公开(公告)号：KR1020070100391A

公开(公告)日：2007-10-10

申请号：KR1020077019763

申请日：2006-07-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나카무라가즈히토 ,  야마사키히데아키 ,  가와노유미코

IPC: H01L21/205

CPC classification number: C23C16/46 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843

Abstract: a first gas-feeding step in which an organic raw-material gas for a high-melting metal is fed to a treatment vessel capable of evacuation; and a second gas-feeding step in which any one of a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas or a gas mixture comprising two or more of these is fed to the treatment vessel. In the method, a thin metal compound film comprising any one or more of the nitrides, silicides, and carbides of the high-melting metal is formed on the surface of a work placed in the treatment vessel. The first gas-feeding step and the second gas-feeding step are alternately conducted. During the first gas-feeding step and the second gas-feeding step, the temperature of the work is kept at a temperature not lower than the decomposition initiation temperature of the organic raw material for a high-melting metal.

Abstract translation: 第一供气步骤，其中用于高熔点金属的有机原料气体被供给到能够排空的处理容器; 以及第二供气步骤，其中将含氮气体，含硅气体和含碳气体中的任一种或其中包含两种或更多种的气体混合物中的任一种进料到处理容器中。 在该方法中，在放置在处理容器中的工件的表面上形成包含高熔点金属的氮化物，硅化物和碳化物中的一种或多种的薄金属化合物膜。 交替进行第一供气步骤和第二气体供给步骤。 在第一供气步骤和第二气体供给步骤期间，工件的温度保持在不低于高熔点金属的有机原料的分解开始温度的温度。

公开(公告)号：KR1020050087807A

公开(公告)日：2005-08-31

申请号：KR1020057009559

申请日：2003-11-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마사키히데아키 ,  나카무라가즈히토 ,  마츠자와고우메이 ,  마츠다츠카사 ,  가와노유미코

IPC: H01L21/30

CPC classification number: C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

Abstract: A method for cleaning a substrate processing chamber which causes less damage to members in the substrate processing chamber is disclosed. The method for cleaning a processing chamber of an apparatus for processing a substrate comprises a gas supply step wherein a gas is supplied into a remote plasma generating unit provided to the substrate processing apparatus, a reacting species formation step wherein a reacting species is formed by exciting the gas in the remote plasma generating unit, and a reaction step wherein the reacting species is supplied into the processing chamber from the remote plasma generating unit while keeping the pressure within the processing chamber at 1333 Pa or higher.

Abstract translation: 公开了一种用于清洁对衬底处理室中的构件造成较小损坏的衬底处理室的方法。 用于清洁处理基板的设备的处理室的方法包括：气体供给步骤，其中将气体供应到设置到基板处理设备的远程等离子体生成单元中，反应物质形成步骤，其中通过激发形成反应物质 远程等离子体发生单元中的气体，以及反应步骤，其中将反应物质从远程等离子体发生单元供应到处理室中，同时将处理室内的压力保持在1333Pa或更高。