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公开(公告)号：KR1020130028487A
公开(公告)日：2013-03-19
申请号：KR1020110092084
申请日：2011-09-09
Applicant: 삼성전자주식회사
CPC classification number: H01L23/08 , H01L33/505 , H01L2224/16145 , H01L2224/48091 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: A case including semiconductor nanocrystal and an optoelectronic device including the same are provided to improve stability and reliability. CONSTITUTION: A semiconductor nanocrystal(12) and a matrix(14) are formed in a case(18). Sealant(20) encapsulates the opening part of the case. The sealant has the tensile strength of 5 MPa or over and the tensile modulus of 0.7 Gpa or over.
Abstract translation: 目的：提供包括半导体纳米晶体和包括其的光电子器件的情况以提高稳定性和可靠性。 构成：在壳体（18）中形成半导体纳米晶体（12）和基体（14）。 密封剂（20）封装壳体的开口部分。 密封剂的拉伸强度为5MPa以上，拉伸模量为0.7Gpa以上。
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公开(公告)号：KR1020110140049A
公开(公告)日：2011-12-30
申请号：KR1020100060233
申请日：2010-06-24
Applicant: 삼성전자주식회사
IPC: H01L21/02 , H01L51/50 , C01G9/00 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H01L27/32 , H05B33/14 , B82Y30/00 , B82Y40/00
CPC classification number: H01L21/02601 , B82Y30/00 , B82Y40/00 , C01G9/006 , C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , H01L21/024 , H01L21/02409 , H01L21/02455 , H01L21/02461 , H01L21/02538 , H01L21/02551 , H01L21/02557 , H01L21/02628 , H01L27/322 , H01L33/502 , H01L51/502 , H05B33/14
Abstract: PURPOSE: A semiconductor nanocrystal is provided to make the size distribution of a nano-crystalline uniform by improving the reactivity of the semiconductor nanocrystal. CONSTITUTION: In a semiconductor nanocrystal, a first layer comprises the znSe, znTe, znS, znO or their mixture The first layer comprises core and III-V group of a semiconductor The emitting wavelength of the core is 405~530nm. The III-V group of the semiconductor surrounds the core. The half teeth of the core is 10-30nm. The luminous efficiency of the core is more than 20%.
Abstract translation: 目的：提供半导体纳米晶体，通过提高半导体纳米晶体的反应性，使纳米晶粒尺寸分布均匀。 构成：在半导体纳米晶体中，第一层包含znSe，znTe，znS，znO或它们的混合物第一层包含半导体的核心和III-V族核心的发射波长为405〜530nm。 半导体的III-V组围绕着核心。 芯的半齿为10-30nm。 核心发光效率超过20％。
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13.发明公开
公开(公告)号：KR1020110005177A
公开(公告)日：2011-01-17
申请号：KR1020090062752
申请日：2009-07-09
Applicant: 삼성전자주식회사
IPC: C09K11/06
CPC classification number: H05B33/10 , H01L51/5253 , C09K11/06 , C07D307/78 , C07D471/04 , C07F13/00 , H01L51/50 , H05B33/14
Abstract: PURPOSE: A light emitting body-polymer composite composition is provided to prevent the inflow of moisture or oxygen from the outside with high light transmission. CONSTITUTION: A light emitting body-polymer composite composition comprises an electroluminescent material and a crosslinkable compound including a monomer represented by chemical formula 1. In chemical formula 1, Ar1 is substituted or unsubstituted C6-C20 arylene group; and R1-R4 are respectively substituted or unsubstituted C1-C20 alkyl group, C3-C20 cycloalkyl group, C1-C20 heterocycloalkyl group, C2-C16 alkynyl group, substituted or unsubstituted C6-C20 aryl group, substituted or unsubstituted C1-C20 alkoxy group, C7-C13 arylalkyl group, C1-C4 oxyalkyl group, C1-C20 heteroalkyl group, and C3-C20 heteroarylalkyl group.
Abstract translation: 目的：提供发光体 - 聚合物复合组合物，以防止水分或氧气从外部流入高透光性。 构成：发光体 - 聚合物复合组合物包含电致发光材料和包含由化学式1表示的单体的可交联化合物。在化学式1中，Ar 1是取代或未取代的C 6 -C 20亚芳基; 和R 1 -R 4分别是取代或未取代的C 1 -C 20烷基，C 3 -C 20环烷基，C 1 -C 20杂环烷基，C 2 -C 16炔基，取代或未取代的C 6 -C 20芳基，取代或未取代的C 1 -C 20烷氧基 C7-C13芳烷基，C1-C4烷氧基，C1-C20杂烷基和C3-C20杂芳基烷基。
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公开(公告)号：KR1020110004775A
公开(公告)日：2011-01-14
申请号：KR1020100055436
申请日：2010-06-11
Applicant: 삼성전자주식회사
CPC classification number: C09K11/025 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/703 , H01L29/0665 , H01L29/0673 , H01L33/502 , H01L51/0092 , H01L51/502 , H01L51/5056 , H01L51/5072 , Y10S977/774 , Y10S977/892 , Y10S977/896 , Y10S977/95
Abstract: PURPOSE: A method for preparing a semiconductor nanocrystal is provided to enhance quantum efficiency of semiconductor nanocrystals by passivating bare semiconductor nanocrystals by water molecules. CONSTITUTION: A semiconductor nanocrystal includes bare semiconductor nanocrystals and water molecules which are directly bonded to the semiconductor nanocrystals. The water molecules are covalent-bonded to the semiconductor nanocrystals. An organic ligand is further bonded to the bare semiconductor nanocrystals. The bare semiconductor nanocrystals have a core or core/shell structure.
Abstract translation: 目的：制备半导体纳米晶体的方法是通过水分子钝化裸半导体纳米晶体来提高半导体纳米晶体的量子效率。 构成：半导体纳米晶体包括直接与半导体纳米晶体结合的裸半导体纳米晶体和水分子。 水分子与半导体纳米晶体共价结合。 有机配体进一步键合到裸半导体纳米晶体。 裸半导体纳米晶体具有核或核/壳结构。
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公开(公告)号：KR1020100071700A
公开(公告)日：2010-06-29
申请号：KR1020080130506
申请日：2008-12-19
Applicant: 삼성전자주식회사
CPC classification number: H05B33/14 , C09K11/025 , C09K11/70 , H01L33/502 , H01L51/502 , Y10T428/2982 , Y10T428/2991
Abstract: PURPOSE: A semiconductor nano crystal and a method for manufacturing the same are provided to control reaction speed of group V and III atoms. CONSTITUTION: A semiconductor nano crystal contains group III-V semiconductor core and a transition metal which is alloyed to group III-V semiconductor core. The mole ratio of group III atom of a core and transition metal is 10:1-100:1. The mole ratio of group III atom and group V atom of core is 1:1-3:1. A method for manufacturing the semiconductor nano crystal comprises: a step of mixing organic solvent, surfactant, group III atom precursor and transition metal precursor to produce a first mixture; a step of heating the first mixture; and a step of injecting group V atom precursor.
Abstract translation: 目的：提供半导体纳米晶体及其制造方法，以控制V族和III族原子的反应速度。 构成：半导体纳米晶体含有III-V族半导体芯和与III-V族III族半导体芯合金的过渡金属。 核心和过渡金属的III族原子的摩尔比为10：1-100：1。 核心的III族原子和V族原子的摩尔比为1：1-3：1。 制造半导体纳米晶体的方法包括：混合有机溶剂，表面活性剂，III族原子前体和过渡金属前体以产生第一混合物的步骤; 加热第一混合物的步骤; 和注入V族原子前体的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020100071515A
公开(公告)日：2010-06-29
申请号：KR1020080130255
申请日：2008-12-19
Applicant: 삼성전자주식회사
CPC classification number: B82Y30/00 , Y10T428/2991 , Y10T428/31678
Abstract: PURPOSE: A semiconductor nanocrystal composite is provided to prevent degradation of nanocrystal by radical and to improve stability and lifetime. CONSTITUTION: A semiconductor nanocrystal composite contains semiconductor nanocrystal(1), matrix material(3), and radical scavenger(2). The radical scavenger exists between the semiconductor nanocrystal and matrix material. The radical scavenger surrounds the semiconductor nanocrystal and is coated partial or entire surface of semiconductor nanocrystal. The radical scavenger is selected from the group consisting piperidine compounds, hydroxyl amine compounds, lactone compounds, benzophenone compounds, and benzotriazole compounds.
Abstract translation: 目的：提供半导体纳米晶体复合材料，以防止自由基对纳米晶体的退化，并提高稳定性和寿命。 构成：半导体纳米晶体复合材料含有半导体纳米晶体（1），基质材料（3）和自由基清除剂（2）。 自由基清除剂存在于半导体纳米晶体和基质材料之间。 自由基清除剂围绕半导体纳米晶体并且被涂覆半导体纳米晶体的部分或全部表面。 自由基清除剂选自哌啶化合物，羟胺化合物，内酯化合物，二苯甲酮化合物和苯并三唑化合物。
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公开(公告)号：KR100905713B1
公开(公告)日：2009-07-01
申请号：KR1020070012369
申请日：2007-02-06
Applicant: 삼성전자주식회사
CPC classification number: G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
Abstract: 나노결정을 이용한 정보저장매체 및 그 제조방법과, 정보저장장치가 개시된다. 개시된 정보저장매체는 도전층; 도전층 상에 형성되는 하부 절연층; 하부 절연층 상에 형성되는 것으로, 전하를 트랩(trap)할 수 있는 도전성의 나노결정들(nanocrystals)을 포함하는 나노결정층(nanocrystal layer); 및 나노결정층 상에 형성되는 상부 절연층;을 포함한다.
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公开(公告)号：KR1020080093539A
公开(公告)日：2008-10-22
申请号：KR1020070037385
申请日：2007-04-17
Applicant: 삼성전자주식회사
CPC classification number: C01B19/007 , B82Y30/00 , C01B25/08 , C01B25/082 , C01G11/02 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , Y10T428/2982
Abstract: A method for preparing metal phosphide nanocrystals is provided to produce nanoparticles having uniform size, to obtain a desired crystal structure selectively, and to produce the metal phosphide nanocrystals having various controlled shapes. A method for preparing metal phosphide nanocrystals by a chemical wet synthesis method includes a step of reacting a metal precursor with a phosphite compound in a solvent to prepare the metal phosphide nanocrystals. A passivation method of a nanocrystal core has a step of adding the metal precursor and phosphite compound to a nanocrystal core-containing solution, and reacting the admixture to grow the metal phosphide layer on the surface of the nanocrystal core. Further, the metal precursor is an organic metal compound or a salts thereof selected from Zn, Cd, Gg, Pb, Sn, Ge, Ga, In, Tl, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Tc, Pd, Ag, Pt and Au.
Abstract translation: 提供了一种制备金属磷化物纳米晶体的方法以制备具有均匀尺寸的纳米颗粒，以获得期望的晶体结构选择性，并制备具有各种受控形状的金属磷化物纳米晶体。 通过化学湿式合成法制备金属磷化物纳米晶体的方法包括使金属前体与亚磷酸酯化合物在溶剂中反应以制备金属磷化物纳米晶体的步骤。 纳米晶核的钝化方法具有将金属前体和亚磷酸酯化合物加入到含纳米晶核的溶液中的步骤，并使该混合物在纳米晶核的表面上生长金属磷化物层。 此外，金属前体是选自Zn，Cd，Gg，Pb，Sn，Ge，Ga，In，Tl，Sc，Ti，V，Cr，Mn，Fe，Co，Ni中的有机金属化合物或其盐， Cu，Y，Zr，Nb，Mo，Tc，Pd，Ag，Pt和Au。
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公开(公告)号：KR100851982B1
公开(公告)日：2008-08-12
申请号：KR1020070018521
申请日：2007-02-23
Applicant: 삼성전자주식회사
IPC: H01L27/105 , B82Y10/00
CPC classification number: G11B9/02
Abstract: A ferroelectric information storage media and a method for manufacturing the same are provided to enhance magnetic information characteristics by reducing stress within a nano-dot crystal. A ferroelectric information storage media includes a substrate(10), a lower electrode(20) formed on the substrate, and a plurality of ferroelectric nano-dots(32) formed on the lower electrode. The ferroelectric nano-dots are isolated from each other to form one bit region. A size of each of the ferroelectric nano-dots is less than 15 nm. A ferroelectric nano-dots layer including the ferroelectric nano-dots is formed on the lower electrode. The ferroelectric nano-dots are made of one of ferroelectric materials including PbTiO3, KNbO3, and BiFeO3.
Abstract translation: 提供铁电信息存储介质及其制造方法，以通过减小纳米点晶体内的应力来增强磁信息特性。 铁电信息存储介质包括基板（10），形成在基板上的下电极（20）和形成在下电极上的多个铁电纳米点（32）。 铁电纳米点彼此隔离以形成一个位区域。 每个铁电纳米点的尺寸小于15nm。 在下电极上形成包含铁电纳米点的铁电纳米点层。 铁电纳米点由包括PbTiO 3，KNbO 3和BiFeO 3的铁电材料之一制成。
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公开(公告)号：KR100661696B1
公开(公告)日：2006-12-26
申请号：KR1020050114068
申请日：2005-11-28
Applicant: 삼성전자주식회사
CPC classification number: C30B7/00 , C30B29/40 , C30B29/46 , C30B29/48 , C30B29/605 , Y10S977/718 , Y10S977/768 , Y10S977/773 , Y10S977/784 , Y10S977/79 , Y10S977/827
Abstract: 본 발명은 반도체 나노결정 씨드(seed)의 표면으로부터 선택적인 방향에 물질 조성이 다른 반도체 나노결정을 와이어 형태로 성장시킨 이종 구조(heterostructure)의 반도체 나노 와이어 및 그의 제조방법에 관한 것이다.
본 발명에 의하면, 나노 와이어의 성장이 나노 결정 씨드에 의해 개시되므로, 나노 결정 씨드의 종류, 형태 및 크기를 조절함으로써 나노 와이어의 직경을 조절할 수 있고, 전기 광학적 특성이 조절된 와이어를 습식 공정으로 제조할 수 있다.
반도체 나노 결정, 씨드, 이종 구조 반도체 나노 와이어, 습식 공정
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