公开(公告)号：JP2000009925A

公开(公告)日：2000-01-14

申请号：JP24215898

申请日：1998-08-27

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RIN IKYO ,  HAKU GENKICHI

IPC: G02B5/20 ,  H01L27/14 ,  H01L27/146

Abstract: PROBLEM TO BE SOLVED: To provide a process for producing a complementary type metal-oxide- semiconductor (CMOS) photosensitive device. SOLUTION: First passivation layers 41 formed from a material contg. silicon nitride or silicon oxide are heated so as to be melted. Color filters 43 including red filter regions, green filter regions and blue filter regions are thereafter formed on the first passivation layers 41. The color filters 43 are formed from a material contg. an acrylic resin. A second passivation layer 44 which is plane on the front surface is formed on the color filters 43 from the material contg. the silicon nitride or the silicon oxide. Next, apertures are formed via the second passivation layer 44 and the first passivation layers 41 by carrying out photolithography work and etching work. Finally, microlens layers 48 are formed on the second passivation layer 44 so as to exist on the respective color filters.

公开(公告)号：JPH11354770A

公开(公告)日：1999-12-24

申请号：JP21607198

申请日：1998-07-30

Applicant: UNITED MICROELECTRONICS CORP

Inventor： HAKU GENKICHI ,  TEI KAJIN ,  RIN IKYO

IPC: G02B5/20 ,  H01L27/14

Abstract: PROBLEM TO BE SOLVED: To completely remove a color filter film by, after a first plasma process is performed for solvent process which softens a color film, performing a second oxygen plasma process for removing a remaining part of the color filter film. SOLUTION: Related to a re-process, for example, a patterning process 40 for a color filter film is performed first. Then, a thermal process 42 such as solidifying process may be performed on the color filter film. The thermal process 42 is a pre-baking process for raising the density of the color filter film. Then an oxygen plasma process 44 is performed to remove the most part of the color filter film. After that, a remaining color filter film is softened in a solvent process 446. Further, another oxygen plasma process 48 is performed to remove the remaining color filter film. Thus, the color filter film is entirely removed.

公开(公告)号：JPH11330243A

公开(公告)日：1999-11-30

申请号：JP22879698

申请日：1998-08-13

Applicant: UNITED MICROELECTRONICS CORP

Inventor： TSAI MENG JIN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To simplify a manufacturing process and prevent troubles due to focal point error by making an oxide layer have a protruding region positioned directly above a conductive layer, forming an insulating layer on the oxide layer, removing the part of the insulating film in the protruding region by polishing and forming an opening part on the conductive layer. SOLUTION: An oxide layer 56 is formed on conductive layers 53, 54 and on a substrate 50. Protruding regions 57 and 61 are formed. The protruding region 61 is positioned on the conductive layer 54, and the protruding region 57 is positioned on the conductive layer 53. An insulating layer 58 is formed on the oxide layer 56 by low-pressure chemical deposition. A part of the insulating layer 58 in the protruding region 61 is removed by chemimechanical polishing, an opening part 49 is formed and the oxide layer 56 is exposed from the opening part. Thus, the number of photolithography process and etching process can be reduced by one, and unnecessary contact between the conductive layers is prevented.

公开(公告)号：JPH11312796A

公开(公告)日：1999-11-09

申请号：JP1004999

申请日：1999-01-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RYU CHIKYO

IPC: G02B5/20 ,  H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

Abstract: PROBLEM TO BE SOLVED: To provide a diode color sensor structure, capable of preventing a monochromatic light from deteriorating in color quality due to scattering effects generated by a color filter, when an incident light is filtered through a color filter. SOLUTION: A diode color sensor has a structure in which a color sensor layer 22 which comprises color sensor regions that absorb and detect different color light is formed on a board 20, and then black matrix films 24 coated with a transparent flattening film 26 are formed on the color sensor layer 22 through a dispersion pigment method and each positioned on interfaces between the color sensor regions 22a, 22b, and 22c. With this setup, interfering effects occurs less between chromatic color lights. Then, a color filter 28 which comprises a red filter R2 , a green filter G2 , and a blue filter B2 is formed on the transparent flattening film, and finally a protective cover film 30 is formed on the color filter 28.

公开(公告)号：JPH11305454A

公开(公告)日：1999-11-05

申请号：JP16954498

申请日：1998-06-17

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN KENKO ,  CHANG YI-CHUN

IPC: G03F7/32 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To prevent production of sulfur residue on a wafer and to easily remove a photoresist residue by cleaning a wafer with deposition of a residual matter on its surface metal layer by using a developer. SOLUTION: After a photoresist layer on a wafer with deposition of the photoresist on its metal layer is removed (31), the wafer is cleaned with a deionized water (32). The wafer is rotated at a high spinning rate to form a deionized water film on the wafer (33). By decreasing the spinning rate, the deionized water film is uniformly distributed on the wafer due to the surface tension of the water. Then a developer is introduced into the deionized water film, and the concn. of the developer is decreased by the deionized water film (34). Thereby the alkalinity of the developer is decreased, which suppresses possibility to form a recess on the wafer surface. The spinning rate is increased to uniformly mix the developer and the deionized water film, and then spinning speed is decreased to remove the residual matter on the metal layer (35). Then the soln. on the wafer is cleaned with water (36).

公开(公告)号：JPH11176923A

公开(公告)日：1999-07-02

申请号：JP10136698

申请日：1998-04-13

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN SHINRAI ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L21/76

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a trench isolation part. SOLUTION: A first insulating layer 21 is formed on a semiconductor substrate 20 through a chemical deposition means, and a photoresist layer is formed thereon. The photoresist layer is exposed, developed, and patterned by etching into a trench demarcating mask. Then, a first insulating part 21, a pad oxide layer, and a part of the semiconductor substrate 20 are etched continuously to provide trenches 22a and 22b to the semiconductor substrate 20. The trenches 22a and 22b are set different from each other in width so as to satisfy different needs of semiconductor devices. The trench 22b is wider in width than the trench 22a. The trench demarcating mask is removed. This trench isolation eliminates plate-like recess effect on the substrate, and a semiconductor device is improved in reliability.

公开(公告)号：JPH1174503A

公开(公告)日：1999-03-16

申请号：JP22514897

申请日：1997-08-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO INJO

IPC: H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To manufacture a small-sized MOS field effect transistor having a narrow gate electrode. SOLUTION: A first doped polysilicon layer 34 is formed on an active device area of a substrate 30 to manufacture a field effect transistor with a narrow gate. An opening is formed on the first polysilicon layer 34 to expose the surface of the substrate. A doped oxide layer is deposited on the first polysilicon layer 34 and in the opening of the first polysilicon layer 34. Oxide spacers 42 are formed on the side walls of the opening by etching. Impurities are diffused from the first polysilicon layer 34 and the doped oxide into the substrate 30 by annealing to form a source/drain areas 48 and 50. A gate oxide layer is formed on the substrate in the opening. A second polysilicon layer 56 is deposited on the device, on the surface of the insulating spacer structures 42 in the opening of the mask and on the gate oxide layer 52 in the bottom of the opening. The second polysilicon layer 56 is patterned to form a gate electrode extending between the spacers in the opening of the first polysilicon layer 34. The effective length of the gate electrode formed in this way is smaller than the length designed by a conventional method.

公开(公告)号：JPH10209301A

公开(公告)日：1998-08-07

申请号：JP20781597

申请日：1997-08-01

Applicant: UNITED MICROELECTRONICS CORP

Inventor： ON EIMO

IPC: H01L21/8246 ,  H01L27/112

Abstract: PROBLEM TO BE SOLVED: To improve the gap fill-up property and surface flatness of a wafer, by providing a grid-like structure having first parts functioning as bit lines of an ROM device and second parts functioning as channel region associated with the bit lines. SOLUTION: A photo resist layer is applied to the entire top surface of a wafer and selectively removed to expose first parts 49a, 49b of a grid-like structure other parts of which cover second parts 50a, 50f of the grid-like structure and fourth insulation layer 48. An ion implanting step is applied to diffuse a first type impurity material in the exposed parts of the grid-like structure, functioning as bit lines of an ROM device, resulting in change to more conductive n diffused regions, and a photo resist layer is removed to attain a superior planarized wafer surface, thereby providing a good gap fill-up property to trenches of the wafer top surface and reducing holes.

公开(公告)号：JPH1092955A

公开(公告)日：1998-04-10

申请号：JP25084396

申请日：1996-09-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHI UEI SAN

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8244 ,  H01L27/10 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To improve the resistance against soft errors caused by α particles by coupling one or both storage nodes of a static random access memory cell with corresponding electrodes to increase the node capacity. SOLUTION: A passage 12 is arranged by piercing an insulation layer 10 formed above a static random access memory(SRAM) on a substrate. Interconnection 14 is formed to contact a conductor through the passage 12. The conductor forms one storage node of the SRAM cell. The interconnection 14 is formed at once by depositing a polycrystal Si layer 16, and HSG-Si layer 18 is formed thereon. These layers 16, 18 are covered with a thin dielectric layer 20, an upper capacitor electrode 22 coupled with one of storage nodes is deposited on the dielectric layer 20. Thus the resistance against soft errors can be improved.

公开(公告)号：JPH1079487A

公开(公告)日：1998-03-24

申请号：JP794997

申请日：1997-01-20

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHAO FANG-CHING

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To widen a charge storage area by widening the surface of a branch conductive layer connected to an almost vertical trunk conductive layer, connected to a drain region of a transfer transistor and by forming an overlay conductive layer on a dielectric layer formed on an exposed face of both of the conductive layers. SOLUTION: Trunk-polysilicon layers 26a, 26b are electrically connected to drain regions 16a, 16b of a transfer transistor in a DRAM, respectively. The intermediate part of each of upper branch polysilicon layers 34a, 34b is connected to the upper end of each of the trunk-polysilicon layers 26a, 26b and is arranged at almost a right angle to the polysilicon layer. Branch polysilicon layers 30a, 30b extend downward from the under faces of the upper branch polysilicon layers 34a, 34b and then extend horizontally. Dielectric films 36a, 36b are formed on the tree-type storage electrodes 26a, 30a, 34a and 26b, 30b, 34b, and a polysilicon counter electrode 38 is formed on the dielectric films 36a, 36b.