中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

368 records (took 0.026 seconds)

    Getter Formed By Laser-Treatment and Methods of Making Same
    171.
    发明申请
    Getter Formed By Laser-Treatment and Methods of Making Same 失效
    通过激光治疗形成的吸气剂及其制备方法

    公开(公告)号：US20090261464A1

    公开(公告)日：2009-10-22

    申请号：US12204296

    申请日：2008-09-04

    Applicant: Susan Alie

    Inventor： Susan Alie

    IPC: H01L21/322 ,  H01L23/02

    CPC classification number: H01L23/26 ,  B81C1/00285 ,  B81C2201/0143 ,  H01L2224/16 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof.

    Abstract translation: 本公开涉及用超快速激光处理硅衬底以产生例如在基本封闭的MEMS封装中的吸气材料的方法。 在一个实施例中，激光处理包括用多个激光脉冲对硅表面照射，以将吸收微结构加到被处理的表面上。 基于半导体的封装器件，例如 MEMS作为示例。

    Ion implanted microscale and nanoscale device method
    172.
    发明授权
    Ion implanted microscale and nanoscale device method 有权
    离子注入微米级和纳米级器件方法

    公开(公告)号：US07419917B2

    公开(公告)日：2008-09-02

    申请号：US11504466

    申请日：2006-08-15

    Applicant: Margaret H. Abraham

    Inventor： Margaret H. Abraham

    IPC: H01L21/31

    CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

    Abstract: A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

    Abstract translation: 一种方法用于生产各种材料中的纳米级和微量元件，例如二氧化硅图案化的掩膜。 该方法对于制造小规模机械，光学或电气装置而言是便宜且可靠的，并且依赖于将离子注入衬底并随后退火以形成化学计量膜，其中器件几何形状由注入能量和剂量限定，因此 不受通常工艺参数的限制。

    Pulsed ion beam control of solid state features
    173.
    发明授权
    Pulsed ion beam control of solid state features 有权
    脉冲离子束控制固态特征

    公开(公告)号：US07118657B2

    公开(公告)日：2006-10-10

    申请号：US10695381

    申请日：2003-10-28

    Applicant: Jene A. Golovchenko ,  Derek M. Stein ,  Jiali Li

    Inventor： Jene A. Golovchenko ,  Derek M. Stein ,  Jiali Li

    IPC: C32C14/34

    CPC classification number: B81C1/00626 ,  B01L3/5027 ,  B24B37/013 ,  B81C99/004 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

    Abstract translation: 为了控制固态结构特征的物理尺寸，提供具有表面并具有结构特征的固态结构。 该结构暴露于具有第一曝光占空比的第一周期性通量的离子，其特征在于第一占空比的第一离子曝光持续时间和第一非曝光持续时间，然后在具有第二曝光占空比的第二周期通量的离子 其特征在于，对于所述第二占空比，所述第二离子曝光持续时间和第二非曝光持续时间大于所述第一非曝光持续时间，以使所述结构的材料在所述结构的结构体内包括所述结构表面在所述结构特征中的响应 到离子通量暴露基本上通过将结构的材料局部添加到特征来改变特征的至少一个物理尺寸。

    Fabrication of three dimensional structures
    176.
    发明申请
    Fabrication of three dimensional structures 有权
    三维结构的制作

    公开(公告)号：US20040099636A1

    公开(公告)日：2004-05-27

    申请号：US10301208

    申请日：2002-11-21

    Inventor： Lawrence Scipioni

    IPC: C23F001/00

    CPC classification number: G21K1/087 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/31732

    Abstract: The present disclosure relates to a method for generating a three-dimensional microstructure in an object. In one embodiment, a method for fabricating a microscopic three-dimensional structure is provided. A work piece is provided that includes a target area at which the three-dimensional structure is to be fabricated. The target area has a plurality of virtual dwell points. A shaped beam is provided to project onto the work piece. The intersection of the shaped beam with the work piece defines a beam incidence region that has a desired shape. The beam incidence region is sufficiently large to encompass multiple ones of the virtual dwell points. The shaped beam is moved across the work piece such that different ones of the virtual dwell points come into it and leave it as the beam moves across the work piece thereby providing different doses to different ones of the virtual dwell points as the different dwell points remain in the beam incidence region for different lengths of time during the beam scan. In this way, a desired dose array of beam particles is applied onto the target area to form the three dimensional microstructure.

    Abstract translation: 本公开涉及一种用于在物体中产生三维微结构的方法。 在一个实施例中，提供了一种用于制造微观三维结构的方法。 提供了包括要制造三维结构的目标区域的工件。 目标区域具有多个虚拟驻留点。 提供成形梁以投影到工件上。 成形梁与工件的交点限定了具有所需形状的射束入射区域。 光束入射区域足够大以包含多个虚拟驻留点。 成形的梁移动穿过工件，使得不同的虚拟停留点进入并离开它，当梁移动穿过工件，从而当不同的停留点保持不同时向不同的虚拟停留点提供不同的剂量 在光束入射区域中在束扫描期间不同长度的时间。 以这种方式，将期望的束粒子的剂量阵列施加到目标区域上以形成三维微结构。

    Micro-protrusion arrays fabricated by e-beam exposure
    177.
    发明授权
    Micro-protrusion arrays fabricated by e-beam exposure 失效
    通过电子束曝光制造的微突起阵列

    公开(公告)号：US06627842B1

    公开(公告)日：2003-09-30

    申请号：US09374905

    申请日：1999-08-13

    Applicant: Stephen J. Fonash ,  A. Kaan Kalkan

    Inventor： Stephen J. Fonash ,  A. Kaan Kalkan

    IPC: B23K1500

    CPC classification number: B81C1/00111 ,  B81C1/00492 ,  B81C2201/0143

    Abstract: The method of the invention produces protruding features on a glass layer. Initially, a conductive layer is applied to the glass layer and is coupled to a source of reference potential. This conductive layer prevents a build-up of electrons in the glass layer when it is exposed to an electron beam. Thereafter, an electron beam is directed at combined layers in areas where protruding features are to be produced. The energy, current density and duration of application of the electron beam are controlled so as to create a melt/softened region within the glass layer. Such softening and differences in expansion rates between the softened glass and the surrounding glass causes a protruding feature to appear on the surface of the glass layer.

    Abstract translation: 本发明的方法在玻璃层上产生突出特征。 最初，将导电层施加到玻璃层并耦合到参考电位源。 当导电层暴露于电子束时，该导电层防止玻璃层中电子的积聚。 此后，在要产生突出特征的区域中电子束被引导到组合层。 控制电子束的能量，电流密度和持续时间以在玻璃层内产生熔融/软化区域。 软化玻璃和周围玻璃之间的这种软化和膨胀率的差异导致出现在玻璃层的表面上的突出特征。

Patent Agency Ranking