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公开(公告)号：KR101571019B1
公开(公告)日：2015-11-23
申请号：KR1020120029162
申请日：2012-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312
CPC classification number: H01L21/02118 , B05D1/36 , B05D1/60 , B05D3/104 , H01L21/02271 , H01L21/02312 , H01L21/67109 , H01L21/67303 , H01L21/67757
Abstract: 내부에기판이반입되는성막용기; 상기성막용기내에반입되어있는상기기판을가열하는가열기구; 상기성막용기내에밀착촉진제가스를공급하는밀착촉진제공급기구; 및상기가열기구와상기밀착촉진제공급기구를제어하는제어부; 를갖는성막장치. 산이무수물로이루어지는제1 원료가스와디아민으로이루어지는제2 원료가스를상기성막용기내에공급하여, 상기기판에폴리이미드막을성막하는경우에, 상기폴리이미드막을성막하기위한소정온도까지, 상기기판이가열되기까지의동안에, 상기밀착촉진제가스를상기성막용기내에공급하여, 상기기판의표면을상기밀착촉진제가스로처리하도록, 제어부는, 상기밀착촉진제공급기구를제어한다.
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公开(公告)号：KR1020120109344A
公开(公告)日：2012-10-08
申请号：KR1020120029162
申请日：2012-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312
CPC classification number: H01L21/02118 , B05D1/36 , B05D1/60 , B05D3/104 , H01L21/02271 , H01L21/02312 , H01L21/67109 , H01L21/67303 , H01L21/67757
Abstract: PURPOSE: A film forming device is provided to increase the number of processed substrates per unit hour and improve the film quality of a polyimide film. CONSTITUTION: A film forming container receives a wafer(W). A heating device(62) heats a substrate carried in the film forming container. An adhesion accelerant supply mechanism(80) supplies adhesion accelerant gas into the film forming container. A cooling mechanism(65) includes an air blower(66), a blast pipe(67) and a vent pipe(68). A controller controls the heating mechanism and the adhesion accelerant supply mechanism.
Abstract translation: 目的：提供一种成膜装置，以增加每单位时间处理的基板的数量，并提高聚酰亚胺薄膜的薄膜质量。 构成：成膜容器接收晶片（W）。 加热装置（62）加热成膜容器中承载的基底。 粘合促进剂供给机构（80）将粘合促进剂气体供给到成膜容器中。 冷却机构（65）包括鼓风机（66），鼓风管（67）和排气管（68）。 控制器控制加热机构和附着促进剂供给机构。
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公开(公告)号：KR101654631B1
公开(公告)日：2016-09-06
申请号：KR1020130002791
申请日：2013-01-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/46 , C23C16/52
CPC classification number: G05B19/418 , H01L21/67109 , H01L21/67115 , H01L21/67248
Abstract: (과제) 소망하는열처리조건에따라서, 최적의온도특성을실현가능한, 열처리장치를제공하는것이다. (해결수단) 피(被)처리체를승온하거나또는정온(定溫)에서열처리하는열처리장치로서, 상기피처리체를수납하는처리실과, 상기처리실에수납된상기피처리체를가열하기위한가열부와, 미리작성된 2개또는그 이상의온도제어모델을기억하는기억부와, 상기가열부의온도를제어하는온도제어부와, 상기온도제어부및 상기기억부를제어하는장치제어부를갖고, 상기장치제어부는, 소망하는열처리조건에따라서, 상기 2개또는그 이상의온도제어모델로부터온도제어모델을선정하고, 상기온도제어부는, 상기의선정된온도제어모델을상기기억부로부터판독하여, 상기가열부를제어하는열처리장치.
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公开(公告)号：KR1020120109345A
公开(公告)日：2012-10-08
申请号：KR1020120029163
申请日：2012-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312
CPC classification number: H01L21/0271 , B05D1/60 , B05D1/62 , H01L21/02118 , H01L21/02247 , H01L21/02252 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/02315 , H01L21/306
Abstract: PURPOSE: Methods for processing a surface and forming a film are provided to uniformly form a polyimide film on the entire surface of a wafer by processing the surface of the wafer using a first source gas before forming the polyimide film. CONSTITUTION: A wafer is carried into a film forming container(S11). The film forming container does not include moisture(S12-1). The inside of the forming container is depressurized(S12-2). The temperature of the wafer is increased to the film forming temperature(S13). A polyimide film is formed(S14). The inside of the film forming container is purged(S15). The inside of the film forming container becomes the atmosphere pressure. The wafer is carried out from the film forming container(S17). [Reference numerals] (AA) Start; (BB) End; (S11) Carrying a wafer into a film forming container(carrying process); (S12-1) Generating atmosphere not including moisture; (S12-2) Depressurizing the inside of the film forming container(depressurizing process); (S13) Increasing the temperature of the wafer to the film forming temperature(recovery process); (S14) Forming a polyimide film(film forming process); (S15) Purging the inside of the film forming container(purge process); (S16) Returning the pressure of the inside of the film forming container to atmosphere(pressure returning process); (S17) Carrying out the wafer from the film forming container(carrying out process)
Abstract translation: 目的：提供用于处理表面和形成膜的方法，以在形成聚酰亚胺膜之前通过使用第一源气体处理晶片的表面在晶片的整个表面上均匀地形成聚酰亚胺膜。 构成：将晶片装入成膜容器（S11）中。 成膜容器不包含水分（S12-1）。 成形容器的内部被减压（S12-2）。 晶片的温度升高到成膜温度（S13）。 形成聚酰亚胺膜（S14）。 清洗成膜容器的内部（S15）。 成膜容器的内部成为大气压。 从成膜容器进行晶片（S17）。 （附图标记）（AA）开始; （BB）结束; （S11）将晶片装入成膜容器（承载工序）中; （S12-1）发生不含水分的气氛; （S12-2）对成膜容器的内部进行减压（减压处理）; （S13）将晶片的温度提高到成膜温度（恢复处理）; （S14）形成聚酰亚胺膜（成膜法）; （S15）清洗成膜容器的内部（清洗处理）; （S16）将成膜容器内部的压力返回大气（压力返回处理）; （S17）从成膜容器中进行晶片（进行工序）
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公开(公告)号：KR101571020B1
公开(公告)日：2015-11-23
申请号：KR1020120029163
申请日：2012-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312
CPC classification number: H01L21/0271 , B05D1/60 , B05D1/62 , H01L21/02118 , H01L21/02247 , H01L21/02252 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/02315 , H01L21/306
Abstract: 처리용기내의기판의표면을처리하는방법으로서, 상기처리용기내에물을포함하지않는분위기를생성하는공정및 상기물을포함하지않는분위기중에서, 상기처리용기내의상기기판을가열하고, 상기처리용기내에밀착촉진제가스를공급함으로써, 상기기판과상기밀착촉진제가스를반응시키는공정을갖는표면처리방법이다.
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Patent Agency Ranking
公开(公告)号：KR1020120113665A
公开(公告)日：2012-10-15
申请号：KR1020120033824
申请日：2012-04-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/22
CPC classification number: H01L21/67109 , H01L21/67248
Abstract: PURPOSE: A heat treatment apparatus and a heat treatment method are provided to control the output of a heating unit for temperature control by estimating the temperature of an object. CONSTITUTION: A heat treatment furnace(2) is supported by a base plate. An opening(7) is formed on the base plate to upwardly insert a treatment container(5). A manifold(8) is interposed to the lower side of the treatment container and the treatment container is supported by the base plate. A cover(9) is located on the lower side of the manifold to close a furnace opening(53) and is lifted by a lifting device(10). [Reference numerals] (34) Temperature estimating unit; (35) Control unit; (36) Heater output unit; (AA) Pump; (BB) Gas supply source
Abstract translation: 目的：提供热处理装置和热处理方法，通过估计物体的温度来控制用于温度控制的加热单元的输出。 构成：热处理炉（2）由基板支撑。 在基板上形成开口（7），以向上插入处理容器（5）。 歧管（8）插入处理容器的下侧，处理容器由基板支撑。 盖（9）位于歧管的下侧，以关闭炉开口（53）并由提升装置（10）提升。 （附图标记）（34）温度推定部; （35）控制单元; （36）加热器输出单元; （AA）泵; （BB）供气源
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公开(公告)号：KR101482039B1
公开(公告)日：2015-01-13
申请号：KR1020120033824
申请日：2012-04-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/22
CPC classification number: H01L21/67109 , H01L21/67248
Abstract: 웨이퍼의 로드시에 있어서, 웨이퍼 온도를 확실하게 추정하여 웨이퍼에 대하여 신속한 열처리를 행한다.
열처리 장치(1)는, 보트(12)에 보유지지(holding)된 웨이퍼(w)를 처리하는 처리 용기(5)와, 처리 용기(5)를 가열하는 히터(3)와, 히터(3)로의 출력을 제어하는 제어부(35)를 구비하고 있다. 히터(3)와 처리 용기(5)와의 사이에 제1 온도 센서가 설치되고, 처리 용기(5) 내에 제2 온도 센서가 설치되고, 보트(12)와 함께 처리 용기(5) 내에 출납되는 제3 온도 센서가 설치되어 있다. 이들 온도 센서는 온도 예측부(34)에 접속되고, 온도 예측부(34)는, 어느 2개의 온도 센서, 예를 들면 제2 온도 센서 및 제3 온도 센서를 선택하여, 선택된 온도 센서로부터의 검출 온도를 각각 T
1 , T
2 로 했을 때, T＝T
1 ×(1－α)＋T
2 ×α, α＞1에 의해 웨이퍼 온도 T를 구한다.-
公开(公告)号：KR1020130089586A
公开(公告)日：2013-08-12
申请号：KR1020130002791
申请日：2013-01-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/46 , C23C16/52
CPC classification number: G05B19/418 , H01L21/67109 , H01L21/67115 , H01L21/67248
Abstract: PURPOSE: A heat processing apparatus and a controlling method thereof are provided to prevent the overshoot of a temperature by including a step of selecting a temperature control model. CONSTITUTION: A processing chamber receives an object. A heating unit heats the object. A memory unit memorizes two or more temperature control models. A temperature control unit (36) controls the temperature of the heating unit. A device control unit (100) controls the temperature control unit and the memory unit. [Reference numerals] (111,121) Model memory unit; (112) Recipe memory unit; (115,125) I/O port; (118) Operating panel; (28) Pressure control unit; (AA) Mass flow controller
Abstract translation: 目的：提供一种热处理装置及其控制方法，用于通过包括选择温度控制模型的步骤来防止温度过冲。 构成：处理室接收物体。 加热单元加热物体。 存储单元记忆两个或多个温度控制模型。 温度控制单元（36）控制加热单元的温度。 设备控制单元（100）控制温度控制单元和存储器单元。 （附图标记）（111,121）型号存储单元; （112）配方存储单元; （115,125）I / O口; （118）操作面板; （28）压力控制单元; （AA）质量流量控制器
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9.发明公开열처리 장치, 온도 제어 시스템, 열처리 방법, 온도 제어 방법 및 그 열처리 방법 또는 그 온도 제어 방법을 실행시키기 위한 프로그램을 기록한 기록 매체 无效热处理装置，温度控制系统，热处理方法，温度控制方法以及用于执行热处理方法或温度控制方法的程序的非中间计算机可读介质
公开(公告)号：KR1020130029009A
公开(公告)日：2013-03-21
申请号：KR1020120094300
申请日：2012-08-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/22 , H01L21/02
CPC classification number: H01L21/67109 , C23C16/463 , C23C16/481 , H01L21/67248 , H01L21/67303 , H01L21/67757
Abstract: PURPOSE: A thermal treatment apparatus, a temperature control system, a thermal treatment method, a temperature control method, and a readable medium having a program for executing the thermal treatment method or the temperature control method are provided to save power consumption. CONSTITUTION: A substrate holding part(44) supports substrates at regular intervals. The substrates are arranged in a process chamber(65). A heating part(63) heats the process chamber. A feeding part(91) supplies gas. A cooling part(90) cools the process chamber.
Abstract translation: 目的：提供具有执行热处理方法或温度控制方法的程序的热处理装置，温度控制系统，热处理方法，温度控制方法和可读介质，以节省功耗。 构成：基板保持部（44）以规则的间隔支撑基板。 基板布置在处理室（65）中。 加热部件（63）加热处理室。 供给部（91）供给气体。 冷却部件（90）冷却处理室。
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公开(公告)号：KR101617217B1
公开(公告)日：2016-05-02
申请号：KR1020130002788
申请日：2013-01-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/46 , C23C16/52
CPC classification number: F27D19/00 , F27B17/0025 , F27D21/0014 , H01L21/67109 , H01L21/67248
Abstract: (과제) 외란에의해열처리장치내부의온도가바뀐경우에, 열처리장치내부의온도를신속하게리커버리시킬수 있는열처리장치를제공하는것이다. (해결수단) 피(被)처리체를수납하는처리실과, 상기처리실에수납된피처리체를가열하는가열부와, 상기처리실내의온도를검출하는온도검출부와, 상기온도검출부에의해검출된온도가, 외란에의해, 미리설정된제1 설정온도보다낮아진경우에, 상기온도검출부에의해검출된온도와동일한제2 설정온도를설정하고, 그리고, 상기제2 설정온도와상기제1 설정온도사이에있는제3 설정온도와, 상기온도검출부가검출한온도가동일해지도록상기가열부를제어하고, 그리고상기제3 설정온도와상기온도검출부가검출한온도가동일해진후에, 상기제1 설정온도와, 상기온도검출부가검출한온도가동일해지도록상기가열부를제어하는제어부를구비하는열처리장치.
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