MEMS DEVICE INCLUDING AN ELECTRODE GUARD RING AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    MEMS DEVICE INCLUDING AN ELECTRODE GUARD RING AND METHOD OF MANUFACTURING THE SAME 审中-公开
    包括电极护环的MEMS器件及其制造方法

    公开(公告)号:WO2015042701A1

    公开(公告)日:2015-04-02

    申请号:PCT/CA2014/050904

    申请日:2014-09-19

    Abstract: A MEMS device including a guard ring surrounding an electrode and a method of manufacturing such a MEMS device are provided. The method includes providing a top cap wafer having a thickness, and a MEMS wafer including a MEMS structure, the MEMS wafer, the top cap wafer and the MEMS wafer being made of an electrically conductive semiconductor material. The method also includes forming an electrode structure into a first side of the top cap wafer. The electrode structure includes an electrode and a guard ring laterally surrounding and electrically insulated from the electrode, the electrode and the guard ring each extending through the entire thickness of the top cap wafer. The method further includes bonding the first side of the top cap wafer to a top side of the MEMS wafer such that an electrical connection is established between the electrode and the MEMS structure.

    Abstract translation: 提供了包括围绕电极的保护环的MEMS器件和制造这种MEMS器件的方法。 该方法包括提供具有厚度的顶盖晶片和包括MEMS结构的MEMS晶片,MEMS晶片,顶盖晶片和MEMS晶片由导电半导体材料制成。 该方法还包括将电极结构形成到顶盖晶片的第一侧。 电极结构包括电极和保护环,其横向地围绕并与电极电绝缘,电极和保护环各自延伸穿过顶盖晶片的整个厚度。 该方法还包括将顶盖晶片的第一侧接合到MEMS晶片的顶侧,使得在电极和MEMS结构之间建立电连接。

    3D MEMS MAGNETOMETER AND ASSOCIATED METHODS
    12.
    发明申请
    3D MEMS MAGNETOMETER AND ASSOCIATED METHODS 审中-公开
    3D MEMS磁铁计及相关方法

    公开(公告)号:WO2016090467A1

    公开(公告)日:2016-06-16

    申请号:PCT/CA2015/051259

    申请日:2015-12-02

    CPC classification number: G01R33/0286 B81B2201/02 G01R33/0206

    Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

    Abstract translation: 提供微机电系统(MEMS)磁力计,用于沿三个正交轴测量磁场分量。 MEMS磁力计包括顶盖晶片,底盖晶片和具有分别结合到顶盖和底盖晶片的相对的顶面和底面的MEMS晶片。 MEMS晶片包括框架结构和载流的第一,第二和第三磁场换能器。 顶盖,底盖和MEMS晶片是导电的并且沿着第三轴线堆叠。 顶盖晶片,底盖晶片和框架结构一起形成包围磁场换能器的一个或多个空腔。 MEMS磁强计进一步包括第一和第三电极组件,第一和第二电极组件形成在顶盖和/或底盖晶片中。 每个电极组件被配置为感测由相应的磁场分量感应的相应磁场换能器的输出。

    FABRICATION METHOD FOR 3D INERTIAL SENSOR
    13.
    发明申请
    FABRICATION METHOD FOR 3D INERTIAL SENSOR 审中-公开
    3D惯性传感器的制造方法

    公开(公告)号:WO2016044932A1

    公开(公告)日:2016-03-31

    申请号:PCT/CA2015/050937

    申请日:2015-09-23

    CPC classification number: B81B7/02 B81C1/00 G01C19/5783 G01P15/0802 G01P15/125

    Abstract: A method for manufacturing a three dimensional MEMS sensor is provided. The MEMS sensor comprises first and second caps bonded to a central MEMS wafer, the central MEMS wafer comprising a MEMS structure. The method comprises a step of forming at least one recess on the inner side of at least one of the silicon- based cap wafers by growing thermal oxide films to consume a portion of silicon. The recess forms the capacitance gap in the MEMS sensor, between one the caps and the MEMS structure. The capacitor gap uniformity is improved by employing a local oxidation or LOCOS process and by removal of the oxide to produce the capacitor gap.

    Abstract translation: 提供了一种用于制造三维MEMS传感器的方法。 MEMS传感器包括结合到中央MEMS晶片的第一和第二盖,中心MEMS晶片包括MEMS结构。 该方法包括通过生长热氧化膜以消耗一部分硅来在至少一个硅基盖晶片的内侧上形成至少一个凹陷的步骤。 凹部形成MEMS传感器中的一个盖和MEMS结构之间的电容间隙。 通过采用局部氧化或LOCOS工艺并通过去除氧化物以产生电容器间隙来改善电容器间隙的均匀性。

    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF
    14.
    发明申请
    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF 审中-公开
    MEMS组件及其水平制造方法

    公开(公告)号:WO2015042700A1

    公开(公告)日:2015-04-02

    申请号:PCT/CA2014/050902

    申请日:2014-09-19

    Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

    Abstract translation: 提供MEMS和制造MEMS部件的方法。 该方法包括提供包括顶盖晶片,MEMS晶片和任选的底盖晶片的MEMS晶片叠层。 MEMS晶片具有图案化的MEMS结构。 MEMS晶片和盖晶片包括形成在晶片堆叠内延伸的绝缘导电路径的绝缘导电沟道。 晶片堆叠结合到在其顶侧上具有电触点的集成电路晶片,使得绝缘导电路径从集成电路晶片延伸到顶盖晶片的外侧。 形成顶盖晶片外侧的电触点,并与顶盖晶片的相应的绝缘导电通道电连接。 然后将MEMS晶片堆叠和集成电路晶片切割成具有容纳在其中的相应密封室和MEMS结构的部件。

    MEMS MOTION SENSOR AND METHOD OF MANUFACTURING
    15.
    发明申请
    MEMS MOTION SENSOR AND METHOD OF MANUFACTURING 审中-公开
    MEMS运动传感器及其制造方法

    公开(公告)号:WO2015013828A1

    公开(公告)日:2015-02-05

    申请号:PCT/CA2014/050730

    申请日:2014-08-01

    CPC classification number: G01C19/56 G01C19/5769 H01L2224/94

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    Abstract translation: 提供了MEMS运动传感器及其制造方法。 该传感器包括一个MEMS晶片,其中包括一个检测质量块和弹性弹簧,弹性悬挂该质量块,并使证明物质相对于外框沿相互正交的x,y和z轴移动。 传感器包括顶盖和底盖晶片,其包括顶盖电极和底盖电极,形成具有检测质量的电容器,电极被配置为检测检测质量块的运动。 电触头设置在顶盖晶片上,其中一些连接到相应的顶盖电极,而另一些则通过绝缘导电通路连接到相应的底盖电极,绝缘导电通道沿着z轴从相应的底部电极之一延伸 帽电极并且依次通过底盖晶片,MEMS晶片的外框架和顶盖晶片。

    MEMS MOTION SENSOR AND METHOD OF MANUFACTURING

    公开(公告)号:US20230304797A9

    公开(公告)日:2023-09-28

    申请号:US14622548

    申请日:2015-02-13

    CPC classification number: G01C19/5712 G01C25/00

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    Multi-mass MEMS motion sensor
    17.
    发明授权

    公开(公告)号:US11674803B2

    公开(公告)日:2023-06-13

    申请号:US15315894

    申请日:2015-01-12

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    3D MEMS MAGNETOMETER AND ASSOCIATED METHODS
    19.
    发明申请

    公开(公告)号:US20170363694A1

    公开(公告)日:2017-12-21

    申请号:US15534702

    申请日:2015-12-02

    CPC classification number: G01R33/0286 B81B2201/02 G01R33/0206

    Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

    MEMS PRESSURE SENSOR
    20.
    发明申请
    MEMS PRESSURE SENSOR 审中-公开
    MEMS压力传感器

    公开(公告)号:US20170030788A1

    公开(公告)日:2017-02-02

    申请号:US15302731

    申请日:2015-01-15

    Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent is extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps, to form a differential pressure sensor.

    Abstract translation: 本发明提供一种MEMS压力传感器及其制造方法。 压力由顶盖晶片,MEMS晶片和底盖晶片形成。 MEMS晶片包括框架和膜,框架限定空腔。 膜通过框架悬挂在空腔上。 底盖晶片封闭空腔。 顶盖晶片具有限定了膜的电容间隙的凹部。 顶盖晶片包括位于膜上方的顶盖电极,并与膜一起形成电容器以检测膜的偏转。 顶盖晶片上的电触点连接到顶盖电极。 通气孔从传感器的外部延伸到空腔或电容间隙。 压力传感器可以包括两个空腔和两个电容间隙,以形成差压传感器。

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