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公开(公告)号:KR1020090056590A
公开(公告)日:2009-06-03
申请号:KR1020070123809
申请日:2007-11-30
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02631 , H01L21/02233
Abstract: A fabrication method of an oxide semiconductor thin film transistor is provided to control excess on the surface of a channel easily by process the surface of the channel with a wet oxidizer. An oxide semiconductor channel(22a), a source electrode(23a) and a drain electrode(23b) connected to the both sides of channel layer are formed on a substrate(10). The surface of a channel is oxidized by contacting an oxide material on the channel surface. The oxide material is one of a liquid oxidizer and SAM(Self Assembled Monolayer) on the channel surface.
Abstract translation: 提供氧化物半导体薄膜晶体管的制造方法,通过用湿氧化剂处理通道的表面,容易地控制通道表面上的过量。 在基板(10)上形成氧化物半导体沟道(22a),连接到沟道层两侧的源电极(23a)和漏电极(23b)。 通道的表面通过在通道表面上接触氧化物材料而被氧化。 氧化物材料是通道表面上的液体氧化剂和SAM(自组装单层)之一。
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公开(公告)号:KR1020080109196A
公开(公告)日:2008-12-17
申请号:KR1020070057235
申请日:2007-06-12
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L51/30
CPC classification number: C09D4/06 , C08G77/58 , C08K5/5425 , C08L21/00 , C08L83/04 , C09D183/04 , C09D183/14 , H01L51/0036 , H01L51/052 , H01L51/0541 , H01L51/0545 , Y10T428/31663 , C08L2666/02 , C08L2666/52
Abstract: A composition for preparing an organic insulator and the organic insulator prepared using the same are provided to reduce the fabrication cost and simplify the fabrication process by forming the organic insulator using the wet etching process. A composition for preparing an organic insulator comprises the organic polymer, the organometallic compound, and the multiple integration containing silane system organic and inorganic hybrid material. The multiple integration containing silane system organic and inorganic hybrid material is the multiple integration containing organo silane system compound or the polymer. The polymer is obtained by hydrolyzing and performing the condensation reaction of the multiple integration organic silane system compound with acid or the base catalyst and water in the organic solvent.
Abstract translation: 提供了一种用于制备有机绝缘体的组合物和使用其制备的有机绝缘体,以通过使用湿蚀刻工艺形成有机绝缘体来降低制造成本并简化制造工艺。 用于制备有机绝缘体的组合物包括有机聚合物,有机金属化合物和含有硅烷系有机和无机混合材料的多重结合。 含有硅烷系统有机和无机混合材料的多重积分是含有机硅烷体系化合物或聚合物的多重整合。 聚合物通过水解和进行多组分有机硅烷体系化合物与酸或碱催化剂和水在有机溶剂中的缩合反应而获得。
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公开(公告)号:KR1020080104860A
公开(公告)日:2008-12-03
申请号:KR1020070052226
申请日:2007-05-29
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L29/7869
Abstract: A ZnO system thin film transistor and a manufacturing method thereof are provided to improve the electrical characteristic by suppressing the damage caused by the plasma effectively. A ZnO system thin film transistor comprises the substrate(10), the channel layer(22), the gate(20), the gate isolation layer(21), the source and drain electrodes(23a, 23b), and the passivation layer(24). The channel layer is formed on substrate. The channel layer comprises the multi laminated ZnO system unit semiconductor layer. The gate is built between the substrate and the channel layer. The gate isolation layer is prepared between the channel layer and the gate. The source and drain electrodes are prepared at both sides of the channel layer. The passivation layer covers the channel layer, source and drain electrodes. The upper most layer of the channel layer contains the ZnO with the concentration lower than the layer which is under the upper most layer.
Abstract translation: 提供一种ZnO系薄膜晶体管及其制造方法,能够有效地抑制等离子体的损伤来提高电气特性。 ZnO系薄膜晶体管包括衬底(10),沟道层(22),栅极(20),栅极隔离层(21),源极和漏极(23a,23b)和钝化层 24)。 沟道层形成在衬底上。 沟道层包括多层叠ZnO系单位半导体层。 栅极构建在衬底和沟道层之间。 在沟道层和栅极之间制备栅极隔离层。 源极和漏极准备在沟道层的两侧。 钝化层覆盖沟道层,源极和漏极。 沟道层的最上层含有浓度低于最上层的ZnO的ZnO。
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公开(公告)号:KR100491794B1
公开(公告)日:2005-05-30
申请号:KR1020020060384
申请日:2002-10-04
Applicant: 삼성전자주식회사
Inventor: 손경석
IPC: F24F1/00
Abstract: 본 발명은 흡입구를 개폐시키는 개폐부재를 구비한 공기조화기에 관한 것이다.
본 발명에 따른 공기조화기는 외관을 이루며 실내공기가 흡입되는 흡입구가 전면에 형성된 본체와, 진퇴이동하며 흡입구를 개폐하는 개폐부재를 구비한 것으로, 본체 내에는 개폐부재의 상부 및 하부를 실질적으로 동일하게 진퇴이동시키는 구동장치가 구비되어, 구동장치에 의해 개폐부재의 상부와 하부를 동일하게 진퇴이동시킴으로써 개폐부재의 테두리와 흡입구 사이의 이격정도가 불균일해지는 것을 방지하여 외관품질이 저하되는 것을 방지할 수 있게 되는 작용효과가 있다.-
公开(公告)号:KR100432222B1
公开(公告)日:2004-05-20
申请号:KR1020020021438
申请日:2002-04-19
Applicant: 삼성전자주식회사
IPC: F24F1/00
Abstract: PURPOSE: An air conditioner is provided to allow a user to selectively close some of plural outlets according to user's choice. CONSTITUTION: An air conditioner includes a main body(10) having plural outlets(14) formed thereon; wind direction blades(40) installed on the outlets to control direction of discharged air; and closing members(60) detachably joined to the outlets inside the wind direction blades to close some of the outlets. Supporting parts(41) are formed on both ends of the wind direction blades to rotate and detachably joined to both sides of the outlet. Receiving grooves(61) are formed on both ends of the closing member to allow the supporting parts of the wind direction blade to be joined to the outlet while the closing member is joined to the outlet. The supporting part includes extension parts extended from both of the ends of the wind direction blade toward an inside of the outlet, and having fixed elasticity; and hinge axes protruding from the extension parts to be inserted to hinge holes formed on both of the sides of the outlet.
Abstract translation: 目的:提供空调以允许用户根据用户的选择选择性地关闭一些多个出口。 一种空调包括:一个主体(10),其上形成有多个出口(14); 安装在出口上的风向叶片(40),用于控制排出空气的方向; 和封闭构件(60),其可拆卸地连接到风向叶片内的出口以关闭一些出口。 支撑部件(41)形成在风向叶片的两端以旋转并可拆卸地连接到出口的两侧。 接收槽(61)形成在闭合部件的两端,以使风向叶片的支撑部,而关闭件被接合到所述出口被连接到所述出口。 所述支撑部包括从所述风向叶片的两端朝向所述吹出口的内侧延伸且具有固定弹性的延伸部, 以及从延伸部分突出以便插入形成在出口的两侧上的铰链孔的铰链轴。
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公开(公告)号:KR1020030083059A
公开(公告)日:2003-10-30
申请号:KR1020020021438
申请日:2002-04-19
Applicant: 삼성전자주식회사
IPC: F24F1/00
Abstract: PURPOSE: An air conditioner is provided to allow a user to selectively close some of plural outlets according to user's choice. CONSTITUTION: An air conditioner includes a main body(10) having plural outlets(14) formed thereon; wind direction blades(40) installed on the outlets to control direction of discharged air; and closing members(60) detachably joined to the outlets inside the wind direction blades to close some of the outlets. Supporting parts(41) are formed on both ends of the wind direction blades to rotate and detachably joined to both sides of the outlet. Receiving grooves(61) are formed on both ends of the closing member to allow the supporting parts of the wind direction blade to be joined to the outlet while the closing member is joined to the outlet. The supporting part includes extension parts extended from both of the ends of the wind direction blade toward an inside of the outlet, and having fixed elasticity; and hinge axes protruding from the extension parts to be inserted to hinge holes formed on both of the sides of the outlet.
Abstract translation: 目的:提供一种空调,以便用户根据用户的选择有选择地关闭多个出口。 构成:空调机包括:主体(10),其上形成有多个出口(14); 安装在出口上的风向叶片(40)以控制排出的空气的方向; 以及可拆卸地接合到风向叶片内的出口的关闭构件(60),以关闭一些出口。 支撑部件(41)形成在风向叶片的两端,以便可旋转并可拆卸地连接到出口的两侧。 在封闭构件的两端形成有接收槽61,以使风向叶片的支撑部分与出口接合,同时封闭构件接合到出口。 支撑部分包括从风向叶片的两端延伸到出口的内侧的延伸部分,并且具有固定的弹性; 并且铰链轴从延伸部分突出以插入形成在出口两侧的铰链孔。
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公开(公告)号:KR1020170033831A
公开(公告)日:2017-03-27
申请号:KR1020170032461
申请日:2017-03-15
Applicant: 삼성전자주식회사
IPC: G02F1/1362 , G02F1/133 , G09G3/36
Abstract: 전기적신뢰성이향상된능동형표시장치의스위칭소자및 그구동방법이개시된다. 개시된능동형표시장치의스위칭소자는직렬연결된다수의박막트랜지스터를포함한다. 따라서, 하나의스위칭소자내에서다수의박막트랜지스터가동시에온(ON)이되는시간이외에는, 하나의스위칭소자내의각각의박막트랜지스터에비동시적으로양의전압을인가함으로써스위칭소자의신뢰성을향상시킬수 있다.
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公开(公告)号:KR101713994B1
公开(公告)日:2017-03-09
申请号:KR1020100138042
申请日:2010-12-29
Applicant: 삼성전자주식회사
IPC: H01L29/78
CPC classification number: H01L29/7869 , H01L29/78693
Abstract: 트랜지스터와그 제조방법및 트랜지스터를포함하는전자소자에관해개시되어있다. 개시된트랜지스터는채널층의백 채널영역(back channel region)에불소함유영역을구비할수 있다. 상기불소함유영역은불소를포함하는플라즈마로처리된영역일수 있다. 상기트랜지스터의소오스/드레인과채널층사이의계면영역은불소미함유영역일수 있다. 상기채널층은산화물반도체층일수 있다.
Abstract translation: 晶体管包括设置在栅极上方并包括氧化物半导体的沟道层。 源电极接触沟道层的第一端部,漏电极与沟道层的第二端部接触。 沟道层还包括形成在源极和漏极之间的沟道层的上部的含氟区。
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公开(公告)号:KR1020150079274A
公开(公告)日:2015-07-08
申请号:KR1020130169391
申请日:2013-12-31
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/786 , H01L29/36 , H01L21/336
CPC classification number: H01L29/78696 , H01L29/36
Abstract: 박막트랜지스터및 그제조방법이개시된다. 개시된박막트랜지스터는채널층이게이트전극과상대적으로가까운제 1영역과상대적으로거리가먼 제 2영역을포함할수 있으며, 채널층을구성하는물질중 적어도하나는제 1영역보다제 2영역에서의농도가더 클수 있다. 채널층은아연(Zn) 및불소(F)를포함할수 있으며, 제 2영역에서의불소의농도가제 1영역에서의불소의농도보다클 수있다.
Abstract translation: 公开了一种薄膜晶体管及其制造方法。 所公开的薄膜晶体管包括其中沟道区域相对靠近栅电极的第一区域和沟道层相对于栅电极相对较远的第二区域。 形成沟道层的至少一种材料能够在第二区域中具有比在第一区域中更大的浓度。 通道层能够含有锌(Zn)和氟(F)。 第二区域的氟浓度能够比第一区域的氟浓度大。
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公开(公告)号:KR1020150060150A
公开(公告)日:2015-06-03
申请号:KR1020130144247
申请日:2013-11-26
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/336 , H01L51/50
CPC classification number: H01L29/786 , H01L29/42384 , H01L51/50
Abstract: 박막트랜지스터및 그제조방법이개시된다. 개시된박막트랜지스터는, 게이트전극과, 채널층과, 게이트전극과채널층사이에구비된게이트절연층및, 소스전극및 드레인전극;을포함하며, 게이트전극은, 소스전극과채널층이컨택되는소스컨택영역및 드레인전극과채널층이컨택되는드레인컨택영역사이에, 게이트전압이인가되지않는적어도하나의비게이트영역을포함한다.
Abstract translation: 公开了一种薄膜晶体管及其制造方法。 所公开的薄膜晶体管包括栅电极,沟道层,形成在栅电极和沟道层之间的栅极绝缘层,源电极和漏电极。 栅电极包括至少一个非栅极区域,在与源极电极和沟道层接触的源极接触区域和与漏极电极和沟道层接触的漏极接触区域之间不施加电流。
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