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公开(公告)号：US10305035B2
公开(公告)日：2019-05-28
申请号：US15744063
申请日：2016-04-22
Inventor： Hangbing Lv , Ming Liu , Qi Liu , Shibing Long
Abstract: The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: forming a copper wire in a groove through a Damascus copper interconnection process, wherein the copper wire includes a lower copper electrode for growing a storage medium, and the copper wire is arranged above a first capping layer; forming a second capping layer above the copper wire; forming a hole at a position corresponding to the lower copper electrode on the second capping layer, wherein the pore is used for exposing the lower copper electrode; performing composition and a chemical combination treatment on the lower copper electrode to generate a compound barrier layer, wherein the compound barrier layer is a compound formed by the chemical combination of elements Cu, Si and N, or a compound formed by the chemical combination of elements Cu, Ge and N; and depositing a solid electrolyte material and an upper electrode on the compound barrier layer. By means of the above technical solution, the technical problem of higher injection efficiency of Cu ions in the Cu-based resistive random access memory in the prior art is solved, and the fatigue properties of the memory are improved.
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公开(公告)号：US20180205015A1
公开(公告)日：2018-07-19
申请号：US15744064
申请日：2016-04-22
Inventor： Hangbing LV , Ming LIU , Qi LIU , Shibing LONG
IPC: H01L45/00
Abstract: The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: performing composition and a chemical combination treatment on a lower copper electrode (10) to generate a compound buffer layer (40), wherein the compound buffer layer (40) is capable of preventing the oxidation of the lower copper electrode (10); depositing a solid electrolyte material (50) on the compound buffer layer (40); and depositing an upper electrode (60) on the solid electrolyte material (50) to form the memory. In the above technical solution, the compound buffer layer (40) capable of preventing the oxidation of the lower copper electrode (10) is inserted between the lower copper electrode (10) and the solid electrolyte material (50) to efficiently prevent the oxidation of the lower copper electrode (10) in a growth process of the solid electrolyte material (50), such that an electrode interface does not become rough due to the oxidation, thereby solving the technical problem of relatively low reliability and yield of the device resulting from the rough electrode interface of the Cu-based resistive random access memory in the prior art, and thus the reliability and the yield of the device are improved.
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公开(公告)号：US20160259876A1
公开(公告)日：2016-09-08
申请号：US14403938
申请日：2014-04-25
Inventor： Jianhui Bu , Shuzhen Li , Jiajun Luo , Zhengsheng Han
IPC: G06F17/50
CPC classification number: G06F17/5068 , G06F17/5009 , G06F17/5063 , G06F2217/80
Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module. By establishing the function showing that the STI stress effect of the MOS device changes along with the temperature parameters, the influence of the temperature on the STI stress effect of the MOS device can be accurately described, so that the extracted model parameters are more accurate and reliable.
Abstract translation: 本发明公开了一种MOS器件的STI应力效应建模方法及装置，属于器件参数提取建模技术领域。 该方法包括以下步骤：引入温度参数对MOS器件的STI应力影响的影响，形成MOS器件的STI应力效应随温度参数变化的函数; 在常温下提取MOS器件的Model1型号; 在Model1的基础上，提取STI应力影响常温下MOS器件特性的参数Model2; 并在Model2的基础上，提取功能中MOS器件的拟合参数，以获得最终的模型参数。 该装置包括第一模块，第二模块，第三模块和第四模块。 通过建立显示MOS器件的STI应力效应随温度参数变化的功能，可以准确地描述温度对MOS器件的STI应力影响的影响，从而提取模型参数更准确， 可靠。
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公开(公告)号：US20200219693A1
公开(公告)日：2020-07-09
申请号：US16648665
申请日：2019-02-25
IPC: H01J1/304
Abstract: A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on, a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration.
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公开(公告)号：US20180205014A1
公开(公告)日：2018-07-19
申请号：US15744063
申请日：2016-04-22
Inventor： Hangbing LV , Ming LIU , Qi LIU , Shibing LONG
IPC: H01L45/00
CPC classification number: H01L45/1266 , G11C13/0011 , G11C2213/52 , G11C2213/79 , H01L21/82 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/16 , H01L45/1666 , H01L45/1683
Abstract: The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: forming a copper wire in a groove through a Damascus copper interconnection process, wherein the copper wire includes a lower copper electrode for growing a storage medium, and the copper wire is arranged above a first capping layer; forming a second capping layer above the copper wire; forming a hole at a position corresponding to the lower copper electrode on the second capping layer, wherein the pore is used for exposing the lower copper electrode; performing composition and a chemical combination treatment on the lower copper electrode to generate a compound barrier layer, wherein the compound barrier layer is a compound formed by the chemical combination of elements Cu, Si and N, or a compound formed by the chemical combination of elements Cu, Ge and N; and depositing a solid electrolyte material and an upper electrode on the compound barrier layer. By means of the above technical solution, the technical problem of higher injection efficiency of Cu ions in the Cu-based resistive random access memory in the prior art is solved, and the fatigue properties of the memory are improved.
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Patent Agency Ranking
公开(公告)号：US20140334209A1
公开(公告)日：2014-11-13
申请号：US14361613
申请日：2012-09-27
Inventor： Yongtao Li , Zhangyan Zhao , Wei Qin , Yingjie Li , Yang Xia
IPC: H02M7/06
CPC classification number: H02M7/066 , G01R27/00 , G01R31/00 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H03F3/195 , H03F3/45475 , H03F2203/45138 , H03F2203/45518 , H03F2203/45528 , H04B17/00
Abstract: A radio frequency (RF) power source having a precise power detector includes a RF signal generator, a RF power amplifying circuit, a power supply circuit, and a precise power detector. The precise power detector includes a voltage mutual inductor, a current mutual inductor, a precise detecting module, and a microcontroller integrated with an analog-digital (A/D) converter and a micro-processing unit, wherein the voltage mutual inductor and the current mutual inductor are respectively connected with the precise detecting module. The precise detecting module includes an add circuit, a subtraction circuit, a rectification circuit, and a filtering-amplifying circuit, wherein the add circuit and the subtraction circuit are respectively connected with the rectification circuit, the rectification circuit connects to the filtering-amplifying circuit, the filtering-amplifying circuit connects to the microcontroller integrated with the A/D converter and the micro-processing unit.
Abstract translation: 具有精确功率检测器的射频（RF）电源包括RF信号发生器，RF功率放大电路，电源电路和精确功率检测器。 精密功率检测器包括电压互感器，电流互感器，精确检测模块和与模拟数字（A / D）转换器和微处理单元集成的微控制器，其中电压互感器和电流 互感器分别与精密检测模块相连。 精密检测模块包括加法电路，减法电路，整流电路和滤波放大电路，其中加法电路和减法电路分别与整流电路连接，整流电路连接到滤波放大电路 滤波放大电路连接到与A / D转换器和微处理器集成的微控制器。
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公开(公告)号：US20200235212A1
公开(公告)日：2020-07-23
申请号：US16648242
申请日：2019-02-28
IPC: H01L29/16 , C01B32/194
Abstract: Disclosed is a graphene electrochemical transfer method assisted by multiple supporting films, comprising: (1) growing graphene on a substrate, and then spin-coating a thin layer of photoresist on a surface of the graphene as a first film; (2) spin-coating n layers of thick, tough, and selectively dissolvable polymer films on the surface of the first film as an top film; (3) dissociating the multi-layer composite film and the graphene from the surface of the substrate by an electrochemical process, and dissolving the thick polymer films which is the top film with a first solvent; (4) after cleaning, transferring the thin first film and the graphene to a target substrate, and finally dissolving the thin first film away with a second solvent to complete the transfer process. This transfer process is fast, stable, and capable of transferring a large-size graphene, which may promote the large-scale application of graphene.
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公开(公告)号：US09515567B2
公开(公告)日：2016-12-06
申请号：US14361613
申请日：2012-09-27
Inventor： Yongtao Li , Zhangyan Zhao , Wei Qin , Yingjie Li , Yang Xia
CPC classification number: H02M7/066 , G01R27/00 , G01R31/00 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H03F3/195 , H03F3/45475 , H03F2203/45138 , H03F2203/45518 , H03F2203/45528 , H04B17/00
Abstract: A radio frequency (RF) power source having a precise power detector includes a RF signal generator, a RF power amplifying circuit, a power supply circuit, and a precise power detector. The precise power detector includes a voltage mutual inductor, a current mutual inductor, a precise detecting module, and a microcontroller integrated with an analog-digital (A/D) converter and a micro-processing unit, wherein the voltage mutual inductor and the current mutual inductor are respectively connected with the precise detecting module. The precise detecting module includes an add circuit, a subtraction circuit, a rectification circuit, and a filtering-amplifying circuit, wherein the add circuit and the subtraction circuit are respectively connected with the rectification circuit, the rectification circuit connects to the filtering-amplifying circuit, the filtering-amplifying circuit connects to the microcontroller integrated with the A/D converter and the micro-processing unit.
Abstract translation: 具有精确功率检测器的射频（RF）电源包括RF信号发生器，RF功率放大电路，电源电路和精确功率检测器。 精密功率检测器包括电压互感器，电流互感器，精确检测模块和与模拟数字（A / D）转换器和微处理单元集成的微控制器，其中电压互感器和电流 互感器分别与精密检测模块相连。 精密检测模块包括加法电路，减法电路，整流电路和滤波放大电路，其中加法电路和减法电路分别与整流电路连接，整流电路连接到滤波放大电路 滤波放大电路连接到与A / D转换器和微处理器集成的微控制器。
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19.发明公开METHOD FOR FABRICATING BLACK SILICON BY USING PLASMA IMMERSION ION IMPLANTATION 审中-公开用等离子体浸没离子注入法制造黑色硅的方法
公开(公告)号：EP2578729A1
公开(公告)日：2013-04-10
申请号：EP10851987.7
申请日：2010-07-26
Inventor： XIA, Yang , LIU, Bangwu , LI, Chaobo , LIU, Jie , WANG, Minggang , LI, Yongtao
IPC: C30B33/12
CPC classification number: H01L21/26506 , C30B29/06 , C30B31/22 , H01L21/2236 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
Abstract translation: 提供一种利用等离子体浸没离子注入法制造黑硅的方法，包括：将硅晶片放入黑硅制造装置的腔室中; 将黑硅加工装置的加工参数调整为预设比例; 在黑硅制造装置的腔室中产生等离子体; 将等离子体中的活性离子注入到硅晶片中，并通过反应离子和硅晶片的反应形成黑硅。 该方法可以形成具有强吸光性和对光敏感的黑硅，具有生产率高，成本低，生产工艺简单的优点。
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公开(公告)号：EP2897159B1
公开(公告)日：2017-06-14
申请号：EP12884698.7
申请日：2012-12-31
Applicant: Jiangsu R&D Center For Internet Of Things , The Institute of Microelectronics of Chinese Academy of Sciences , Jiangsu Cas-IGBT Technology Co., Ltd
Inventor： ZHU, Yangjun , WANG, Bo , LU, Shuojin , HU, Aibin
IPC: H01L21/328 , H01L21/331 , H01L29/739 , H01L29/66 , H01L29/06 , H01L29/165
CPC classification number: H01L29/66348 , H01L29/0634 , H01L29/165 , H01L29/7397
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