公开(公告)号：KR1020140043677A

公开(公告)日：2014-04-10

申请号：KR1020130115028

申请日：2013-09-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오카마사히로 ,  고바야시유우키 ,  우에다히로카즈 ,  호리고메마사히로

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01L21/22 ,  H01L21/2236 ,  H01L21/67011 ,  H01L21/67109 ,  H01L21/6831 ,  H01L29/66803

Abstract: Provided is a plasma doping apparatus which performs doping without deforming a substrate before and after the doping with good conformaility, and makes the injected dopants be not separated in a process of cleaning after the doping. A control unit (28), which is formed to the plasma doping apparatus, controls a pressure control unit to make the pressure in a processing container (32) be a first pressure, controls a bias power supply unit to make a bias power which is supplied to a maintenance unit (34) be a first bias power; performs a first plasma processing on a substrate (W) which is to be processed by the plasma generated by a plasma generation unit (39); controls the pressure control unit to make the pressure within the processing container be a second pressure which is higher than the first pressure after the first plasma processing; controls the bias power supply unit to make the bias power supplied to the maintenance unit to be a second bias power which is lower than the first bias power; and performs a second plasma processing on the target substrate by the plasma generated by the plasma generation unit.

Abstract translation: 提供了一种等离子体掺杂装置，其在良好的适形性下，在掺杂前后进行掺杂而不使基板发生变形，并且使得注入的掺杂剂在掺杂后的清洗过程中不分离。 形成在等离子体掺杂装置上的控制单元（28）控制压力控制单元使处理容器（32）中的压力为第一压力，控制偏压供电单元以产生偏压功率 提供给维护单元（34）的是第一偏置功率; 对由等离子体产生单元（39）产生的等离子体进行处理的基板（W）进行第一等离子体处理。 控制所述压力控制单元使得所述处理容器内的压力为所述第一等离子体处理之后的所述第一压力以上的第二压力; 控制所述偏置电源单元，使提供给所述维护单元的偏置功率为低于所述第一偏置功率的第二偏置功率; 并且通过由等离子体产生单元产生的等离子体对目标衬底进行第二等离子体处理。