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    Method of manufacturing resonant transducer
    171.
    发明公开
    Method of manufacturing resonant transducer 有权
    赫尔斯特朗·赫斯特伦

    公开(公告)号：EP2599747A2

    公开(公告)日：2013-06-05

    申请号：EP12195311.1

    申请日：2012-12-03

    Applicant: Yokogawa Electric Corporation

    Inventor： Noda, Ryuichiro ,  Yoshida, Takashi

    IPC: B81C1/00

    CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    Abstract translation: 制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，其包括：第一硅层; 在所述第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 和（f）通过蚀刻去除氧化硅层的至少一部分，使得在第一硅层和由第一和第二间隙围绕的第二硅层的区域之间形成气隙。

    Resonator
    174.
    发明公开
    Resonator 审中-公开
    谐振器

    公开(公告)号：EP2339748A1

    公开(公告)日：2011-06-29

    申请号：EP09252287.9

    申请日：2009-09-28

    Applicant: NXP B.V.

    Inventor： Lander, Robert James Pascoe NXP Semiconductors

    IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H03H9/02448 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/2447 ,  Y10T29/49002

    Abstract: A resonator (2) having an effective spring constant (k z ) and comprising a beam (4) having a beam spring constant (k B ) adapted to resonate in an oscillation direction, and extending at a non-zero angle (θ) to the oscillation direction, wherein the resonator has a predetermined geometry and is formed from one or more materials, the or each material having a coefficient of thermal expansion (CTE), the CTE of the or each material together with the predetermined geometry of the resonator causing θ to vary with temperature, such that the temperature dependence of the beam spring constant is compensated for, resulting in the effective spring constant of the resonator remaining substantially constant within an operating temperature range.

    Abstract translation: 一种具有有效弹簧常数（kz）并且包括具有适于在振荡方向上共振并且以非零角度（¸）延伸到所述光束弹簧常数（k B）的光束弹簧常数（k B）的光束（4）的谐振器（2） 振荡方向，其中谐振器具有预定的几何形状并且由一种或多种材料形成，该材料或每种材料具有热膨胀系数（CTE），该材料的每个材料的CTE以及谐振器的预定几何形状引起¸ 随着温度而变化，使得光束弹簧常数的温度依赖性被补偿，导致共振器的有效弹簧常数在工作温度范围内基本保持不变。

    MEMS device with reduced parasitic capacitance
    177.
    发明公开
    MEMS device with reduced parasitic capacitance 审中-公开
    MEMS-Vorrichtung mit reduzierterparasitärerKapazität

    公开(公告)号：EP1916222A2

    公开(公告)日：2008-04-30

    申请号：EP07020581.0

    申请日：2007-10-22

    Applicant: Seiko Epson Corporation

    Inventor： Watanabe, Toru ,  Sato, Akira ,  Inaba, Shogo ,  Mori, Takeshi

    IPC: B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2201/0271

    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

    Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

    PIEZOELECTRIC FILTER
    179.
    发明公开
    PIEZOELECTRIC FILTER 有权
    PIEZOELEKTRISCHES过滤器

    公开(公告)号：EP1804376A1

    公开(公告)日：2007-07-04

    申请号：EP05755248.1

    申请日：2005-07-01

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： KUBO, Ryuichi, Murata Manufacturing Co., Ltd. ,  OGUCHI, Takahiro, Murata Manufacturing Co., Ltd. ,  YAMADA, Hajime, Murata Manufacturing Co., Ltd.

    IPC: H03H9/02 ,  H03H9/17 ,  H03H9/25 ,  H03H9/58 ,  H03H9/64

    CPC classification number: H03H9/587 ,  B81B2201/0271 ,  B81C1/00238 ,  H03H9/105 ,  H03H9/1092 ,  H03H9/564

    Abstract: A piezoelectric filter having a smaller size is provided.
    A piezoelectric filter (10) includes a first substrate (22) having at least one first piezoelectric resonator (25) disposed on a main surface of the first substrate (22); a second substrate (12) having at least one second piezoelectric resonator (15) disposed on a main surface of the second substrate (12); a connection pattern (20) extending around the first piezoelectric resonator (25) and the second piezoelectric resonator (15) and disposed between the first substrate (22) and the second substrate (12), the main surface of the first substrate (22) facing the main surface of the second substrate (12), the first piezoelectric resonator (25) being bonded to the second piezoelectric resonator (15) with the connection pattern (20), and the first piezoelectric resonator (25) being remote from the second piezoelectric resonator (15), and a connecting layer (24x) for bonding a pad (28x) to a pad (18x), the pad 2(8x) being disposed on the main surface of the first substrate (22) and electrically connected to the first piezoelectric resonator (25), and the pad (18x) being disposed on the main surface of the second substrate (12) and electrically connected to the second piezoelectric resonator (15).

    Abstract translation: 提供具有较小尺寸的压电滤波器。 压电滤波器（10）包括：第一基板（22），其具有设置在第一基板（22）的主表面上的至少一个第一压电谐振器（25）; 具有设置在所述第二基板（12）的主表面上的至少一个第二压电谐振器（15）的第二基板（12）。 连接图案（20），其围绕第一压电谐振器（25）和第二压电谐振器（15）延伸并且设置在第一基板（22）和第二基板（12）之间，第一基板（22）的主表面， 面对第二基板（12）的主表面，第一压电谐振器（25）通过连接图案（20）接合到第二压电谐振器（15），并且第一压电谐振器（25）远离第二压电谐振器 压电谐振器（15）和用于将焊盘（28x）连接到焊盘（18x）的连接层（24x），焊盘2（8x）设置在第一基板（22）的主表面上并电连接到 所述第一压电谐振器（25）和所述焊盘（18x）设置在所述第二基板（12）的主表面上并电连接到所述第二压电谐振器（15）。

    Vacuum packaged single crystal silicon resonator
    180.
    发明公开
    Vacuum packaged single crystal silicon resonator 审中-公开
    真空封装的单晶硅谐振器

    公开(公告)号：EP1803684A2

    公开(公告)日：2007-07-04

    申请号：EP06126812.4

    申请日：2006-12-21

    Applicant: Honeywell International Inc.

    Inventor： Jafri, Ijaz H. ,  Magendanz, Galen P.

    IPC: B81C5/00

    CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    Abstract translation: 一种形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，所述双晶片工艺包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚定件，电容性空气 间隙，隔离沟槽和对准标记在基础晶片的有源层中微机械加工; 谐振器晶片的有源层直接结合到基底晶片的有源层; 谐振器晶片的手柄和介电层被去除; 窗口在谐振器晶片的有源层中打开; 用光刻胶掩盖谐振器晶片的有源层; 使用硅干法蚀刻微机械加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖物被结合到谐振器晶片，导致密封芯片尺寸晶片级真空封装装置。

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