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    MEMS GYROSCOPE
    171.
    发明申请
    MEMS GYROSCOPE 审中-公开
    MEMS陀螺仪

    公开(公告)号：US20160154019A1

    公开(公告)日：2016-06-02

    申请号：US14518621

    申请日：2014-10-20

    Applicant: InSighTech, LLC

    Inventor： Biao Zhang ,  Tao Ju

    IPC: G01P15/105 ,  G01R33/09

    CPC classification number: G01P15/105 ,  B81B5/00 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/0197 ,  B81C2203/038 ,  G01C19/56 ,  G01C19/5712 ,  G01C19/5776 ,  G01P15/125 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098

    Abstract: A MEMS gyroscope is disclosed herein, wherein the MEMS gyroscope comprises a movable portion capable of moving in response to angular velocity, a conducting wire attached to the movable portion for generating magnetic field, and a spintronic device for measuring the magnetic field. The conducting wire is disposed such that the current it carries is substantially perpendicular to the sensing direction of the sensing mode of the proof-mass.

    Abstract translation: 本文公开了一种MEMS陀螺仪，其中MEMS陀螺仪包括能够响应于角速度移动的可移动部分，连接到用于产生磁场的可移动部分的导线和用于测量磁场的自旋电子装置。 导线被布置成使得其承载的电流基本上垂直于检验质量的感测模式的感测方向。

    CHIP PACKAGE AND METHOD THEREOF
    172.
    发明申请
    CHIP PACKAGE AND METHOD THEREOF 有权
    芯片包装及其方法

    公开(公告)号：US20160039662A1

    公开(公告)日：2016-02-11

    申请号：US14747507

    申请日：2015-06-23

    Applicant: XINTEC INC.

    Inventor： Chien-Min LIN ,  Yu-Ting HUANG ,  Chen-Ning FU ,  Yen-Shih HO

    IPC: B81B7/00 ,  H01L21/48 ,  H01L23/498 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81C1/00182 ,  B81C1/00269 ,  B81C2201/0197 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A chip package includes a semiconductor chip, an interposer, a polymer adhesive supporting layer, a redistribution layer and a packaging layer. The semiconductor chip has a sensor device and a conductive pad electrically connected to the sensing device, and the interposer is disposed on the semiconductor chip. The interposer has a trench and a through hole, which the trench exposes a portion of the sensing device, and the through hole exposes the conductive pad. The polymer adhesive supporting layer is interposed between the semiconductor chip and the interposer, and the redistribution layer is disposed on the interposer and in the through hole to be electrically connected to the conductive pad. The packaging layer covers the interposer and the redistribution layer, which the packaging layer has an opening exposing the trench.

    Abstract translation: 芯片封装包括半导体芯片，插入件，聚合物粘合剂支撑层，再分布层和包装层。 半导体芯片具有传感器装置和与感测装置电连接的导电焊盘，并且插入器设置在半导体芯片上。 插入器具有沟槽和通孔，沟槽暴露感测装置的一部分，并且通孔暴露导电垫。 聚合物粘合剂支撑层插入在半导体芯片和插入件之间，并且再分配层设置在插入件上和通孔中以与导电焊盘电连接。 包装层覆盖插入件和再分配层，其中封装层具有露出沟槽的开口。

    Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
    173.
    发明授权
    Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures 有权
    在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置

    公开(公告)号：US08702956B2

    公开(公告)日：2014-04-22

    申请号：US13356398

    申请日：2012-01-23

    Applicant: Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    Inventor： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    IPC: C25D5/52 ,  C25D5/10 ,  C25D5/02

    CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    Abstract translation: 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

    Method of electrochemical fabrication
    178.
    发明授权
    Method of electrochemical fabrication 有权
    电化学加工方法

    公开(公告)号：US07981269B2

    公开(公告)日：2011-07-19

    申请号：US11927369

    申请日：2007-10-29

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C25D5/02

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    General strength and sensitivity enhancement method for micromachined device
    179.
    发明申请
    General strength and sensitivity enhancement method for micromachined device 审中-公开
    微加工装置的一般强度和灵敏度增强方法

    公开(公告)号：US20110115035A1

    公开(公告)日：2011-05-19

    申请号：US12807658

    申请日：2010-09-13

    Applicant: Jung-Tang Huang ,  Ming-Jhe Lin ,  Hou-Jun Hsu

    Inventor： Jung-Tang Huang ,  Ming-Jhe Lin ,  Hou-Jun Hsu

    IPC: H01L23/14 ,  H01L21/445

    CPC classification number: B81B3/0086 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2207/015 ,  B81C2201/0167 ,  B81C2201/0197 ,  B81C2203/0714

    Abstract: This invention disclosed a method to strengthen structure and enhance sensitivity for CMOS-MEMS micro-machined devices which include micro-motion sensor, micro-actuator and RF switch. The steps of the said method contain defining deposited region by metal and passivation layer, forming a cavity for depositing metal structure by lithography process, depositing metal structure on the top metal layer of micromachined structure by Electroless plating, polishing process and etching process. The method aims at strengthening structures and minimizing CMOS-MEMS device size. Furthermore, this method can also be applied to inertia sensors such as accelerometer or gyroscope, which can enhance sensitivity and capacitive value, and deal with curl issues for suspended CMOS-MEMS devices.

    Abstract translation: 本发明公开了一种加强结构并增强CMOS-MEMS微加工器件的灵敏度的方法，包括微运动传感器，微执行器和RF开关。 所述方法的步骤包括通过金属和钝化层定义沉积区域，通过光刻工艺形成用于沉积金属结构的空腔，通过无电镀，抛光工艺和蚀刻工艺在金属微结构的顶部金属层上沉积金属结构。 该方法旨在加强结构并使CMOS-MEMS器件尺寸最小化。 此外，该方法还可以应用于诸如加速度计或陀螺仪的惯性传感器，其可以增强灵敏度和电容值，并且处理悬挂的CMOS-MEMS器件的卷曲问题。

    Methods of and Apparatus for Molding Structures Using Sacrificial Metal Patterns
    180.
    发明申请
    Methods of and Apparatus for Molding Structures Using Sacrificial Metal Patterns 审中-公开
    使用牺牲金属图案模制结构的方法和设备

    公开(公告)号：US20100213068A1

    公开(公告)日：2010-08-26

    申请号：US12706566

    申请日：2010-02-16

    Applicant: Christopher A. Bang

    Inventor： Christopher A. Bang

    IPC: C25D1/00

    CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

    Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

    Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

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