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公开(公告)号：KR101174422B1
公开(公告)日：2012-08-16
申请号：KR1020090136199
申请日：2009-12-31
Applicant: 서울대학교산학협력단
IPC: B82B3/00
CPC classification number: C01B33/12 , B82Y30/00 , B82Y40/00 , C01P2002/70 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/64 , C23C16/02 , C23C16/402 , Y10T428/2933 , Y10T428/296
Abstract: 본발명은실리카나노와이어의제조방법에관한것이다. 본발명의일 실시예에따른실리카나노와이어의제조방법에있어서, 반응챔버내에피처리체가제공된다. 이후, 상기반응챔버내에화학식 SiAB(상기 A 및 B는서로다른작용기임)인헤테로랩틱구조를갖는전구체를공급하고, 상기전구체의상기작용기 A 및 B 중어느하나와우선적으로반응하는산소함유가스를공급한다. 이후, 상기전구체와상기산소함유가스의반응에의한중간체가상기피처리체의표면상에서성장함으로써실리카나노와이어가제조된다.
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公开(公告)号：KR1020100049990A
公开(公告)日：2010-05-13
申请号：KR1020080109060
申请日：2008-11-04
Applicant: 서울대학교산학협력단
IPC: G02F1/136 , H01L29/786
CPC classification number: H01L29/7869 , H01L29/458 , H01L29/4916
Abstract: PURPOSE: A thin film transistor and a method for manufacturing the same are provided to include an active layer which can obtain a superior transistor feature. CONSTITUTION: An active layer(13a) is formed by an oxide including at least one of Sn, Al, Mg, and Ti. A gate conductive film(11a) is overlapped with at least part of the active layer through a gate insulating film arranged on the active layer. Source and drain electrodes(14a) are connected to both sides of the active layer separated by the gate conductive layer. A field effect thin film transistor has an upper gate structure.
Abstract translation: 目的：提供一种薄膜晶体管及其制造方法，以包括能获得优异晶体管特征的有源层。 构成：活性层（13a）由包含Sn，Al，Mg和Ti中的至少一种的氧化物形成。 栅极导电膜（11a）通过布置在有源层上的栅极绝缘膜与有源层的至少一部分重叠。 源极和漏极（14a）连接到由栅极导电层分开的有源层的两侧。 场效应薄膜晶体管具有上栅极结构。
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公开(公告)号：KR1020160115076A
公开(公告)日：2016-10-06
申请号：KR1020150041803
申请日：2015-03-25
Applicant: 서울대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L29/786
Abstract: 본발명은큐빅구조로보았을때 격자상수가대략 3.8-4.2 Å정도인단결정기판상에산소결핍또는불순물이주입된켜쌓기또는동종켜쌓기주석산바륨반도체산화물박막을증착시킨, 전기적특성이우수하면서열적으로안정한투명트랜지스터및 그제조방법에관한것이다.
Abstract translation: 本发明涉及：当观察为立方结构时，在具有晶格常数的单晶衬底上沉积氧缺乏或杂质注入的外延或同质外延的钡锡酸盐半导体氧化物薄膜的透明晶体管 ，约3.8-4.2埃，透明晶体管具有优异的电性能并且是热稳定的; 及其制造方法。
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公开(公告)号：KR1020140093541A
公开(公告)日：2014-07-28
申请号：KR1020130006092
申请日：2013-01-18
Applicant: 서울대학교산학협력단
Abstract: The present invention relates to a mixing tank and a purification device for the bottom of a river using the same and, more specifically, to a mixing tank for carrying out purification by dividing bubbles into nano-sized ones using a coil-shaped pipe and spraying the divided nano-sized bubbles and a purification device for the bottom of a river using the same. The present invention can provide a mixing tank capable of promoting pollutant digestion by microorganisms and alleviating pollution of a river by generating nano-sized bubbles, injecting the bubbles into sediment on the bottom of the river, and guiding vigorous activities of the microorganisms and a purification device for the bottom of a river using the same. Furthermore, the present invention can provide a mixing tank capable of maximizing efficiency of alleviating pollution of a river by maximizing shear stress that bubbles in pipes receive using a first coil pipe, a first tank, and a second coil pipe and generating nano-sized bubbles and a purification device for the bottom of a river using the same.
Abstract translation: 本发明涉及一种用于使用该混合罐的河底的混合罐和净化装置，更具体地说，涉及一种通过使用螺旋形管将气泡分成纳米尺寸进行净化的混合罐和喷雾 分割的纳米级气泡和使用其的河流底部的净化装置。 本发明可以提供一种能够促进微生物污染物消化并通过产生纳米级气泡减轻河流污染，将气泡注入到河底的沉积物中，引导微生物的活力和净化的混合罐 装置为河底使用相同。 此外，本发明可以提供一种能够通过使用第一线圈管，第一槽和第二线圈管使管内的气泡最大化的剪切应力来最大化缓解河流污染的效率的混合槽，并产生纳米尺寸的气泡 以及使用其的河道底部的净化装置。
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Patent Agency Ranking
公开(公告)号：KR101337297B1
公开(公告)日：2013-12-05
申请号：KR1020120102418
申请日：2012-09-14
Applicant: 서울대학교산학협력단
IPC: H01L21/20 , H01L21/336 , H01L29/786
CPC classification number: H01L21/02565 , H01L21/02623
Abstract: The present invention relates to a system for manufacturing an oxide semiconductor and a method thereof. The present invention is provided to induce charges by injecting an impurity to BaSnO3 and replace Ba by La to minimize the scattering of the impurity, thereby obtaining high charge mobility. The present invention provides a method for synthesizing mono-crystal (Ba, La) SnO3 by using BaCO3, SnO2, and La2O3 as a starting material and a method for synthesizing mono-crystal (Ba, La) SnO3 by using poly-crystal BaSnO3 as the starting material. [Reference numerals] (AA) Temperature condition of a high temperature reactor
Abstract translation: 本发明涉及一种用于制造氧化物半导体的系统及其方法。 提供本发明以通过向BaSnO 3注入杂质并用La代替Ba以使杂质的散射最小化以获得高电荷迁移率来诱发电荷。 本发明提供一种通过使用BaCO 3，SnO 2和La 2 O 3作为原料合成单晶（Ba，La）SnO 3的方法和通过使用多晶BaSnO 3作为单晶（Ba，La）SnO 3合成单晶 起始材料。 （附图标记）（AA）高温反应器的温度条件
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公开(公告)号：KR1020100078354A
公开(公告)日：2010-07-08
申请号：KR1020080136593
申请日：2008-12-30
Applicant: 서울대학교산학협력단
CPC classification number: H01L51/5203 , H01L51/5271 , B82Y20/00 , B82Y30/00 , H01L21/02288 , H01L21/7684 , H01L22/12 , H01L39/2445 , H01L51/0008 , H01L2224/80862 , H01L2224/80874
Abstract: PURPOSE: An organic light emitting devices and a fabrication method thereof are provided to extract the loss of light due to total reflection and a light guide mode by forming a nono-structure having a micro-pattern of an uneven shape. CONSTITUTION: A nanostructure(204) having a micro-pattern(204a) of a concavo-convex shape is formed on a substrate(202) such as the transparent glass and plastic. A planarization layer(206) planarizing the micro-pattern is formed on the nanostructure. The micro-pattern has a circular or polygonal shape. A first electrode(208), an organic layer(210), and a second electrode(212) are successively laminated on the top of the planarization layer.
Abstract translation: 目的：提供一种有机发光器件及其制造方法，以通过形成具有不均匀形状的微图案的非结构来提取由于全反射和光导模式引起的光损失。 构成：在诸如透明玻璃和塑料的基底（202）上形成具有凹凸形状的微图案（204a）的纳米结构（204）。 在纳米结构上形成平坦化微图案的平坦化层（206）。 微型图案具有圆形或多边形。 第一电极（208），有机层（210）和第二电极（212）依次层叠在平坦化层的顶部。
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公开(公告)号：KR1020100067766A
公开(公告)日：2010-06-22
申请号：KR1020080126294
申请日：2008-12-12
Applicant: 서울대학교산학협력단
CPC classification number: G01K17/006 , G01K7/12 , G01K19/00
Abstract: PURPOSE: A fine heat capacity measure device at a high temperature is provided to maximize the measurement efficiency by enabling heat capacity measurement by replacing specimen repeatedly with a sensor correction only of one time. CONSTITUTION: A fine heat capacity measure device at a high temperature comprises a probe(100). The probe is made of stainless material and forms a conduit. The probe includes an electric connection terminal(110), a specimen support(130), and a vacuum port(120). The connection terminal is arranged at one end of the probe. The specimen support is arranged at the other end of the probe in order to support a micro calorimeter. The vacuum port is arranged at the end of one side of the conduit at a given interval from the electric connection terminal. The probe is inserted into a quartz tube. A cooling adapter which is able to cool with the water is arranged at both ends of the quartz tube.
Abstract translation: 目的：提供高温度的精细热容量测量装置，通过仅使用一次传感器校正反复替换样品来实现热容量测量，从而使测量效率最大化。 构成：高温下的精细热容量测量装置包括探针（100）。 探头由不锈钢材料制成，形成导管。 探针包括电连接端子（110），样本支架（130）和真空端口（120）。 连接端子布置在探头的一端。 样品支架布置在探针的另一端，以支持微量热计。 真空端口从电连接端子以给定的间隔布置在导管的一侧的端部。 将探头插入石英管中。 能够用水冷却的冷却适配器布置在石英管的两端。
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公开(公告)号：KR1020170090193A
公开(公告)日：2017-08-07
申请号：KR1020160010752
申请日：2016-01-28
Applicant: 한국과학기술연구원 , 재단법인 멀티스케일 에너지시스템 연구단 , 서울대학교산학협력단
IPC: H01M8/1065 , H01M8/1067 , C08J5/22 , H01M8/1018
CPC classification number: Y02P70/56
Abstract: 본발명은액체흐름유도형고분자막, 이의제조방법및 이를포함하는연료전지에관한것으로, 보다상세하게는물리적인대칭성및 화학적인비대칭성을가지는복수의프리즘패턴을이용하여액체의흐름성을조절할수 있는액체흐름유도형고분자막을제조하여, 상기액체흐름유도형고분자막을연료전지의전해질막으로적용함으로써, 전해질막의수분함량을조절할수 있도록하여, 종래연료전지운전시, 전해질막의수분함량조절이어렵고, 수화및 탈수과정이반복적으로일어나전해질막과전극간의계면이탈리되어셀 저항이증가되는문제점을해결하는효과를달성할수 있다.
Abstract translation: 本发明可以通过使用多个具有，更特别的棱镜图案的控制液体的流动，到物理对称性和化学不对称涉及一种液体流动导向型聚合物膜，其制备方法和燃料电池，包括相同的 以制备液体流动导向型聚合物膜，通过施加液体流动导向型聚合物膜作为燃料电池的电解质膜，因此可以调整所述电解质膜的水含量，是困难的，在燃料电池操作过程中常规的，电解质膜的水含量的调整， 水合和脱水过程被重复直至电解质膜之间的界面意大利和电极，可以实现解决了电池电阻增大的问题的效果。
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公开(公告)号：KR101579599B1
公开(公告)日：2015-12-22
申请号：KR1020140010099
申请日：2014-01-28
Applicant: 서울대학교산학협력단
Abstract: 본발명은미세기포토출장치에대한것으로서, 특히펜스를이용하여미세기포를효과적으로수중에토출할수 있는미세기포토출장치에관한것이다. 본발명은펜스에장착되는가이드와, 상기가이드를따라이동하는이동체, 및상기이동체에장착되어미세기포를토출하는노즐을포함한다. 이에따라, 본발명은노즐이연결된이동체가펜스를따라이동하도록하여자연수계내 다양한구역에서동시다발적으로수중의조류와같은부유물들을부상시킬수 있는미세기포토출장치를제공할수 있다.
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