Abstract:
A field emission device (100) including a substrate (130), an emitter layer (106), a spacer layer (104) and a gate layer (102). In one preferred embodiment, the emitter layer (106) is made of a resistive material, and has a side end (120) that has an edge (122). The spacer layer (104) is on and over only a portion of the emitter layer (106) to expose the edge (122). The gate layer (102), on the spacer layer (104), also has a side end (128) that is tapered to form a wedge (129) with an edge. In one application, the device (100) is used in a flat panel display (90), with a screen (124). The screen (124) is at a selected positive voltage and is positioned above the gate layer (102). When a selected potential difference is applied between the emitter layer (106) and the gate layer (102), an electron-extraction field is established between the edge (132) of the gate layer (102) and the edge (122) of the emitter layer (106) to extract electrons from the edge (122) of the emitter layer (106). Then, the electrons are attracted to the screen (124). The wedge (129) reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer (106) enhances the uniformity of the electrons emitted along the edge (122) of the emitter layer (106).
Abstract:
A matrix addressed diode flat panel display (820) including a diode pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes (210-280), each cathode including a plurality of cathode conductive material (440) and a layer of low effective work-function material (460) deposited over the cathode conductive material and an anode assembly having a plurality of anodes (290-292), each anode including a layer of anode conductive material (410) and a cathodoluminescent material (430) deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive the charged particle emissions from the cathode assembly. The display further includes means (100) for selectively varying field emissions between the plurality of corresponding light-emitting anodes and field-emission cathodes.
Abstract:
A vertical microelectronic field emitter (10) includes a conductive top portion (15) and a resistive bottom portion (16) in an elongated column (12) which extends vertically from a horizontal substrate (11). An emitter electrode (17) may be formed at the base of the column, and an extraction electrode (18) may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips (15) on the face of a substrate and then forming trenches (22) in the substrate (11) around the tips to form columns (12) in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric (19) and a conductor layer (18) is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate (11) with the trenches defining columns (12) in the substrate. Then, tips (15) are formed on top of the columns. The trenches are filled with dielectric and the conductor layers is formed on the dielectric to form the extraction electrodes.
Abstract:
Un écran plat à micropointes protégées individuellement par dipôle est constitué d'une cathode émissive à émission de champ comportant des micropointes (12) protégées chacune individuellement grâce à un couplage électrique en série avec un dipôle (13) formé d'un transistor à effet de champ à déplétion, les dipôles étant réalisés de telle façon que l'on puisse modifier sur toutes les pointes en même temps le seuil de protection et le niveau du courant d'émission, en agissant uniquement sur la polarisation du substrat (14) commun de ces dipôles. Il concerne d'une façon générale le domaine des écrans d'affichage ou de visualisation.
Abstract:
A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.
Abstract:
By incorporating two-pole circuits (13) as switching elements in a picture display device based on field emission, the emission (and hence the picture intensity) is substantially defined by the charge of a capacitance (15) associated with a part of a pixel (8). Charge-controlled drive leads to a more accurate adjustment than the voltage-controlled drive used until now and leads to lower drive voltages, less power consumption and a longer lifetime of the phosphors used in the display device.
Abstract:
An electronic device employing controlled (102) cold-cathode field-induced electron emission device(s) is set forth wherein controlling sources, drivers, select logic, and interconnecting lines (103) and paths are integrated, directly within a single structure.
Abstract:
A variety of field emission devices (308) and field emission device structures which employ non-substrate layers of single-crystal silicon (203) are provided. By employing non-substrate layers of single-crystal silicon (203), improved emission control is achieved and improved performance controlling devices (406) can be formed within the device structure.