公开(公告)号：KR101654048B1

公开(公告)日：2016-09-05

申请号：KR1020090082645

申请日：2009-09-02

Applicant: 삼성전자주식회사

Inventor： 김형희 ,  강율 ,  문성호 ,  오석환 ,  한소라 ,  최성운

IPC: H01L21/027 ,  H01L21/308

CPC classification number: H01L21/28123 ,  H01L21/76229 ,  H01L27/11526 ,  H01L27/11529

Abstract: 산의확산성질을이용유기막질간용해도가차이나는막을형성하고이를이용하여더블패턴닝마스크를만들어반도체소자의미세패턴형성하는방법을제공한다. 반도체기판상에다수의제 1 마스크패턴을형성하고, 상기다수의제 1 마스크패턴상에산을포함하는결합캡핑층을형성하고, 상기결합캡핑층에산을재제공하는산 수용액을제공하여결합캡핑층에산을재공급하고, 상기제 1 마스크패턴사이사이에제 2 마스크층을형성하고, 용해도차를이용상기산이재공급된결합캡핑층을제거제 2 마스크패턴을형성하고, 상기제 1 및제 2 마스크패턴으로피식각막을식각원하는패턴을형성한다.

公开(公告)号：KR1020120010860A

公开(公告)日：2012-02-06

申请号：KR1020100072484

申请日：2010-07-27

Applicant: 삼성전자주식회사

Inventor： 이형래 ,  강율 ,  윤경환 ,  김형희 ,  한소라 ,  박태회

IPC: H01L21/027 ,  H01L21/302

CPC classification number: H01L27/10891 ,  G03F7/40 ,  H01L21/0206 ,  H01L21/823842 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66606 ,  H01L21/0274 ,  G03F7/2041

Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to efficiently eliminate a residue with a simple and cheap process by eliminating the residue like scum remaining on a substrate through wet processing using acid diffusion. CONSTITUTION: A resist pattern(30P) is formed on a partial area of a substrate(10). A descum solution(50) including a acid source is touched with an outcome on which the resist pattern is formed. A resist residue(30S) remaining on the substrate surface is dissolved by using acid which is obtained from the acid source in the descum solution. A dissolved residue and the descum solution are removed from the substrate.

Abstract translation: 目的：提供一种制造半导体器件的方法，通过使用酸扩散通过湿法处理消除残留在基底上的残留物，通过简单且便宜的方法有效地消除残留物。 构成：在衬底（10）的部分区域上形成抗蚀剂图案（30P）。 触摸包含酸源的除垢溶液（50），形成抗蚀剂图案的结果。 通过使用从除去溶液中的酸源获得的酸溶解残留在基材表面上的抗蚀剂残余物（30S）。 从底物中除去溶解的残留物和除去溶液。