公开(公告)号：KR1020100032513A

公开(公告)日：2010-03-26

申请号：KR1020080091436

申请日：2008-09-18

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  김범준 ,  장삼석 ,  이승무 ,  이광택 ,  진정근

IPC: H01L33/16 ,  H01L33/12 ,  H01L21/265 ,  H01L21/20

CPC classification number: H01L21/0237 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L33/007

Abstract: PURPOSE: A nitride method for forming a semiconductor through an ion implantation and a light emitting diode which it manufactures using this instead of forms the ion implantation region controlling the dose amount for a horizontal deposition method mask on a domain in a form of the line and space. The dislocation density of a gallium nitride film having the stable crystalline is reduced. CONSTITUTION: An ion implantation region(120) of line and space pattern is formed on a surface of a silicon substrate(100). At this time, the ion implant dose quantity controls 1E17 ion/cm excess 5E18 ion/cm this harrow. The ion implantation region is formed into the implant energy of 30 ~ 50keV. A GaN thin film(130) is formed on the silicon substrate front including the InxAlyGa1-x-yN layer. At this time, in the silicon substrate in which the ion implantation region is not formed, the GaN layer is grown horizontally to the ion implantation region and the GaN thin film is formed.

Abstract translation: 目的：通过离子注入形成半导体的氮化物方法和使用其制造的发光二极管，而不是形成离子注入区域，以离子注入区域形式控制在线形式的域上的水平沉积方法掩模的剂量， 空间。 具有稳定结晶性的氮化镓膜的位错密度降低。 构成：在硅衬底（100）的表面上形成线和空间图案的离子注入区（120）。 此时，离子注入剂量控制1E17离子/ cm超过5E18离子/ cm这种耙子。 离子注入区形成为30〜50keV的注入能量。 在包括In x Al y Ga 1-x-y N层的硅衬底正面上形成GaN薄膜（130）。 此时，在没有形成离子注入区域的硅衬底中，GaN层与离子注入区域水平生长，形成GaN薄膜。

公开(公告)号：KR101082457B1

公开(公告)日：2011-11-11

申请号：KR1020100036169

申请日：2010-04-20

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  김상일 ,  김범준 ,  장삼석 ,  박지훈

IPC: H01L21/20

Abstract: 본발명은공정이간단하면서도에피택셜층내에생성된결함을최소화할수 있는에피택셜층을형성하는방법및 이에의해제조된적층구조물에관한것이다. 본발명에따른에피층형성방법은기판상에포토레지스트패턴을형성하는단계와, 포토레지스트패턴을탄화시켜마스크패턴을형성하는단계와, 기판과마스크패턴이함께덮이도록상기기판상에에피택셜층을형성하는단계를갖는다.

公开(公告)号：KR1020110040637A

公开(公告)日：2011-04-20

申请号：KR1020100033276

申请日：2010-04-12

Applicant: 고려대학교 산학협력단

Inventor： 김동환 ,  이현주 ,  김성원 ,  김준희 ,  변동진 ,  장삼석 ,  김범준

IPC: B82B3/00 ,  H01L31/04

CPC classification number: Y02E10/542 ,  Y02P70/521 ,  B82B3/00 ,  H01L31/04

Abstract: PURPOSE: A method for manufacturing a silicon nano-wire/zinc oxide core/shell nano composite and a solar cell including the nano composite are provided to use the nano composite as the counter electrode of a dye-sensitized solar cell by forming a zinc oxide. CONSTITUTION: A mono-crystalline silicon substrate is undergone ultraviolet/ozone treatment. The substrate is etched using an etching solution. The etching solution is based on the mixture of HF and AgNO_3. The etched substrate is immerged in a HNO_3 solution in order to eliminate silver dendrite from the substrate. A cleaning process and a drying process are implemented to obtain a silicon substrate. Silicon nano-wires are vertically arranged on the silicon substrate. Zinc source is applied to the silicon substrate, and first purging gas is purged on the silicon substrate. Oxygen source is applied to the silicon substrate, and second purging gas is purged on the silicon substrate.

Abstract translation: 目的：提供一种制造硅纳米线/氧化锌核/壳纳米复合材料的方法和包括该纳米复合材料的太阳能电池，以通过形成氧化锌来使用该纳米复合材料作为染料敏化太阳能电池的对电极 。 构成：单晶硅衬底经过紫外线/臭氧处理。 使用蚀刻溶液蚀刻衬底。 蚀刻溶液基于HF和AgNO_3的混合物。 将蚀刻的基底浸入HNO 3溶液中以从基底中除去银枝晶。 实施清洁处理和干燥处理以获得硅衬底。 硅纳米线垂直排列在硅衬底上。 将锌源施加到硅衬底，并且在硅衬底上吹扫第一吹扫气体。 将氧源施加到硅衬底，并且第二清洗气体在硅衬底上被清除。

公开(公告)号：KR1020110040636A

公开(公告)日：2011-04-20

申请号：KR1020100033269

申请日：2010-04-12

Applicant: 고려대학교 산학협력단

Inventor： 김동환 ,  이현주 ,  김성원 ,  김준희 ,  변동진 ,  장삼석 ,  김범준

IPC: B82B3/00 ,  H01L31/04

CPC classification number: Y02E10/542 ,  Y02P70/521 ,  B82B3/00 ,  H01L31/04

Abstract: PURPOSE: A method for manufacturing a silicon nano-wire/carbon-nano-tube/zinc oxide core/multi-shell nano composite and a solar cell including the nano composite are provided to vertically arrange the nano composite on a large-sized substrate. CONSTITUTION: A mono-crystalline silicon substrate undergoes ultraviolet/ozone treatment. The substrate is etched using an etching solution. The etching solution is based on a mixture of HF and AgNO_3. The etched substrate is immersed in a HNO_3 solution in order to eliminate silver dendrite from the substrate. A cleaning process and a drying process are implemented. A silicon substrate, on which silicon nano-wire is vertically arranged, is obtained. The silicon substrate is arranged in a thermal chemical vapor deposition apparatus, and carbon-nano-tube is deposited on the silicon nano-wire in order to obtain a silicon nano-wire/carbon-nano-tube core/shell nano composite.

Abstract translation: 目的：提供一种制造硅纳米线/碳纳米管/氧化锌核/多壳纳米复合材料的方法和包括纳米复合材料的太阳能电池，以将纳米复合材料垂直布置在大尺寸基板上。 构成：单晶硅衬底进行紫外/臭氧处理。 使用蚀刻溶液蚀刻衬底。 蚀刻溶液基于HF和AgNO_3的混合物。 将蚀刻的衬底浸入HNO 3溶液中以从衬底中除去银枝晶。 实施清洁处理和干燥处理。 获得其上垂直排列有硅纳米线的硅衬底。 将硅衬底布置在热化学气相沉积装置中，并将碳纳米管沉积在硅纳米线上以获得硅纳米线/碳纳米管核/壳纳米复合材料。

公开(公告)号：KR1020090060476A

公开(公告)日：2009-06-15

申请号：KR1020070127296

申请日：2007-12-10

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  김범준 ,  장삼석 ,  이도한 ,  이광택

IPC: H01L21/318 ,  H01L21/265

CPC classification number: H01L21/0254 ,  H01L21/0262 ,  H01L21/76254

Abstract: A nitride semiconductor device including a buffer layer and a manufacturing method thereof are provided to form a GaN layer without a crack by forming an ion implanted layer into a periodic pattern shape on a surface of a silicon substrate. A silicon substrate(310) includes an ion implanted region(330). A buffer layer(340) is formed on the silicon substrate in which the ion implanted region is formed. A GaN layer(350) is formed on the buffer layer. The ion implanted region has a lattice distortion region formed into a periodic pattern shape and a region in which an ion is not implanted. An ion implanted depth of the ion implanted region is 30nm~1um. The buffer layer is made of InAlGaN.

Abstract translation: 提供了包括缓冲层的氮化物半导体器件及其制造方法，以通过在硅衬底的表面上形成周期性图案形状的离子注入层来形成没有裂纹的GaN层。 硅衬底（310）包括离子注入区（330）。 在其上形成有离子注入区的硅衬底上形成缓冲层（340）。 在缓冲层上形成GaN层（350）。 离子注入区域具有形成为周期性图案形状的晶格畸变区域和不注入离子的区域。 离子注入区的离子注入深度为30nm〜1um。 缓冲层由InAlGaN制成。