公开(公告)号：KR101074441B1

公开(公告)日：2011-10-17

申请号：KR1020087003967

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다나카미치오 ,  시노즈카신이치 ,  다도코로마사히데 ,  오가타구니에 ,  도미타히로시 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/40 ,  G03F7/38

Abstract: 패턴형성장치(1)는현상처리후에기판(W)에형성된레지스트패턴의사이드월 앵글(SWA)을측정검사하는검사장치(400)와, 상기현상처리후의레지스트패턴의사이드월 앵글(SWA)의목표값과상기검사장치(400)에의한사이드월 앵글(SWA)의검사결과의차분에기초하여상기현상처리후의사이드월 앵글(SWA)이상기목표값에근사하도록, 상기제1 가열처리(71∼74) 또는상기제2 가열처리(84∼89)에서의처리조건의설정을행하는제어부(500)를구비한다.

公开(公告)号：KR1020080049018A

公开(公告)日：2008-06-03

申请号：KR1020087004066

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가타구니에 ,  도미타히로시 ,  다나카미치오 ,  우에무라료이치

IPC: G03F7/26 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/168 ,  G03F7/70616 ,  H01L21/67098

Abstract: Disclosed is a pattern-forming apparatus (1) for performing a sequence of processes including a first heat treatment for heating a substrate W to which a resist liquid has been applied, a exposure process for exposing the resist film into a predetermined pattern, a second heat treatment for expediting the chemical reaction in the resist film after exposure, a development process for developing the exposed resist film, and an etching process for removing an oxide film by using the resist pattern formed after the development process as a mask. This pattern-forming apparatus (1) comprises a test device (400) for measuring the state of the pattern formed after the etching process, and a control unit (500) for setting the conditions in the first heat treatment and/or the second heat treatment basing on the measurement results so that the in-plane states of the pattern of the substrate W after the etching process become uniform.

Abstract translation: 公开了一种图案形成装置（1），用于执行包括用于加热已经涂敷抗蚀剂液体的基板W的第一热处理，将抗蚀剂膜曝光成预定图案的曝光工序， 用于加速曝光后的抗蚀剂膜中的化学反应的热处理，用于显影曝光的抗蚀剂膜的显影处理以及通过使用在显影处理之后形成的抗蚀剂图案作为掩模去除氧化膜的蚀刻工艺。 该图案形成装置（1）包括用于测量在蚀刻处理之后形成的图案的状态的测试装置（400），以及用于设定第一热处理和/或第二热量中的条件的控制单元（500） 基于测量结果的处理，使得蚀刻工艺之后的衬底W的图案的面内状态变得均匀。

公开(公告)号：KR1020080049017A

公开(公告)日：2008-06-03

申请号：KR1020087003969

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가타구니에 ,  도미타히로시 ,  다나카미치오 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/67225 ,  G03F7/168 ,  G03F7/3071 ,  G03F7/40 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  G03F7/70616 ,  H01L21/67098 ,  H01L2924/00

Abstract: A pattern-forming apparatus (1) comprises a test device (400) for measuring the state of a resist pattern formed on a substrate W after development and outputting the first measurement result, and for measuring the state of a resist pattern formed on the substrate W after etching and outputting the second measurement result; a storage means (502) recorded with a correlation formula obtained from the first measurement result and the second measurement result; and a control unit (500) for setting the conditions in the first heat treatment and/or the second heat treatment basing on the difference between the target value of the pattern state after development and the first measurement result by obtaining the target value of the pattern state after development from the target value of the pattern state after etching based on the correlation formula.

Abstract translation: 图案形成装置（1）包括用于测量在显影后形成在基板W上的抗蚀剂图案的状态并输出第一测量结果的测试装置（400），并且用于测量形成在基板上的抗蚀剂图案的状态 W，并输出第二测量结果; 记录从第一测量结果和第二测量结果获得的相关公式的存储装置（502）; 以及控制单元（500），用于基于显影后的图案状态的目标值与第一测量结果之间的差异来设定第一热处理和/或第二热处理中的条件，通过获得图案的目标值 根据相关公式，从蚀刻后的图案状态的目标值开始后的状态。

公开(公告)号：KR1020080049016A

公开(公告)日：2008-06-03

申请号：KR1020087003967

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다나카미치오 ,  시노즈카신이치 ,  다도코로마사히데 ,  오가타구니에 ,  도미타히로시 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/40 ,  G03F7/38 ,  G03F7/3071 ,  G03F7/70616 ,  H01L21/67098 ,  H01L21/67225

Abstract: A pattern-forming apparatus (1) comprises a test device (400) for measuring the side wall angle SWA of a resist pattern which is formed on a substrate W after a development process, and a control unit (500) for setting the treatment conditions in the first heat treatment units (71-74) or the second heat treatment units (84-89) basing on the difference between the target value of the side wall angle SWA of the resist pattern after development process and the actual value of the side wall angle SWA measured by the test device (400) so that the side wall angle SWA after development approach the target value.

Abstract translation: 图案形成装置（1）包括用于测量在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA的测试装置（400）和用于设定处理条件的控制单元（500） 在第一热处理单元（71-74）或第二热处理单元（84-89）中，基于显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与侧面的实际值之差 通过测试装置（400）测量的壁角度SWA，使得开发后的侧壁角度SWA接近目标值。

公开(公告)号：KR1020020025732A

公开(公告)日：2002-04-04

申请号：KR1020010059540

申请日：2001-09-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가타구니에 ,  니시무코고키 ,  도미타히로시 ,  기무라요시오 ,  우에무라료이치 ,  다나카미치오

IPC: H01L21/027

CPC classification number: H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

Abstract: PURPOSE: Provided are a method and an apparatus for forming a resist pattern in which amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed. CONSTITUTION: A controller(7) having a controlling portion controls a processing of a coating and developing apparatus(100) with a coating unit(3A) and a developing unit(3B). An inspecting portion(A2) and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller(7). At the controller(7), a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed.

Abstract translation: 目的：提供一种用于形成抗蚀剂图案的方法和装置，其中通过减少操作者的工作量来促进修改操作，并且同时可以进行适当的修改。 构成：具有控制部分的控制器（7）通过涂覆单元（3A）和显影单元（3B）来控制涂覆和显影设备（100）的处理。 检查部（A2）等测量从基膜和抗蚀剂膜的反射率和膜厚选择的多个测量项目中的至少一个，显影后的线宽度，基底 电影与抗蚀剂图案匹配，发展后的缺陷等。 测量数据被传送到控制器（7）。 在控制器（7）中，根据测量项目的各个对象的数据（例如抗蚀剂的膜厚度和开发后的线宽度）来选择修改参数，修改参数 执行修正。