Abstract:
The present invention relates to a method for displaying a virtual keypad and an electronic device thereof. The method for displaying the virtual keypad of the electronic device includes detecting execution of an application allowing text input, detecting at least one touch subject within a threshold distance of a touchscreen, and displaying a virtual keypad when the touch subject within the threshold distance of the touchscreen is detected. The virtual keyboard can be displayed by the electronic device according to a user′s character input intention, and a plurality of processes preceded to display the virtual keyboard can be simplified.
Abstract:
The present invention relates to a method for operating a camera and an electronic device therefor. The method for operating a camera of an electronic device comprises the steps of: operating a first camera and a second camera; determining whether the second camera is screened; and displaying an image obtained by the first camera on a preview screen when the second camera is in a screened state. Even if a user does not perform a process of controlling a complicated menu provided from a camera application, the electronic device can operate the camera corresponding to photographing intention of a user.
Abstract:
A display device is disclosed. The display device comprises a display panel, a touch sensing sensor for sensing whether a display screen of an external display device is touched, and a control unit for transmitting first data transmitted to the external display device to the external display device through a touch area touched by the external display device within the display panel and for obtaining second data transmitted by the external display device by using the touch sensing sensor.
Abstract:
An LED illumination apparatus is disclosed. Multiple corresponding holes are formed on the disclosed LED illumination apparatus and the disclosed LED illumination apparatus comprises; a housing which comprises an upper plate and a lower plate which is separated from the upper plate at predetermined intervals in parallel; a printed circuit board which is mounted within the housing and has multiple holes; multiple light emitting devices which are arranged while facing with the lower plate in the printed circuit board; a reflector which is arranged while facing with the light emitting device on the lower plate and emits light from the light emitting device to outside through the holes formed on the printed circuit board and the upper plate.
Abstract:
PURPOSE: A reference signal allocation method at the multicell environment, a management method, a network device applied with method thereof, and a terminal are provided to efficiently assign the reference signal pattern to a plurality of femto cells through the long-term coordination of the central control unit. CONSTITUTION: A central control unit receives the femto cell information from a network device located one or more femto cells which are adjacent to one or more neighbor cell respectively(504). The central control unit receives the reference signal reuse pattern information request signal from the network device of the femto cell(506). The central control unit transmits the reference signal reuse pattern information allocated according to the selected standards to the network device(508). The reference signal reuse pattern information is allocated with the selected standards for the adjacent cell and the femto cell located in the multicell environment to the time-sharing method.
Abstract:
A method for manufacturing a non-volatile memory device is provided to decrease an electrical equivalent thickness without decreasing a physical thickness of an interlayer dielectric. A tunnel oxide film(110) and a polysilicon layer(120) are sequentially formed on a semiconductor substrate(100). The polysilicon layer is nitrided, such that a surface of the polysilicon is converted into a first nitride film. A radical oxidation is performed on the first nitride film by using oxygen radicals, such that the first nitride film is converted into an oxide nitride film(140). A low pressure CVD is performed on the oxide nitride film, such that a lower oxide film(150) is formed. A second nitride film(160) and an upper oxide film(170) are sequentially formed on the lower oxide film. A conductive layer(210) is formed on the upper oxide film.