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公开(公告)号:KR102102252B1
公开(公告)日:2020-04-20
申请号:KR1020180039526
申请日:2018-04-05
Applicant: 성균관대학교산학협력단
IPC: H01L21/8238 , H01L29/737 , H01L29/66 , H01L29/43 , H01L21/3205
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公开(公告)号:KR1020110021044A
公开(公告)日:2011-03-04
申请号:KR1020090078613
申请日:2009-08-25
Applicant: 주식회사 피플웍스 , 성균관대학교산학협력단
CPC classification number: H03F1/3241 , H03F1/3276
Abstract: PURPOSE: A predistortion linearizer is provided to reduce the size of a non-linear power amplifier by increasing the integration of a circuit. CONSTITUTION: A serial predistortion linearization system(201) improves the linearity of a nonlinear amplifier by generating a signal which has the same size of a distortion signal while having the opposite phase to the distortion signal. A first resistor(202) is connected between the input terminal and the output terminal of the serial predistortion linearization system. A second resistor(203) is interposed between the input terminal of the input terminal of the serial predistortion linearization system and the ground. A third resistor(204) is installed between the output terminal and the ground of the serial predistortion linearization system. A power amplifier(205) is a nonlinear amplifier connected to the output terminal of the serial predistortion linearization system.
Abstract translation: 目的:提供一种预失真线性化器,通过增加电路的积分来减小非线性功率放大器的尺寸。 构成:串行预失真线性化系统(201)通过产生具有与失真信号相反的相位的失真信号的大小的信号来提高非线性放大器的线性度。 第一电阻(202)连接在串行预失真线性化系统的输入端和输出端之间。 在串行预失真线性化系统的输入端子的输入端子与地之间插入第二电阻器(203)。 第三电阻器(204)安装在串行预失真线性化系统的输出端子和地之间。 功率放大器(205)是连接到串行预失真线性化系统的输出端的非线性放大器。
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公开(公告)号:KR102257243B1
公开(公告)日:2021-05-27
申请号:KR1020140010721
申请日:2014-01-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/16 , H01L29/772 , H01L21/335
Abstract: 튜너블배리어를구비한그래핀트랜지스터가개시된다. 개시된그래핀트랜지스터는반도체기판상에배치된절연박막과, 상기절연박막상의그래핀층과, 상기그래핀층의일단부와연결된제1전극과, 상기그래핀층의타단부로부터이격되며상기반도체기판과접촉하는제2전극과, 상기그래핀층상의게이트전극을포함한다. 상기반도체기판및 상기그래핀층사이에튜너블에너지배리어가형성된다.
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公开(公告)号:KR1020170109461A
公开(公告)日:2017-09-29
申请号:KR1020160033647
申请日:2016-03-21
Applicant: 성균관대학교산학협력단
IPC: H01L29/788 , H01L29/423 , H01L29/73 , H01L29/417 , H01L29/66
CPC classification number: H01L29/7883 , H01L29/41733 , H01L29/42324 , H01L29/66765 , H01L29/7311
Abstract: 본발명의일 실시예에따른공명터널소자(resonant tunneling device)는축퇴된반도체층; 축퇴된반도체층상에형성되는제 1 무기물층; 제 1무기물층상에형성되는유기물층; 및유기물층상에형성되는전극층을포함하되, 유기물층은불연속적인복수의에너지준위를갖도록형성된다.
Abstract translation: 根据本发明实施例的谐振隧穿器件包括退化半导体层; 形成在退化半导体层上的第一无机材料层; 形成在第一无机材料层上的有机材料层; 以及形成在有机层上的电极层,其中有机层形成为具有多个不连续的能级。
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公开(公告)号:KR1020150089742A
公开(公告)日:2015-08-05
申请号:KR1020140010721
申请日:2014-01-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/16 , H01L29/772 , H01L21/335
CPC classification number: H01L29/1606 , H01L29/78
Abstract: 튜너블배리어를구비한그래핀트랜지스터가개시된다. 개시된그래핀트랜지스터는반도체기판상에배치된절연박막과, 상기절연박막상의그래핀층과, 상기그래핀층의일단부와연결된제1전극과, 상기그래핀층의타단부로부터이격되며상기반도체기판과접촉하는제2전극과, 상기그래핀층상의게이트전극을포함한다. 상기반도체기판및 상기그래핀층사이에튜너블에너지배리어가형성된다.
Abstract translation: 公开了一种包括可调屏障的石墨烯晶体管。 所公开的石墨烯晶体管包括布置在半导体衬底上的绝缘薄膜; 绝缘薄膜上的石墨烯层; 连接到所述石墨烯层的一端的第一电极; 与石墨烯层的另一端分离并与半导体基板接触的第二电极; 和石墨烯层上的栅电极。 在半导体衬底和石墨烯层之间形成能量势垒。
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公开(公告)号:KR1020110021045A
公开(公告)日:2011-03-04
申请号:KR1020090078614
申请日:2009-08-25
Applicant: 주식회사 피플웍스 , 성균관대학교산학협력단
CPC classification number: H03F1/3241 , H03F1/3276
Abstract: PURPOSE: A predistortion linearizer is provided to increase the integration of a circuit by using a simple circuit instead of an attenuator to control the size of a distortion signal. CONSTITUTION: A parallel predistortion linearization system(201) improves the linearity of a nonlinear amplifier by generating a signal which has the same size of a distortion signal while having the opposite phase to the distortion signal. A first resistor(202) is connected between the input terminal and the output terminal of the parallel predistortion linearization system. A second resistor(203) is connected to one end of the first resistor and is interposed between the output terminal of the parallel predistortion linearization system and the ground. A power amplifier(204) is comprised of a nonlinear amplifier which is connected between the input terminal of the signal and the other terminal of the first resistor.
Abstract translation: 目的:提供一种预失真线性化电路,通过使用简单的电路来增加电路的积分,而不是衰减器来控制失真信号的大小。 构成:并行预失真线性化系统(201)通过产生具有与失真信号相反的相位的失真信号的大小的信号来提高非线性放大器的线性度。 第一电阻器(202)连接在并行预失真线性化系统的输入端子和输出端子之间。 第二电阻器(203)连接到第一电阻器的一端并插入在并联预失真线性化系统的输出端子和地之间。 功率放大器(204)由连接在信号的输入端和第一电阻的另一端之间的非线性放大器组成。
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公开(公告)号:KR102256017B1
公开(公告)日:2021-05-24
申请号:KR1020140010889
申请日:2014-01-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/265 , H01L21/84
Abstract: 2차원반도체의도핑방법이개시된다. 개시된 2차원반도체의도핑방법은기판상에반도체층을형성하는단계와, 상기반도체층에이온을주입하는단계와, 상기반도체층상에 2차원반도체또는유기물반도체로이루어진도프층을형성하는단계와상기기판을열처리하여상기반도체층의상기이온을상기도프층으로확산시켜서상기도프층을도핑하는단계를포함한다.
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公开(公告)号:KR101936358B1
公开(公告)日:2019-01-08
申请号:KR1020170073336
申请日:2017-06-12
Applicant: 성균관대학교산학협력단
IPC: H01L27/06 , H01L29/861 , H01L27/24
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公开(公告)号:KR101802775B1
公开(公告)日:2017-11-29
申请号:KR1020160033647
申请日:2016-03-21
Applicant: 성균관대학교산학협력단
IPC: H01L29/788 , H01L29/423 , H01L29/73 , H01L29/417 , H01L29/66
Abstract: 본발명의일 실시예에따른공명터널소자(resonant tunneling device)는축퇴된반도체층; 축퇴된반도체층상에형성되는제 1 무기물층; 제 1무기물층상에형성되는유기물층; 및유기물층상에형성되는전극층을포함하되, 유기물층은불연속적인복수의에너지준위를갖도록형성된다.
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