Abstract:
An electron emission device includes a number of second electrodes intersected with a number of first electrodes to define a number of intersections. The first electrode includes a carbon nanotube layer and a semiconductor layer coated on the carbon nanotube layer. An insulating layer is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the semiconductor layer is sandwiched between the insulating layer and the carbon nanotube layer.
Abstract:
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.
Abstract:
The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particles are monodisperse fine particles, and when voltage is applied between the first electrode and the second electrode, electrons are discharged from the first electrode into the insulating fine particle layer and accelerated through the insulating fine particle layer to be emitted from the second electrode.
Abstract:
According to an electron emitting element of the present invention, an electron acceleration layer sandwiched between an electrode substrate and a thin-film electrode contains (i) insulating fine particles and (ii) at least one of (a) conductive fine particles having an average particle diameter smaller than an average particle diameter of the insulating fine particles and (b) a basic dispersant. The electron acceleration layer has a surface roughness of 0.2 μm or less in centerline average roughness (Ra). The thin-film electrode has a film thickness of 100 nm or less. As such, according to the electron emitting element of the present invention, it is possible to reduce the thickness of the thin-film electrode to an appropriate thickness. Accordingly, it is possible to increase electron emission.
Abstract:
The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R−0.67 where Ie [A/cm2] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm2] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10−6, and the electron emission current Ie is not less than 1.0×10−9.
Abstract:
The present invention provides an electron emitting element, comprising: a first electrode; an insulating layer formed on the first electrode and having an opening of through hole; a second electrode formed on the insulating layer, the second electrode being disposed so as to cover at least the opening and face the first electrode via the opening; and a fine particle layer disposed between the first electrode and the second electrode, the fine particle layer being composed of insulating fine particles and conductive fine particles, wherein the insulating layer is disposed between the first electrode and the fine particle layer, or between the second electrode and the fine particle layer, when a voltage is applied between the first electrode and the second electrode, electrons are emitted from the first electrode and accelerated in the fine particle layer to pass through the second electrode.
Abstract:
The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode; and comprising first insulating fine particles and second insulating fine particles larger than the first insulating fine particles, a surface of the insulating fine particle layer having a projection formed from the second insulating fine particles, and a second electrode formed on the insulating fine particle layer, wherein when a voltage is applied between the first electrode and the second electrode, electrons provided from the first electrode are accelerated in the insulating fine particle layer to be emitted from the second electrode via the projection.
Abstract:
The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R−0.67 where Ie [A/cm2] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm2] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10−6, and the electron emission current Ie is not less than 1.0×10−9.
Abstract:
According to an electron emitting element of the present invention, an electron acceleration layer sandwiched between an electrode substrate and a thin-film electrode contains (i) insulating fine particles and (ii) at least one of (a) conductive fine particles having an average particle diameter smaller than an average particle diameter of the insulating fine particles and (b) a basic dispersant. The electron acceleration layer has a surface roughness of 0.2 μm or less in centerline average roughness (Ra). The thin-film electrode has a film thickness of 100 nm or less. As such, according to the electron emitting element of the present invention, it is possible to reduce the thickness of the thin-film electrode to an appropriate thickness. Accordingly, it is possible to increase electron emission.
Abstract:
An electron emitting element of the present invention includes an electron acceleration layer sandwiched between an electrode substrate and a thin-film electrode, and the electron acceleration layer includes a fine particle layer containing insulating fine particles and a basic dispersant. This makes it possible to provide an electron emitting element which does not cause insulation breakdown in an insulating layer and which can be produced at a low cost.