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12.发明公开
公开(公告)号：KR1020150130829A
公开(公告)日：2015-11-24
申请号：KR1020140057952
申请日：2014-05-14
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/0336 , H01L27/14601 , H01L27/14643 , H01L31/0352 , H01L31/035281 , H01L31/03529 , H01L31/105 , H01L31/18 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
Abstract: 개시된수평형포토다이오드는기판; 상기기판상에형성된절연마스크층; 상기절연마스크층의일면에접촉하며, 상기일면과나란한방향을따라순차배치된제1형반도체층, 활성층, 제2형반도체층;을포함한다. 상기절연마스크층은관통홀이구비되어, 상기제1형반도체층, 활성층, 제2형반도체층이상기관통홀로부터측면과성장법에의해형성된다.
Abstract translation: 所公开的横向型光电二极管包括：基板; 形成在所述基板上的绝缘掩模层; 以及与所述绝缘掩模层的一个表面接触并顺序地与所述一个表面平行的方向排列的第一类型半导体层，有源层和第二类型半导体层。 绝缘掩模层安装在穿透孔中。 第一类型半导体层，有源层和第二类型半导体层由横向过度生长法由穿透孔形成。
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公开(公告)号：KR1020140128792A
公开(公告)日：2014-11-06
申请号：KR1020130047697
申请日：2013-04-29
Applicant: 삼성전자주식회사
IPC: G01J5/20
CPC classification number: G01J5/00 , G01J5/08 , G01J5/0818 , G01J5/0837 , G01J5/0853 , G01J5/44 , G01J2005/0077
Abstract: 열 복사 센서 및 이를 포함한 열상 촬영 장치가 개시된다.
개시된 열 복사 센서는 열 흡수층과, 상기 열 흡수층 둘레에 구비된 광 공진기와, 열 흡수층 상의 플라즈모닉 흡수체를 포함하여, 민감도가 높으면서 소형화될 수 있다.Abstract translation: 本发明涉及一种热辐射传感器和一种温谱图摄影装置。 根据本发明实施例的热辐射传感器包括吸热层，在吸热层周围形成的光谐振器和吸热层上的等离子体吸收体。 本发明的实施例提供了具有高灵敏度的散热传感器，能够通过提高灵敏度来精确地感测热量。
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14.发明公开
公开(公告)号：KR1020140045842A
公开(公告)日：2014-04-17
申请号：KR1020120112091
申请日：2012-10-09
Applicant: 삼성전자주식회사
CPC classification number: G01J5/20 , G01J3/36 , G01J3/42 , G01J2005/202
Abstract: A disclosed electromagnet wave spectrum analyzer includes a plurality of resonance structures having mutually different resonance frequencies; a plurality of thermal image legs made of a thermal variable resistance material of which electric resistance is changed by thermal energy of an electromagnet wave absorbed in the resonance structures; a substrate having a circuit element for detecting resistance variations of each thermal image leg; and a signal processing unit for analyzing a spectrum of an electromagnetic wave input by the resistance variation. [Reference numerals] (180) Signal processing unit
Abstract translation: 所公开的电磁波频谱分析仪包括具有相互不同谐振频率的多个谐振结构; 由耐热可变电阻材料制成的多个热像腿，其电阻由在谐振结构中吸收的电磁波的热能而改变; 具有用于检测每个热图像腿的电阻变化的电路元件的衬底; 以及信号处理单元，用于分析由电阻变化输入的电磁波的频谱。 （附图标记）（180）信号处理单元
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公开(公告)号：KR1020130050710A
公开(公告)日：2013-05-16
申请号：KR1020110115922
申请日：2011-11-08
Applicant: 삼성전자주식회사
CPC classification number: G01J5/12 , B81B2201/0207 , G01J5/024 , G01J5/0285 , G01J5/045 , G01J5/046 , G01J5/06 , G01J5/0853
Abstract: PURPOSE: An infrared detector is provided to increase the temperature of an absorbing body effectively by the generation of heat caused by absorbing infrared rays. CONSTITUTION: An infrared detector(10) comprises a substrate(11), a resonator(30), a thermoelectric material layer(50), a lead line(60), a thermal isolation layer(70), and a ground plate layer(90). The resonator absorbs infrared rays becoming incident. The thermoelectric material layer is in contact to the resonator, and a resistance value of the thermoelectric material layer is varied according to a temperature change caused by the absorbed infrared rays. The lead line electrically connects the thermoelectric material layer and the substrate. The thermal isolation layer is arranged between the substrate and the thermoelectric material layer, thereby preventing thermal transmission to the substrate. The ground plate layer prevents the infrared rays toward the substrate.
Abstract translation: 目的：提供红外检测器，通过吸收红外线产生的热量有效地增加吸收体的温度。 构成：红外检测器（10）包括衬底（11），谐振器（30），热电材料层（50），引线（60），热隔离层（70）和接地板层 90）。 谐振器吸收红外线入射。 热电材料层与谐振器接触，并且热电材料层的电阻值根据由吸收的红外线引起的温度变化而变化。 引线将热电材料层和基板电连接。 热隔离层设置在基板和热电材料层之间，从而防止热传递到基板。 接地板层防止红外线朝向基板。
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Patent Agency Ranking
公开(公告)号：KR101238360B1
公开(公告)日：2013-03-04
申请号：KR1020060077224
申请日：2006-08-16
Applicant: 삼성전자주식회사
IPC: H03H9/15
CPC classification number: H03H3/02 , H03H9/02118 , H03H9/173 , H03H2003/021
Abstract: 본 발명의 공진기는, 기판, 및 기판상에 차례로 적층된 제1전극, 압전막 및 제2전극을 구비하고, 공진을 발생하는 활성영역과 공진을 발생하지 않은 비활성영역으로 구분된 공진부를 포함하며, 제1 및 제2전극 중 적어도 하나는 비활성영역 부분의 적어도 일부가 비활성영역 부분과 다른 두께를 가지도록 형성된 것을 특징으로 한다.
FBAR, 공진부, 전극, 비활성영역, 금속막-
公开(公告)号：KR100802109B1
公开(公告)日：2008-02-11
申请号：KR1020060088285
申请日：2006-09-12
Applicant: 삼성전자주식회사
CPC classification number: H03H9/173 , H03H3/02 , H03H9/131 , H03H9/564 , H03H2003/021 , H03H2003/0471
Abstract: A resonator, an apparatus having the same, and a method for manufacturing the resonator are provided to improve a roll off characteristic of an electronic component by freely adjusting an effective piezoelectric thin film coefficient in a wide range. A resonator includes a substrate(110), a resonating unit(135), and first and second electrode layers(141,142). The resonating unit includes a lower electrode, a piezoelectric film, and an upper electrode which are sequentially laminated on the substrate. The first and second electrode layers are made of the same material with differential crystalline properties, so that a resonance piezoelectric thin film coefficient is adjusted. One of grain sizes or surface roughness properties is different in the first and second electrode layers.
Abstract translation: 提供一种谐振器，具有该谐振器的装置及其制造方法，用于通过在宽范围内自由调节有效的压电薄膜系数来提高电子部件的滚降特性。 谐振器包括基板（110），谐振单元（135）以及第一和第二电极层（141,142）。 谐振单元包括依次层压在基板上的下电极，压电膜和上电极。 第一和第二电极层由具有差分晶体性质的相同材料制成，从而调节谐振压电薄膜系数。 晶粒尺寸或表面粗糙度特性之一在第一和第二电极层中是不同的。
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公开(公告)号：KR100683866B1
公开(公告)日：2007-02-15
申请号：KR1020040101068
申请日：2004-12-03
Applicant: 삼성전자주식회사
IPC: H01L27/02
CPC classification number: H01L23/5227 , H01F17/0006 , H01F41/041 , H01F2017/0046 , H01L21/764 , H01L27/08 , H01L2924/0002 , H01L2924/00
Abstract: 감광성 필름 및 공동(空洞)을 이용하여 제조된 인덕터 및 그 제조방법이 개시된다. 본 발명에 따르면, 상부전극, 절연층 및 하부전극의 구조에 의한 기생용량의 발생을 최소화하고 기판에서의 와전류에 의한 에너지 손실을 최소화하기 위하여 기판상에 공동(cavity)을 두고, 공동의 생성 및 평탄화하는 공정을 단순화하고 공동을 충분히 깊게 형성할 수 있다. 이에 의하여, 높은 품질계수와 자기공진주파수를 가지는 인덕터를 제조할 수 있으며, 공동의 형성 및 평탄화를 단순화한 제조기법을 제시한다.
인덕터, 스파이어럴, spiral, 공동, cavity, 감광성 필름, DFR, Dry Film Resist-
公开(公告)号：KR1020040102661A
公开(公告)日：2004-12-08
申请号：KR1020030034191
申请日：2003-05-28
Applicant: 삼성전자주식회사
IPC: H01L27/01
Abstract: PURPOSE: A magnetic field detection device and a manufacturing method thereof are provided to improve planarization property by forming a first coil in a well without protruding to a semiconductor substrate and to simplify etching process by using a planarized insulating layer with thin thickness. CONSTITUTION: A semiconductor substrate(10) is prepared. A well(11) is formed in the substrate. A first coil(50) composed of a plural coil lines(51,52) is formed in the well without protruding to the substrate. A first planarized insulating layer(30) is formed on the resultant substrate containing the well. A soft magnetic core(20) is formed on the first planarized insulating layer. A second planarized insulating layer(40) is formed on the first planarized insulating layer containing the soft magnetic core. A second coil(60) is formed on the second planarized insulating layer corresponding to the first coil.
Abstract translation: 目的：提供磁场检测装置及其制造方法，以通过在阱中形成第一线圈而不突出到半导体衬底来提高平坦化性能，并且通过使用具有薄厚度的平坦化绝缘层来简化蚀刻工艺。 构成：制备半导体衬底（10）。 在衬底中形成阱（11）。 在井中形成由多个线圈线（51,52）组成的第一线圈（50），而不突出到基板。 在包含该阱的所得衬底上形成第一平坦化绝缘层（30）。 软磁芯（20）形成在第一平坦化绝缘层上。 在包含软磁芯的第一平坦化绝缘层上形成第二平坦化绝缘层（40）。 在对应于第一线圈的第二平坦化绝缘层上形成第二线圈（60）。
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公开(公告)号：KR1020040055016A
公开(公告)日：2004-06-26
申请号：KR1020020081580
申请日：2002-12-20
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: H01L21/76879
Abstract: PURPOSE: A method for manufacturing a metal structure using a trench is provided to be capable of simplifying the manufacturing process and easily carrying out a post process. CONSTITUTION: A plurality of trenches are formed in a substrate(100). A seed layer(102) is deposited along the upper surface of the resultant structure. An insulating layer(103) is deposited on the seed layer. The insulating layer on the trenches is partially removed to expose the seed layer. The trenches are then filled with a metal layer(104). The insulating layer and the seed layer are removed from the resultant structure. Preferably, the insulating layer formed at the bottom of the trench is removed for obtaining a metal structure.
Abstract translation: 目的：提供一种使用沟槽制造金属结构的方法，能够简化制造过程并容易进行后期处理。 构成：在衬底（100）中形成多个沟槽。 种子层（102）沿所得结构的上表面沉积。 在种子层上沉积绝缘层（103）。 部分去除沟槽上的绝缘层以暴露种子层。 然后用金属层（104）填充沟槽。 从所得结构中除去绝缘层和种子层。 优选地，形成在沟槽底部的绝缘层被去除以获得金属结构。
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