公开(公告)号：EP0718863A3

公开(公告)日：1998-03-04

申请号：EP95119876.1

申请日：1995-12-15

Applicant: HITACHI, LTD.

Inventor： Ohshima, Takashi ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC: H01J1/30 ,  H01J9/02 ,  H01J37/073

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

Abstract: An electron beam source is provided with an electron forming means (12,2,3) such as a doped layer of Si (2) for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer (4) and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided.

公开(公告)号：EP0776493A2

公开(公告)日：1997-06-04

申请号：EP95930135.0

申请日：1995-08-09

Applicant: FED CORPORATION

Inventor： JONES, Gary, W.

IPC: G02B27 ,  G09G3 ,  H01J3 ,  H01J9 ,  H01J29 ,  H01J31 ,  H04N5 ,  H04N13

CPC classification number: G09G3/025 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/194 ,  H04N13/286 ,  H04N13/324 ,  H04N13/341 ,  H04N13/344 ,  H04N13/361 ,  H04N13/363 ,  H04N13/365 ,  H04N13/398

Abstract: An imaging apparatus (100) for providing an image from a display (106) to an observer (101), comprising: a display (106) generating an optical output, an imaging surface member (109) constructed and arranged for viewing by said observer, and a scanning mirror/lens assembly (102) optically interposed between the display and the imaging surface member, and constructed and arranged to motively repetitively scan the display, generate a scanned image, and transmit the scanned image to the imaging surface member, for viewing of the scanned image. Various field emitter display designs and subassemblies are described, which may be usefully employed in such imaging apparatus.

公开(公告)号：EP0732720A1

公开(公告)日：1996-09-18

申请号：EP96103200.0

申请日：1996-03-01

Applicant: HITACHI, LTD.

Inventor： Nishiyama, Hidetoshi ,  Okamoto, Masakuni ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC: H01J1/14 ,  H01J9/02

CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2201/317 ,  H01J2237/06316

Abstract: Disclosed is a cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point. The effect of reducing the work function results in a cathode having a narrow FWHM (full width at half maximum) of emission electrons and a high current density. Moreover, the cathode of the present invention is easy to manufacture and handle.

Abstract translation: 公开的是具有给电子钨单晶发射极具有锋利的尖端的阴极（E. G.，肖特基发射阴极），以及连接到所述电子发射器将其加热的加热器。 电子发射器的点的晶面的功函数通过在其上锆，钛，Y，Nb的，SC，V或La，的氮化物或Y，钪，V或La的氧化物的吸附提供降低。 的氮化物或氧化物可以形成为在所述加热器（从那里热扩散到的点），或化学吸附上的点的贮存器。 用于形成上的点的氮化物或氧化物，可以被提供在该点的金属形成氮化物或氧化物，与氮或氧在该处，以形成氮化物或氧反应; 对点提供金属，该金属在形成氮化物或氧化物可以蒸发要么走上点，或者可以形成到该点上的加热器和热扩散从那里的贮存器。 减少在具有发射电子的窄FWHM（半峰全宽）和高电流密度的阴极功函数的结果的影响。 更过来，本发明的阴极是易于制造和处理。

公开(公告)号：EP0718863A2

公开(公告)日：1996-06-26

申请号：EP95119876.1

申请日：1995-12-15

Applicant: HITACHI, LTD.

Inventor： Ohshima, Takashi ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC: H01J1/30 ,  H01J9/02 ,  H01J37/073

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

Abstract: An electron beam source is provided with an electron forming means (12,2,3) such as a doped layer of Si (2) for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer (4) and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided.

Abstract translation: 例如Si的（2）的针形结构的尖端的表面附近形成传导带的电子，同时抑制的发射的掺杂层：电子束源在电子成形装置（12,2,3）设置有 从价电子并列。 针状结构的尖端的表面上形成有单晶半导体或绝缘体。 优选地，表面钝化层（4）和/或高掺杂层形成在所述针状体的表面上。 因此，用于以价带，可以提供令人兴奋的电子。

公开(公告)号：KR1020000068641A

公开(公告)日：2000-11-25

申请号：KR1019997002617

申请日：1998-06-26

Applicant: 모토로라 솔루션즈, 인크.

Inventor： 카라말라바부 ,  팩성피. ,  로웰챨스에이.

IPC: H01J1/30

CPC classification number: H01J1/3042 ,  H01J29/04 ,  H01J2201/30426

Abstract: 전자이미터(121, 221, 321, 421)는그 위에형성된패시베이션층(120, 220, 320, 420)을갖는전자이미터구조체(118)을포함한다. 패시베이션층(120, 220, 320, 420)은 Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th 및그 조합으로이루어진군으로부터선택된산화물로제조된다. 양호한실시예에서, 전자이미터구조체(118)는몰리브덴으로제조되고, 패시베이션층(120, 220, 320, 420)은몰리브덴의일함수보다적은일함수를갖는방출-증진산화물로제조된다.

公开(公告)号：KR100249416B1

公开(公告)日：2000-03-15

申请号：KR1019970011146

申请日：1997-03-28

Applicant: 닛본 덴끼 가부시끼가이샤

Inventor： 마끼시마히데오

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J1/304 ,  H01J63/02 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: 본 발명에 따라, 기판(1)과; 상기 기판(1) 상에 형성된 다수 개의 전자 방출 전극(7)과; 전자 방출 전극(7)이 배치된 다수 개의 제 1 캐비티(2a)를 가지며 상기 기판(1) 상에 형성된 제1 절연층(2)과; 제 1 캐비티(2a)와 연통하는 제 1 개구(3a)를 다수 개 가지며 상기 제 1 절연층(2) 상에 형성된 게이트 전극(3)과; 상기 제 1 개구(3a)와 연통하는 제 2 캐비티(4a)를 다수 개 가지며 게이트 전극(3) 상에 형성된 제 2 절연층(4); 및 제 2 캐비티(4a)와 연통하는 제 2 개구(5a)를 다수 개 가지며 상기 제 2 절연층(4) 상에 형성된 집속 전극(5)을 포함하는 냉음극 (9)으로서, 제 2 개구(5a)의 중심축과 제 1 개구(3a)의 중심축중 적어도 하나는 상기 전자 방출 전극(7)의 중심축과 편심(eccentric)인 것을 특징으로 한다. 상기 냉음극(9)은 전자 (10)가 방출되는 각도를 넓힘으로써, 더욱 넓게 전자 빔(10)을 방사한다. 즉, 발광 면적에 비해서 상대적으로 작은 전자 방출 면적을 갖는다.

公开(公告)号：KR1020000002644A

公开(公告)日：2000-01-15

申请号：KR1019980023494

申请日：1998-06-22

Applicant: 오리온전기 주식회사

Inventor： 황성연

IPC: H05B33/00

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30426

Abstract: PURPOSE: A method of field emission display manufacture is provided to enhance the characteristic and the reliability of the device by coating the material having excellent electronic discharge and durability onto the surface of a tip. CONSTITUTION: A method of field emission display manufacture comprises the steps of: forming a metal tip(15) onto a cathode electrode(11) on the bottom of a gate hole; vertical evaporation of a silicon(17) doped with impurities onto the whole surface; and selective spreading of tungsten(19) formed by WF6 gas resolving reaction of CVD process only onto the silicon.

Abstract translation: 目的：提供一种场发射显示器制造方法，通过将具有优异的电子放电和耐久性的材料涂覆在尖端的表面上来增强器件的特性和可靠性。 构成：场致发射显示器制造方法包括以下步骤：在栅极孔的底部上的阴极电极（11）上形成金属尖端（15） 将掺杂有杂质的硅（17）垂直蒸发到整个表面上; 以及通过CVD工艺的WF 6气体分解反应形成的钨（19）的选择性扩散仅在硅上。

公开(公告)号：KR1019960009127B1

公开(公告)日：1996-07-13

申请号：KR1019930000083

申请日：1993-01-06

Applicant: 삼성에스디아이 주식회사

Inventor： 이강옥

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2209/0226

Abstract: a silicon substrate (31) where the high density impurity is diffused; an emitter (37) projected in the form of a cone connected to a substrate (31); an insulating layer (32,33,34) which is open closely to the emitter and formed on the top of the substrate; a gate electrode (39) which is formed to surround the edge of the opened insulating layer; a metal silicide (40) which is formed to intensify the characteristics of the emitter on top of the emitter.

Abstract translation: 高浓度杂质扩散的硅衬底（31）; 以连接到衬底（31）的锥体的形式突出的发射器（37）; 绝缘层（32,33,34），其与所述发射体紧密地开放并形成在所述衬底的顶部上; 形成为围绕开放绝缘层的边缘的栅电极（39）; 金属硅化物（40），其形成为增强发射极顶部发射极的特性。

公开(公告)号：KR101148555B1

公开(公告)日：2012-05-21

申请号：KR1020090081720

申请日：2009-09-01

Applicant: 캐논 가부시끼가이샤

Inventor： 고바야시,다마끼 ,  니시다,소지 ,  모리꾸찌,다꾸또 ,  쯔까모또,다께오

IPC: H01J1/304

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

Abstract: An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

公开(公告)号：KR1020050115949A

公开(公告)日：2005-12-08

申请号：KR1020057020350

申请日：2004-04-26

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 비세르,휴고,엠. ,  베르스츄렌,마쿠스,에이 ,  빙크,튀니스,제이.

IPC: H01J1/30

CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

Abstract translation: 场发射器件（1）可以用于例如场致发射显示器（FED）中的电子发射。 场发射尖端（40）用于场发射装置（1）中的电子发射。 在场致发射器件（1）的操作中，在与场发射尖端（40）电接触的第一电极（4）和第二电极（34）之间施加电压，以使场发射尖端（40）发射电子 。 为了形成场致发射尖端（40），在设置有第一电极（4）的衬底（2）上施加一层液体材料。 液体材料层被压印有图案化的印模并随后固化以形成场致发射尖端结构（20）。 导电膜（38）被施加到场发射尖端结构（20）上以形成与第一电极（4）电接触的场致发射尖端（40）。