularly larger than n, p. n(p) indicates that either the n type or the p type is acceptable. (z) is made substantially smaller than (x), (y) to make the refractive index of the layer 3 higher by about 0.1% than the layer 4 and the layer 2 to confine light. The carrier density is made large in the layer 2 and the substrate 1 and small in the waveguide 3 and the layer 4. The etching conditions for the layer 4 are thus relieved.
    COPYRIGHT: (C)1984,JPO&Japio

    Abstract translation: 目的：通过设置在基板层上连续形成的光波导层和缓冲层的载流子密度和折射率，以满足规定的条件，来缓解两个平行缓冲层的蚀刻条件。 构成：光调制元件从欧姆电极5，n +（p +）AluGa1-uAs衬底1，n +（p +）Al x Ga 1-nAs衬底层2的下方依次构成 ，n（p）AlzGa1-zAs光波导层3，n（p）Al y Ga 1-y As缓冲层（2）5和Schottkey电极6.n，p表示n型和p型的半导体，n + ，p +表示载流子密度特别大于n，p的部分。 n（p）表示n型或p型均可接受。 （z）比（x），（y）小得多，使得层3的折射率比层4和层2高约0.1％，以限制光。 层2和基板1的载流子密度较大，波导3和层4的载流子密度较小。因此，层4的蚀刻条件得以缓解。

    OPTICAL MODULATOR
    166.
    发明公开
    OPTICAL MODULATOR 审中-公开

    公开(公告)号：US20240361624A1

    公开(公告)日：2024-10-31

    申请号：US18768275

    申请日：2024-07-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Satoki HAMAMURA ,  Yasuhiro AIDA

    IPC: G02F1/035

    CPC classification number: G02F1/035 ,  G02F2201/063 ,  G02F2202/06 ,  G02F2202/42

    Abstract: An optical modulator includes an optical waveguide, a first electrode, a second electrode, and a first low dielectric constant layer. The optical waveguide includes a material having an electro-optic effect. The first electrode includes a semiconductor material and is spaced by a gap from the optical waveguide. The second electrode is positioned to provide a potential difference with the first electrode and apply an electric field to the optical waveguide. The first low dielectric constant layer has a refractive index smaller than that of the optical waveguide, and is provided in the gap between the first electrode and the optical waveguide.

    OPTICAL DEVICE, OPTICAL TRANSMITTING DEVICE, AND OPTICAL RECEIVING DEVICE
    167.
    发明公开
    OPTICAL DEVICE, OPTICAL TRANSMITTING DEVICE, AND OPTICAL RECEIVING DEVICE 审中-公开

    公开(公告)号：US20240248330A1

    公开(公告)日：2024-07-25

    申请号：US18497521

    申请日：2023-10-30

    Applicant: FUJITSU OPTICAL COMPONENTS LIMITED

    Inventor： Masaki SUGIYAMA

    IPC: G02F1/025 ,  G02F1/03

    CPC classification number: G02F1/025 ,  G02F1/0311 ,  G02F1/0316 ,  G02F2201/063

    Abstract: An optical device includes a rib optical waveguide formed on a substrate, a P doped region formed in one of slab regions of the rib optical waveguide, an N doped region formed in the other one of the slab regions of the rib optical waveguide, a first electrode connected to the P doped region, a second electrode connected to the N doped region, and an optical absorption structure. The optical absorption structure implements optical absorption of signal light passing through the rib optical waveguide according to an electric current that flows between the first electrode and the second electrode, and makes, in the optical absorption, the signal light passing through an optical input portion of the rib optical waveguide lower in optical attenuation rate than the signal light passing through at least part of the rib optical waveguide, the part excluding the optical input portion.

    METHOD AND SYSTEM FOR A VERTICAL JUNCTION HIGH-SPEED PHASE MODULATOR
    168.
    发明公开
    METHOD AND SYSTEM FOR A VERTICAL JUNCTION HIGH-SPEED PHASE MODULATOR 审中-公开

    公开(公告)号：US20240004260A1

    公开(公告)日：2024-01-04

    申请号：US18466685

    申请日：2023-09-13

    Applicant: Cisco Technology, Inc.

    Inventor： Attila MEKIS ,  Subal SAHNI ,  Yannick DE KONINCK ,  Gianlorenzo MASINI ,  Faezeh GHOLAMI

    IPC: G02F1/225 ,  G02F1/025

    CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2201/12 ,  G02F2201/063 ,  G02F1/212

    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

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