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    Method of fabricating micro-electromechanical switches on CMOS compatible substrates
    172.
    发明授权
    Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
    在CMOS兼容基板上制造微机电开关的方法

    公开(公告)号：US06635506B2

    公开(公告)日：2003-10-21

    申请号：US10014660

    申请日：2001-11-07

    Applicant: Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC: H01L2100

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component
    174.
    发明申请
    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component 审中-公开
    可变电容器或微型开关类型的电子微组件，以及用于制造这种部件的工艺

    公开(公告)号：US20020132387A1

    公开(公告)日：2002-09-19

    申请号：US10151744

    申请日：2002-05-20

    Applicant: Memscap

    Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  Francois Valentin ,  Laurent Basteres

    IPC: H01L021/00

    CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板; 在固定板（1）的周边的至少一部分和每一侧上沉积金属带（10,11），所述带旨在用作固定板（1）和可变形膜（20）之间的间隔件 ）; 在所述固定板（1）的至少所述区域上沉积牺牲树脂层（15）; 通过光刻产生在所述牺牲树脂层的表面中的多个孔; 通过电解在形成在牺牲树脂（15）中的阱内沉积旨在形成可变形膜（20）的至少一个金属区域，该金属区域在位于金属带（10,11）的部分之间延伸 在所述固定板（1）的每一侧上; 去除牺牲树脂层（15）。

    Process of fabricating electronic microcomponent of the variable capacitor or microswitch type
    175.
    发明授权
    Process of fabricating electronic microcomponent of the variable capacitor or microswitch type 失效
    制造可变电容器或微动开关类型的电子微元件的工艺

    公开(公告)号：US06444488B2

    公开(公告)日：2002-09-03

    申请号：US09858092

    申请日：2001-05-15

    Applicant: Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  François Valentin ,  Laurent Basteres

    Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  François Valentin ,  Laurent Basteres

    IPC: H01L2100

    CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板;在所述固定板（1）的周边的至少一部分和所述固定板（1）的每一侧上沉积金属带（10,11），所述带是 旨在用作固定板（1）和可变形膜（20）之间的间隔件;在至少所述固定板（1）的区域上沉积牺牲树脂层（15）;通过光刻产生多个 在所述牺牲树脂层的表面中的孔;通过电解在形成在牺牲树脂（15）中的阱内部，至少一个旨在形成可变形膜（20）的金属区域沉积，该金属区域在 金属带（10,11） 位于所述固定板（1）的每一侧上;去除所述牺牲树脂层（15）。

    Microelectronic mechanical systems (MEMS) switch and method of fabrication
    176.
    发明申请
    Microelectronic mechanical systems (MEMS) switch and method of fabrication 失效
    微电子机械系统（MEMS）开关和制造方法

    公开(公告)号：US20020075094A1

    公开(公告)日：2002-06-20

    申请号：US09993095

    申请日：2001-11-06

    Applicant: Sarnoff Corporation

    Inventor： Daniel Bechtle ,  Gordon C. Taylor ,  Ayre Rosen

    IPC: H01P001/10

    CPC classification number: B81B3/0008 ,  B81B2201/018 ,  G11C23/00 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/127 ,  H01P9/00

    Abstract: A microelectronic mechanical systems (MEMS) switch includes a vane formed over a substrate for electrically coupling an input line to an output line formed on the substrate. The vane includes flexible hinges, which support the vane from the input line and allow the vane to rotate about a pivot axis. The substrate includes pull-down and pull-back electrodes to actuate the MEMS switch. The pull-back electrode allows the present invention to overcome stiction effects.

    Abstract translation: 微电子机械系统（MEMS）开关包括形成在衬底上的叶片，用于将输入线电耦合到形成在衬底上的输出线。 叶片包括柔性铰链，其从输入线支撑叶片并允许叶片围绕枢转轴线旋转。 衬底包括用于致动MEMS开关的下拉和拉回电极。 背面电极允许本发明克服静电效应。

    Distributed MEMS Switch Array Design with Multiple Input/Output Ports
    179.
    发明公开
    Distributed MEMS Switch Array Design with Multiple Input/Output Ports 审中-公开

    公开(公告)号：US20230202831A1

    公开(公告)日：2023-06-29

    申请号：US17806130

    申请日：2022-06-09

    Applicant: Menlo Microsystems, Inc.

    Inventor： Xu Zhu ,  Hajime Terazawa ,  Chris Nassar

    IPC: B81B3/00

    CPC classification number: B81B3/0018 ,  B81B2201/018 ,  B81B2207/053

    Abstract: A micro-relay switch array may comprise an array of micro-relays disposed on a substrate, and a cap disposed over the array of micro-relays, thereby encapsulating the array of micro-relays. The micro-relay switch array may further comprise an array of through-substrate vias (TSVs) associated with the array of micro-relays, arranged such that columns of TSVs alternate with columns of micro-relays, and a plurality of device electrical conductors, each of which electrically couples one of the TSVs of the array of TSVs directly to at least two of the micro-relays. The micro-relay switch array may further comprise a plurality of TSV electrical conductors, each of which electrically couples at least two TSVs together. Each micro-relay of the array of micro-relays may be a micro-electromechanical system (MEMS) switch. The substrate and cap may be glass, and the TSVs may be through-glass vias.

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