公开(公告)号：KR1020130086162A

公开(公告)日：2013-07-31

申请号：KR1020130002788

申请日：2013-01-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시고로 ,  사이토타카노리 ,  왕웬링 ,  요시이코지 ,  야마구치타츠야

IPC: H01L21/205 ,  C23C16/46 ,  C23C16/52

CPC classification number: F27D19/00 ,  F27B17/0025 ,  F27D21/0014 ,  H01L21/67109 ,  H01L21/67248

Abstract: PURPOSE: A thermal treatment apparatus and a control method thereof are provided to be able to rapidly recover the inner temperature of the thermal treatment apparatus in case that the inner temperature of the thermal treatment apparatus has changed. CONSTITUTION: A heating portion (52) heats a subject accepted in a treatment chamber (4). A temperature detection part detects the temperature inside the treatment chamber. A control unit (70) sets up a second pre-set temperature identical to the temperature detected by the temperature detection part in case that the temperature detected by the temperature detection part is lower than a first pre-set temperature. The control unit controls the heating portion so that a third pre-set temperature becomes identical to the temperature detected by the temperature detection part. The control unit controls the heating portion so that the first pre-set temperature becomes identical to the temperature detected by the temperature detection part. [Reference numerals] (AA) Exhaust

Abstract translation: 目的：提供一种热处理装置及其控制方法，以便能够在热处理装置的内部温度变化的情况下迅速恢复热处理装置的内部温度。 构成：加热部分（52）加热处理室（4）中接受的受试者。 温度检测部检测处理室内的温度。 在由温度检测部检测到的温度低于第一预设温度的情况下，控制单元（70）设定与由温度检测部检测出的温度相同的第二预设温度。 控制单元控制加热部，使得第三预设温度与由温度检测部检测到的温度相同。 控制单元控制加热部，使得第一预设温度与由温度检测部检测到的温度相同。 （附图标记）（AA）排气

公开(公告)号：KR1020120112131A

公开(公告)日：2012-10-11

申请号：KR1020120031613

申请日：2012-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시이코지 ,  야마구치타츠야 ,  왕웬링 ,  사이토타카노리

IPC: H01L21/22 ,  H01L21/316 ,  H01L21/324

CPC classification number: H01L21/67109 ,  G05D23/1931 ,  H01L21/324 ,  H01L21/67248

Abstract: PURPOSE: A heat treatment control system and a heat treatment control method are provided to rapidly and precisely perform thermal treatment for a processed object by controlling a heating part using the temperature of a processed object which is estimated by a temperature estimating part. CONSTITUTION: A heating portion(18A) is formed on an inner surface of a furnace body(5). A cover body(10) seals a lower opening of a treatment basin(3). The cover body is installed to be elevated by a lifting mechanism(13A). A temperature sensor(50) detects the temperature in the treatment basin. A temperature estimating part(51A) estimates the temperature of a processed object(W) based on a detection signal from the temperature sensor. [Reference numerals] (AA) From 80; (BB) From 81,82; (CC) From 83

Abstract translation: 目的：提供热处理控制系统和热处理控制方法，通过使用由温度估计部估计的加工对象的温度来控制加热部，对被处理物进行快速且精确地进行热处理。 构成：在炉体（5）的内表面上形成加热部（18A）。 盖体（10）密封处理池（3）的下部开口。 盖主体安装成由提升机构（13A）升高。 温度传感器（50）检测处理池中的温度。 温度推定部（51A）基于来自温度传感器的检测信号来估计被处理物体（W）的温度。 （标号）（AA）80; （BB）81,82; （CC）从83

公开(公告)号：KR1020120112054A

公开(公告)日：2012-10-11

申请号：KR1020120029164

申请日：2012-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이도야스유키 ,  스기타킷페이 ,  야마구치타츠야

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L21/02118 ,  C23C16/02 ,  C23C16/22 ,  C23C16/4405 ,  H01L21/02271 ,  H01L21/02304

Abstract: PURPOSE: A cleaning method and a film depositing method are provided to prevent the carbonization of polyimide by heating a deposition container at 360°C to 540 deg;C in the state creating oxygen atmosphere. CONSTITUTION: A first source gas and a second source gas are provided within a deposition container. The first source gas is comprised of acid anhydride. The second source gas is comprised of diamine. Oxygen atmosphere is created within the deposition container(S12). The deposition container is heated at 360°C to 540 deg;C in the state of the oxygen atmosphere(S13). Polyimide is eliminated by oxidizing the polyimide remaining within the deposition container(S18). [Reference numerals] (AA) Start; (BB) Treatment process; (CC) End; (S11) Carrying a wafer in a deposition container(carry-in process); (S12) Decompressing the inner side of the deposition container(decompression process); (S13) Raising the temperature of the wafer to a deposition temperature(recovery process); (S14) Forming a polyimide film(film forming process); (S15) Purging the inner side of the deposition container(purge process); (S16) Restoring the pressure of the inner side of the deposition container to atmospheric pressure(pressure restoration process); (S17) Carrying out the wafer from the deposition container(carry-out process); (S18) Oxidizing and removing polyimide remaining in the deposition container

Abstract translation: 目的：提供清洁方法和膜沉积方法，以在产生氧气氛的状态下，通过在360℃至540℃下加热沉积容器来防止聚酰亚胺的碳化。 构成：第一源气体和第二源气体设置在沉积容器内。 第一源气由酸酐组成。 第二源气由二胺构成。 在沉积容器内产生氧气（S12）。 在氧气氛中，沉积容器在360℃加热至540℃（S13）。 通过氧化保留在沉积容器内的聚酰亚胺来除去聚酰亚胺（S18）。 （附图标记）（AA）开始; （BB）治疗过程; （CC）结束; （S11）在沉积容器中携带晶片（进入工艺）; （S12）解压缩沉积容器的内侧（减压处理）; （S13）将晶片的温度提高至沉积温度（恢复处理）; （S14）形成聚酰亚胺膜（成膜法）; （S15）清洗沉积容器的内侧（吹扫处理）; （S16）将沉积容器的内侧的压力恢复到大气压（压力恢复处理）; （S17）从沉积容器进行晶片（进行处理）; （S18）保留在沉积容器中的氧化和除去聚酰亚胺