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公开(公告)号：KR1020140118555A
公开(公告)日：2014-10-08
申请号：KR1020130034700
申请日：2013-03-29
Applicant: 삼성전자주식회사
Abstract: A memory system and a method to adjust access performance thereof are disclosed. The method to adjust access performance of the memory system comprises: a step of determining a read parameter value about a storage area performing read operation based on a reliability information by the storage areas of a memory device; a step of performing the read operation by applying the determined read parameter value; and a step of updating the reliability information by the storage areas of the memory device based on the quality of data read by the performance of the read operation.
Abstract translation: 公开了一种存储系统和调整其访问性能的方法。 调整存储器系统的访问性能的方法包括：基于存储器件的存储区域的可靠性信息来确定关于执行读取操作的存储区域的读取参数值的步骤; 通过应用所确定的读取参数值来执行读取操作的步骤; 以及基于通过执行读取操作读取的数据的质量来更新存储器件的存储区域的可靠性信息的步骤。
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公开(公告)号：KR1020100114305A
公开(公告)日：2010-10-25
申请号：KR1020090032771
申请日：2009-04-15
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7201
Abstract: PURPOSE: A data storage device and a data storage system including thereof are provided to reduce the number of merge operation by expanding data block of a flash memory. CONSTITUTION: A flash memory(110) comprises plural data blocks. An FTL(Flash Translation Layer)(120) classifies the data blocks into a first and a second group data blocks(111, 113). According to the decision result of the data signal inputted from outside, the FTL records the data signal in the first group data block or the second group data block expanded from the first group data block. The FTL comprises a data determining unit, a state judgment unit, an expansion selecting unit, and a link control unit.
Abstract translation: 目的：提供数据存储装置及其数据存储系统，以通过扩展闪存的数据块来减少合并操作次数。 构成：闪存（110）包括多个数据块。 FTL（闪存转换层）（120）将数据块分类为第一和第二组数据块（111,113）。 根据从外部输入的数据信号的判定结果，FTL将数据信号记录在从第一组数据块扩展的第一组数据块或第二组数据块中。 FTL包括数据确定单元，状态判断单元，扩展选择单元和链路控制单元。
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公开(公告)号：KR1020090034087A
公开(公告)日：2009-04-07
申请号：KR1020070099250
申请日：2007-10-02
Applicant: 삼성전자주식회사
CPC classification number: G06F9/4401
Abstract: A method for reproducing media contents by using a non-volatile storage medium and an apparatus thereof are provided to limitedly apply power to devices necessary for reproducing media contents and reproduce the media contents by using a non-volatile cache memory and an on board cache memory inside a hybrid hard disk, thereby realizing quick booting and low power consumption. A power unit(620) supplies power to devices necessary for reproducing media contents. A reading unit(630) reads a boot code stored in a non-volatile storage medium(660) among the devices to which power is supplied. A reproducing unit(650) reproduces the media content stored in the non-volatile storage medium based on the read boot code. A mode selection unit(610) selects a normal mode or a media mode for media contents playback. An interface program executor(640) performs an interface program. The interface program controls data input-output with a media contents player.
Abstract translation: 提供了通过使用非易失性存储介质再现媒体内容的方法及其装置，以有限地对再现媒体内容所需的设备施加功率，并且通过使用非易失性高速缓冲存储器和板上高速缓冲存储器再现媒体内容 在混合硬盘内，从而实现快速启动和低功耗。 电力单元（620）为再现媒体内容所需的设备供电。 读取单元（630）读取存储在提供电力的设备中的非易失性存储介质（660）中的引导代码。 再现单元（650）基于读取的引导代码再现存储在非易失性存储介质中的媒体内容。 模式选择单元（610）选择用于媒体内容重放的普通模式或媒体模式。 接口程序执行器（640）执行接口程序。 接口程序用媒体内容播放器控制数据输入输出。
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公开(公告)号：KR100303438B1
公开(公告)日：2001-11-30
申请号：KR1019940012841
申请日：1994-06-08
Applicant: 삼성전자주식회사
IPC: H01L21/76
Abstract: PURPOSE: A method for isolating device is provided to minimize a stress due to bird's beak by forming a field oxide using an over-etch in forming sidewalls. CONSTITUTION: After sequentially depositing a pad oxide(22) and a nitride layer(23) on a substrate(21), the nitride layer(23) is patterned by a photo-etching and the exposed pad oxide(22) is then removed. At this time, cavities(24) are resulted from the pad oxide(22) removal step. A thin oxide(25) is formed on the entire exposed area of the substrate(21). Then, a poly-crystalline silicon layer(26) is deposited on the entire surface of the resultant structure. Poly-crystalline silicon sidewalls(27) are formed on both sidewalls of the nitride layer(23) by etching the poly-crystalline silicon layer(26). The cavities(24) are filled with the poly-crystalline silicon layer(26). The poly-crystalline silicon sidewalls(27) have a less thickness than the nitride layer(23) using an over-etch. At this time, a stress due to bird's beak is minimized.
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Patent Agency Ranking
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公开(公告)号：KR1020170136257A
公开(公告)日：2017-12-11
申请号：KR1020160068109
申请日：2016-06-01
Applicant: 삼성전자주식회사
CPC classification number: G06F3/0652 , G06F3/0608 , G06F3/0616 , G06F3/064 , G06F3/0679 , G06F12/02
Abstract: 빠른재사용메모리블록검출방법및 이를이용한메모리블록관리방법에관하여개시한다. 빠른재사용메모리블록검출방법은불휘발성메모리장치에포함된메모리블록들중에서초기설정된주기로임의의메모리블록을기준블록으로선택하는단계, 상기기준블록의소거시간및 프로그램시간중의어느하나를관리하는단계및, 상기기준블록의소거시간및 프로그램시간중의어느하나에따른사용주기에기초하여다른메모리블록들에대한빠른재사용여부를판정하는단계를포함한다.
Abstract translation: 公开了一种快速重用存储器块检测方法和使用其的存储器块管理方法。 快速重新使用存储器块检测方法，包括以下步骤：管理与擦除时间的任何一项所述的存储器块，包括的节目时间：初始化为选择任何基于块从包括在非易失性存储装置块中的参考之间的存储块的周期，并 并且根据参考块的擦除时间和编程时间中的任何一个，基于使用时段确定存储块是否比其他存储块更快地被重用。
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20.发明公开
公开(公告)号：KR1020170024224A
公开(公告)日：2017-03-07
申请号：KR1020150118995
申请日：2015-08-24
Applicant: 삼성전자주식회사
CPC classification number: G11C16/04 , G06F3/0616 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/00
Abstract: 본발명의실시예에따른플래시메모리를포함하는저장장치의동작방법은, 상기플래시메모리의선택된메모리블록의재사용주기(reuse period)를계산하는단계, 상기선택된메모리블록의재사용주기에근거하여사용자데이터를쓰기위한워드라인을결정하는단계, 및상기결정된워드라인에사용자데이터를쓰는단계를포함한다. 여기에서, 상기사용자데이터를쓰지않는워드라인에더미데이터를쓴다.
Abstract translation: 实施例包括操作包括闪速存储器的存储设备的方法，包括：计算闪速存储器中所选存储块的重用周期; 基于所选择的存储块的重用周期，确定用于写入数据的所选存储块的一组字线; 并将数据写入一组字线。
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