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    Method of making optical fiber with reduced E-band and L-band loss peaks
    172.
    发明申请
    Method of making optical fiber with reduced E-band and L-band loss peaks 有权
    具有降低的E波段和L波段损耗峰值的光纤的制造方法

    公开(公告)号：US20040042746A1

    公开(公告)日：2004-03-04

    申请号：US10247100

    申请日：2002-09-19

    Inventor： Robert M. Atkins ,  Alice W. Liu ,  Poul Kristensen ,  Morten Ostergaard Pedersen ,  Stig Nissen Knudsen ,  Jan Levin Nielsen ,  Jake Bromage ,  Kai H. Chang

    IPC: G02B006/02

    CPC classification number: C03C13/045 ,  C03B37/014 ,  C03B2201/03 ,  C03B2201/07 ,  G02B6/02

    Abstract: Applicants have discovered the existence of loss peaks in optical fiber transmission systems using wavelengths in the E-band and the L-band. Specifically, they have discovered the existence of narrow loss peaks at 1440 nm, 1583 nm and 1614 nm. Because the peaks are relatively narrow, they cannot be easily removed by conventional gain equalizers in long haul transmission systems, and although the peaks are relatively small, they can nonetheless cause transmission channels to drop out in amplified DWDM transmission systems. Applicants have further discovered that these loss peaks are due to carbon contamination of the transmission fiber. Thus optical fibers should be fabricated essentially free of carbon contamination. This means eliminating carbon-containing reagents in preform and tube-making processes.

    Abstract translation: 申请人已经发现在使用E波段和L波段的光纤传输系统中存在损耗峰值。 具体来说，他们已经发现在1440nm，1583nm和1614nm处存在窄的损耗峰。 由于峰值相对较窄，它们不能通过长距离传输系统中的常规增益均衡器容易地去除，尽管峰值相对较小，但是它们仍可能使传输信道在放大的DWDM传输系统中丢失。 申请人进一步发现，这些损失峰值是由于传输纤维的碳污染。 因此，光纤应该基本上没有碳污染。 这意味着在预成型件和制管工艺中消除含碳试剂。

    Method for heat treating synthetic quartz glass for optical use, heat treatment apparatus for the same, and synthetic quartz glass for optical use
    173.
    发明申请
    Method for heat treating synthetic quartz glass for optical use, heat treatment apparatus for the same, and synthetic quartz glass for optical use 有权
    用于光学用的合成石英玻璃的热处理方法，用于其的热处理装置和用于光学用途的合成石英玻璃

    公开(公告)号：US20030131631A1

    公开(公告)日：2003-07-17

    申请号：US10297451

    申请日：2002-12-06

    Inventor： Tetsuji Ueda ,  Hiroyuki Nishimura ,  Akira Fujinoki

    IPC: C03B032/00

    CPC classification number: C03C23/007 ,  C03B19/1453 ,  C03B32/00 ,  C03B2201/03 ,  Y10S65/90

    Abstract: An object of the present invention is to overcome the problems of the prior art technique, and to provide a heat treatment method as well as a heat treatment apparatus capable of heat treating, with higher efficiency, a synthetic quartz glass for optical use having higher homogeneity and higher purity. Another object of the present invention is to provide and a synthetic quartz glass for optical use. The problems above are solved by, in a method for heat treating a flat cylindrical synthetic quartz glass body provided as the object to be heat treated in a heating furnace, a method for heat treating a synthetic quartz glass for optical use comprising preparing a vessel made of quartz glass and having a flat cylindrical space for setting therein the object synthetic quartz glass body, placing two or more object synthetic quartz glass bodies into the vessel in parallel with each other, filling the space with SiO2 powder, setting the vessel inside the heating furnace with its lid closed, and applying the heat treatment to the vessel.

    Abstract translation: 本发明的目的是克服现有技术的问题，提供热处理方法以及能够以更高的效率对具有较高均匀性的光学用合成石英玻璃进行热处理的热处理装置 和更高的纯度。 本发明的另一个目的是提供一种用于光学用途的合成石英玻璃。 上述问题是通过在加热炉中对作为热处理对象的平坦圆筒形合成石英玻璃体进行热处理的方法来解决的，该方法是用于热处理用于光学用途的合成石英玻璃的方法，包括制备容器 的石英玻璃，并且具有平坦的圆柱形空间用于在其中设置物体合成石英玻璃体，将两个或更多个目标合成石英玻璃体彼此平行放置在容器中，用SiO 2粉末填充空间，将容器设置在加热 炉盖关闭，并对容器进行热处理。

    Method for producing a quartz glass crucible
    177.
    发明授权
    Method for producing a quartz glass crucible 失效
    石英玻璃坩埚的制造方法

    公开(公告)号：US5762672A

    公开(公告)日：1998-06-09

    申请号：US500541

    申请日：1995-07-11

    Applicant: Tooru Ikeda ,  Kazuo Asajima ,  Hiroshi Kimura ,  Hiroyuki Watanabe

    Inventor： Tooru Ikeda ,  Kazuo Asajima ,  Hiroshi Kimura ,  Hiroyuki Watanabe

    IPC: C03B19/09 ,  C03B20/00 ,  C30B15/10 ,  C30B35/00 ,  C03B19/04

    CPC classification number: C30B35/002 ,  C03B19/095 ,  C30B15/10 ,  C03B2201/03 ,  Y02P40/57 ,  Y10S65/08

    Abstract: In a quartz glass crucible obtained by heating and fusing a rotating layer (3) charged with a powder of silicon dioxide, impurity elements are controlled so that copper, chromium, and nickel each amount to 0.5 ppb or less, iron amounts to 120 ppb or less, and sodium amounts to 20 ppb or less. The silicon dioxide powder is supplied to a rotatable mold (1) having an open top, thereby forming a layer (3) charged with silicon dioxide along the inner peripheral wall of the mold. The layer (3) is internally heated and fused while covering the open top with a lid (5) having two or more holes (6,7), and the mold (1) is ventilated to discharge the high temperature gases through the holes (6,7).

    Abstract translation: 在通过加热和熔化装有二氧化硅粉末的旋转层（3）而获得的石英玻璃坩埚中，控制杂质元素，使得铜，铬和镍各自为0.5ppb以下，铁量为120ppb或 较少，钠量为20ppb以下。 将二氧化硅粉末供给到具有开口顶部的可旋转模具（1），从而沿着模具的内周壁形成装有二氧化硅的层（3）。 层（3）被内部加热并熔化，同时用具有两个或多个孔（6,7）的盖（5）覆盖开口顶部，并且模具（1）通风以将高温气体排出孔（ 6,7）。

    Heat treatment apparatus
    178.
    发明授权
    Heat treatment apparatus 失效
    热处理设备

    公开(公告)号：US5749723A

    公开(公告)日：1998-05-12

    申请号：US489937

    申请日：1995-06-13

    Applicant: Wataru Okase

    Inventor： Wataru Okase

    IPC: C03C27/06 ,  C30B31/10 ,  H01L21/22 ,  H01L21/31 ,  F27D3/12

    CPC classification number: C30B31/10 ,  C03B19/1415 ,  C03B2201/03 ,  Y02P40/57

    Abstract: A vertical heat treatment apparatus that includes a reaction tube for wafers to be loaded into from below and a heating unit surrounding the reaction vessel, or a single wafer heat treatment apparatus having a holder which provides a mount for wafers being loaded one by one into a reaction tube for heat treatment. The reaction tube has a structure of, e.g., two layers with a first layer of synthetic quartz glass made from a silicon compound, such as silicon tetrachloride, as a raw material. The first layer represents a surface that comes in contact with a heat treatment atmosphere. The second layer is of molten quartz glass made from quartz as a raw material and is external to the first layer. Synthetic quartz glass contains such traces of metals that scattered amounts of metals released into a heat treatment atmosphere due to exposure of the reaction tube to high temperatures is substantially zero. Furthermore, synthetic quartz glass and molten quartz glass are laid on each other, which improves heat resistance of the reaction tube. Thus, in conducting oxidation, diffusion, and other heat treatments on objects to be treated, e.g., semiconductor wafers, contamination of the objects with impurities can be minimized.

    Abstract translation: 一种立式热处理装置，其特征在于，包括用于从下方装载的晶片的反应管和围绕所述反应容器的加热单元的单晶片热处理装置，或者具有保持器的单晶片热处理装置，所述保持器将用于晶片的安装件一个接一个地装载到 反应管用于热处理。 反应管具有例如两层的结构，其具有由诸如四氯化硅的硅化合物制成的第一层合成石英玻璃作为原料。 第一层表示与热处理气氛接触的表面。 第二层是由石英作为原料制成的熔融石英玻璃，在第一层的外部。 合成石英玻璃含有这样的痕量的金属，使得由于反应管暴露于高温而释放到热处理气氛中的金属的散射量基本为零。 此外，合成石英玻璃和熔融石英玻璃彼此铺设，这提高了反应管的耐热性。 因此，在对待处理的物体（例如半导体晶片）进行氧化，扩散和其它热处理时，可以最小化物体与杂质的污染。

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