公开(公告)号：EP1793949B1

公开(公告)日：2010-06-23

申请号：EP05857952.5

申请日：2005-09-30

Applicant: Intel Corporation

Inventor： GARNER, Michael ,  HUA, Fay

IPC: B22F1/00

CPC classification number: C22C5/02 ,  B22F1/025 ,  B23K35/0244 ,  H01B1/02 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H05K3/3484 ,  H05K2201/0257 ,  Y10S977/777 ,  Y10T428/12028 ,  Y10T428/12049 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A nano-sized metal particle composition includes a first metal that has a particle size of about 20 nanometer or smaller. The nano-sized metal particle can include a second metal that forms a shell about the first metal. A microelectronic package is also disclosed that uses the nano-sized metal particle composition. A method of assembling a microelectronic package is also disclosed. A computing system is also disclosed that includes the nano-sized metal particle composition.

公开(公告)号：EP2172088A1

公开(公告)日：2010-04-07

申请号：EP08766807.5

申请日：2008-06-16

Applicant: Nederlandse Centrale Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek TNO

Inventor： TACKEN, Roland Anthony ,  DE ZWART, Renatus Marius ,  MEINDERS, Erwin Rinaldo ,  PETER, Maria

IPC: H05K3/10

CPC classification number: H05K3/184 ,  H05K2201/0129 ,  H05K2201/0257 ,  H05K2203/0108 ,  H05K2203/0228 ,  H05K2203/025 ,  H05K2203/0565 ,  H05K2203/0713 ,  H05K2203/1415 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: The invention provides a method for preparing a pattern for an electric circuit comprising the steps of: (a) providing a substrate; (b) providing a pattern of an inhibiting material for an electrical circuit onto said substrate by i) applying a layer of the inhibiting material onto said substrate and mechanically removing locally the layer of the inhibiting material to obtain said pattern; or ii) applying a layer of the inhibiting material onto said substrate, wherein said layer has pre-determined pattern which incompletely covers said substrate; (c) establishing a distribution of particles of a first metal or alloy thereof on the layer of the inhibiting material and the pattern as obtained in step. (b); and (d) depositing by means of an electroless process a layer of a second metal or alloy thereof on the distribution of the particles of the first metal or alloy thereof as obtained in step (c), whereby the inhibiting material that is still present on the substrate after step (b) locally inhibits the second metal or alloy thereof to be deposited on the first metal or alloy thereof, ensuring that the second metal or alloy thereof will selectively be deposited on the particles of the first metal or alloy thereof that are distributed on the pattern obtained in step (b).

公开(公告)号：EP2075802A1

公开(公告)日：2009-07-01

申请号：EP07829964.1

申请日：2007-10-17

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： KAMATA, Toshihide ,  YOSHIDA, Manabu

IPC: H01B5/14 ,  H01B13/00

CPC classification number: H05K3/102 ,  H05K1/0393 ,  H05K3/1283 ,  H05K2201/0257 ,  H05K2203/0278 ,  H05K2203/1105

Abstract: The present invention forms a conductive pattern using a simple process on a general plastic substrate having flexibility, and also provides a conductive pattern forming film that allows for easy formation of a conductive pattern using an apparatus that performs a simple process of oriented pressurization at low temperature, as well as a method for forming conductive pattern and a conductive pattern forming apparatus for the same.
The conductive pattern forming film provides a pattern formed on a film substrate having flexibility by pressurizing, under heating, a conductive paste in which powder or fine particles of metal or semiconductor are dispersed and filled. The conductive pattern forming apparatus comprises a sample installation table having a flat placement surface, and a driving body for pressure application which is placed in a manner facing the placement surface and movable, wherein the driving body for pressure application is equipped with a support which is constituted by a flat metal panel having metal spheres along its bottom face.

Abstract translation: 本发明形成上使用具有一般的塑料基板灵活性一个简单的过程的导电图案，并且因此提供的导电图案的成膜做允许容易地形成使用的装置做了导电图案的在低温下进行定向加压的一个简单的过程 ，以及用于形成导电图案和对于相同的导电图案形成装置的方法。 导电图案成膜提供形成在通过加压具有柔性的薄膜基板的图案，在加热下，将导电糊在哪个粉末或金属或半导体的微粒子分散和填充。 导体图案形成设备包括：具有平坦载置面，其在面向所述放置表面和可动的方式放置，worin驱动体为压力施加配备有支持所有这是一个样本安装表，和用于在压力施加驱动主体的所有 由具有沿其底面金属球扁平的金属板构成。

公开(公告)号：EP2032632A2

公开(公告)日：2009-03-11

申请号：EP07868306.7

申请日：2007-06-14

Applicant: Sabic Innovative Plastics IP B.V.

Inventor： CHAN, Kwok Pong ,  HAGBERG, Erik ,  MULLEN, Tara J. ,  ODLE, Roy Ray

IPC: C08J5/18 ,  C08L79/08

CPC classification number: H05K1/0346 ,  C08G73/1007 ,  C08J5/18 ,  C08J2379/08 ,  C08L79/08 ,  H05K1/0373 ,  H05K2201/0154 ,  H05K2201/0209 ,  H05K2201/0257 ,  H05K2201/068 ,  Y10T428/12569 ,  Y10T428/25 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: A solvent cast film comprises a polyimide comprising structural units derived from polymerization of a dianhydride component comprising a dianhydride selected from the group consisting of 3,4'-oxydiphthalic dianhydride, 3,3'-oxydiphthalic dianhydride, 4,4'- oxydiphthalic dianhydride, and combinations thereof, with a diamine component comprising 4,4'-diaminodiphenylsulfone; wherein the polyimide has a glass transition temperature from 1900°C to 400°C; and wherein the film has a coefficient of thermal expansion of less than 60 ppm/°C, a thickness from 0.1 to 250 micrometers, endless than 5% residual solvent by weight.

公开(公告)号：EP2001273A2

公开(公告)日：2008-12-10

申请号：EP08157722.3

申请日：2008-06-06

Applicant: Valtion Teknillinen Tutkimuskeskus

Inventor： Mattila, Tomi ,  Alastalo, Ari ,  Allen, Mark ,  Seppä, Heikki

IPC: H05K3/10

CPC classification number: H05K3/105 ,  B81C1/00031 ,  H01L2924/0002 ,  H05K1/095 ,  H05K2201/0224 ,  H05K2201/0257 ,  H05K2203/105 ,  Y10S977/762 ,  Y10S977/773 ,  Y10T29/49156 ,  H01L2924/00

Abstract: This publication discloses a method for forming electrically conducting structures (102) on a substrate (100). According to the method nanoparticles (101) containing conducting or semiconducting material are applied on the substrate (100) in a dense formation and a voltage is applied over the nanoparticles so as to at least locally increase the conductivity of the formation. According to the invention, the voltage is high enough to cause melting of the nanoparticles in a breakthrough-like manner. With the aid of the invention, small-linewidth structures can be created without high-precision lithography.

Abstract translation: 该出版物公开了一种在衬底（100）上形成导电结构（102）的方法。 根据该方法，将含有导电或半导体材料的纳米颗粒（101）以致密结构施加在基底（100）上，并且在纳米颗粒上施加电压，以便至少局部地增加地层的导电性。 根据本发明，电压足够高以使得纳米颗粒以类似突破的方式熔化。 借助于本发明，可以在没有高精度光刻的情况下创建小线宽结构。

公开(公告)号：EP1596435A3

公开(公告)日：2008-10-08

申请号：EP05252795.9

申请日：2005-05-06

Applicant: Ricoh Company

Inventor： Sano, Takeshi ,  Ohkura, Hideaki ,  Kobayashi, Hirofumi

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L21/565 ,  H01L21/4867 ,  H01L23/13 ,  H01L23/3107 ,  H01L23/498 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H05K1/0284 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2201/09118 ,  H05K2203/1131 ,  H05K2203/1173 ,  H01L2924/00

Abstract: A pattern form object and its manufacturing method are disclosed. The pattern form object includes a pattern constituted by an aggregate of grains, a supporting member for supporting the pattern, and a mixed layer formed at a boundary of the pattern and the supporting member. The mixed layer is constituted by a mixture of the grains and the supporting member. Dimensions of the grains in a region other than the mixed layer are greater than dimensions of the grains in the mixed layer.

公开(公告)号：EP1158573A4

公开(公告)日：2008-09-24

申请号：EP00966463

申请日：2000-10-13

Applicant: EBARA CORP

Inventor： FUKUNAGA AKIRA ,  HORIE KUNIAKI ,  OGURE NAOAKI ,  KATO TAKAO ,  HONGO AKIHISA ,  NAGASAWA HIROSHI

IPC: B05C11/08 ,  C23C18/00 ,  C23C18/02 ,  C23C18/08 ,  C23C20/04 ,  H01L21/00 ,  H01L21/288 ,  H01L21/768 ,  H01L23/532 ,  H05K1/03 ,  H05K3/04 ,  H05K3/10 ,  H05K3/40 ,  B05C3/02 ,  B05D1/40 ,  H01L21/3205 ,  H05K3/22

CPC classification number: H05K3/4061 ,  B05C11/08 ,  C23C18/02 ,  C23C18/08 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/045 ,  H05K3/102 ,  H05K2201/0257 ,  H01L2924/00

Abstract: A method and apparatus for forming fine interconnection in a large-scale integrated circuit fabricated on a semiconductor substrate comprising a step of preparing a substrate having a surface in which fine recesses are formed, a step of preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least part of which comprise a metal in a specified solvent, a step of supplying the ultrafine particle dispersion liquid into the fine recesses, a step of heat-treating the substrate to melt and bond the metal, and a step of removing extra metal from the surface of the substrate by chemical mechanical polishing. A high-quality metallization can be deposited stably using inexpensive materials.

公开(公告)号：EP1518889B1

公开(公告)日：2008-06-11

申请号：EP04017812.1

申请日：2004-07-28

Applicant: ROBERT BOSCH GMBH

Inventor： Jennrich, Irene ,  Leo, Kristian ,  Muzic, Markus ,  Endres, Wolfgang ,  Holst, Marco

IPC: C08K3/00 ,  C08K9/06 ,  C08L63/02

CPC classification number: B82Y30/00 ,  C08K3/013 ,  C08K2201/011 ,  H05K3/285 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2201/0257

公开(公告)号：EP1518890B1

公开(公告)日：2008-05-14

申请号：EP04017813.9

申请日：2004-07-28

Applicant: ROBERT BOSCH GMBH

Inventor： Jennrich, Irene ,  Leo, Kristian ,  Muzic, Markus ,  Endres, Wolfgang ,  Holst, Marco

IPC: C08K3/00 ,  C08K9/06

CPC classification number: B82Y30/00 ,  C08K3/013 ,  C08K2201/011 ,  H05K3/285 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2201/0257

公开(公告)号：EP1900471A1

公开(公告)日：2008-03-19

申请号：EP06756483.1

申请日：2006-05-23

Applicant: Neomax Materials Co., Ltd.

Inventor： ASADA, Ken, NEOMAX MATERIALS CO., LTD. ,  KIKUI, Fumiaki, NEOMAX MATERIALS CO., LTD.

IPC: B23K35/14 ,  B22F1/02 ,  B23K35/30 ,  B23K35/40 ,  H01L23/12

CPC classification number: B22F1/02 ,  B23K35/02 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/40 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15182 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215 ,  H05K2201/0257 ,  H05K2201/10234 ,  Y02P70/613 ,  Y10T428/12181 ,  Y10T428/2991 ,  Y10T428/2998 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A silver-coated ball 10 according to the present invention includes: a spherical core 1; and a coating layer 2 including silver superfine particles, which is arranged so as to surround the core 1. The silver superfine particles included in the coating layer 2 have a mean particle size of 1 nm to 50 nm.

Abstract translation: 根据本发明的镀银球10包括：球形芯1; 以及包含银超细颗粒的涂层2，其被布置为围绕芯1。包覆在涂层2中的银超微粒的平均粒径为1nm至50nm。