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公开(公告)号：KR101708935B1
公开(公告)日：2017-02-21
申请号：KR1020100066540
申请日：2010-07-09
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/68
CPC classification number: C23C8/36 , C23C8/80 , C23C16/325 , C23C16/4404 , C23C16/56 , H01J2237/31
Abstract: 표면에파쇄층을갖고탄화규소(SiC)로이루어지는부재의표면처리방법에있어서, 상기파쇄층으로이루어지는부재표면을치밀층으로개질하여상기부재를플라즈마처리장치에적용했을때의상기부재표면으로부터방출되는입자수를감소시킨다. 여기에서, 상기부재표면의 SiC는상기파쇄층을가열함으로써재결정된다.
Abstract translation: 在用于处理由碳化硅（SiC）制成的并且在其表面上具有碎裂层的构件的表面的表面处理方法中，具有碎裂层的构件的表面被修改为致密层以减少颗粒的数量 当构件被施加到等离子体处理装置时从构件的表面产生。 这里，通过加热碎片层使构件表面的SiC再结晶。
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公开(公告)号：KR1020140095018A
公开(公告)日：2014-07-31
申请号：KR1020140005497
申请日：2014-01-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01J37/32642
Abstract: Provided is a method of affixing a heat transfer sheet that can achieve high heat transfer efficiency between a table and a focus ring. There is provided a heat transfer sheet affixing method where a focus ring is pressed by a pressing part to a heat transfer sheet placed on a heat transfer sheet mounting part of a plasma processing apparatus to affix the heat transfer sheet to the focus ring. The method includes the steps of reducing a pressure to place the heat transfer sheet in a reduced-pressure atmosphere; heating the heat transfer sheet; and pressing the focus ring by the pressing part to the heat transfer sheet, wherein the reducing step, the heating step, and the pressing step are performed concurrently at least for a predetermined period of time.
Abstract translation: 提供了一种固定可在桌子和聚焦环之间实现高传热效率的传热片材的方法。 提供了一种传热片固定方法，其中聚焦环通过按压部分被压在放置在等离子体处理设备的传热片安装部分上的传热片上，以将传热片固定到聚焦环。 该方法包括降低压力以将传热片放置在减压气氛中的步骤; 加热传热片; 并且通过所述按压部将所述聚焦环按压到所述传热片，其中所述还原步骤，加热步骤和所述按压步骤至少同时进行预定时间段。
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公开(公告)号：KR1020110005661A
公开(公告)日：2011-01-18
申请号：KR1020100066540
申请日：2010-07-09
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/68
CPC classification number: C23C8/36 , C23C8/80 , C23C16/325 , C23C16/4404 , C23C16/56 , H01J2237/31 , H01L21/3065 , H01L21/02 , H01L21/205 , H01L21/68 , H01L21/76825 , H01L21/76826
Abstract: PURPOSE: A surface processing method is provided to eliminate all the fractured layers formed on the surface of the member including the fractured layer of a stepped part by reforming the member surface. CONSTITUTION: A focus ring(25) is configured by a ring-shaped member having a step(25a) on the inner side. The step is formed in response to the outer side of a wafer. An upper side(25d), a lower side(25e), and sides(25g, 25f) of the focus ring are formed by the mechanical polishing. A horizontal part(25b) and a corner(25c) of the step are polished manually.
Abstract translation: 目的：提供表面处理方法，通过重构构件表面来消除在包括阶梯部分的断裂层的构件的表面上形成的所有断裂层。 构成：聚焦环（25）由在内侧具有台阶（25a）的环状构件构成。 该步骤响应于晶片的外侧形成。 通过机械抛光形成聚焦环的上侧（25d），下侧（25e）和侧面（25g，25f）。 手工抛光台阶的水平部分（25b）和拐角（25c）。
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公开(公告)号：KR1020100133910A
公开(公告)日：2010-12-22
申请号：KR1020100055307
申请日：2010-06-11
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862 , H01L21/02079
Abstract: PURPOSE: A consumable parts reusing method for a plasma processing apparatus is provided to improve the quality of reused consumable parts by cleaning the surface of the consumable parts before a silicon carbide deposition process is implemented. CONSTITUTION: Silicon carbide is deposited to prepared silicon carbide lump through a chemical vapor deposition process. The silicon carbide lump is processed to prepare consumable parts for a plasma processing apparatus in a pre-set shape. A plasma processing process is implemented with respect to a substrate using the consumable parts. The surface of the consumable parts is cleaned. Silicon carbide is re-deposited on the surface of the consumable parts in order to prepare another silicon carbide lump(42).
Abstract translation: 目的：提供等离子体处理装置的消耗部件再利用方法，以在实施碳化硅沉积工艺之前通过清洁消耗部件的表面来提高再利用的消耗部件的质量。 构成：通过化学气相沉积工艺沉积碳化硅以制备碳化硅块。 处理碳化硅块，以预先设定的形状制备等离子体处理装置的消耗部件。 使用消耗部件相对于基板实施等离子体处理工艺。 消耗部件的表面被清洁。 为了制备另一个碳化硅块（42），将碳化硅再沉积在消耗部件的表面上。
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