公开(公告)号：KR101218925B1

公开(公告)日：2013-01-21

申请号：KR1020110078853

申请日：2011-08-09

Applicant: 성균관대학교산학협력단

Inventor： 박종윤 ,  송우석 ,  김수연

IPC: C01B31/02 ,  B82B3/00 ,  H01L21/335 ,  B82Y40/00

CPC classification number: C01B32/184 ,  B82B3/0038 ,  B82Y40/00 ,  C01B2204/06 ,  C23C16/26

Abstract: PURPOSE: A graphene nanoribbon forming method and a transistor manufacturing method using the same are provided to easily adjust the width of graphene nanoribbon by determining the width of a graphene thin film depending on the width of a phenanthrene thin film. CONSTITUTION: A graphene nanoribbon forming method includes the following steps: a thin film is formed on a substrate(S110); and the substrate is heated by supplying carbon supplying gas in order to form a graphene thin film on a phenanthrene thin film which is formed by a focused ion-beam process(S120). The carbon supplying gas is at least one selected from a group including carbon compounds composed of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, and toluene. [Reference numerals] (AA) Start; (BB) End; (S110) Forming a phenanthrene thin film on a substrate using a focused ion-beam process; (S121) Heating the substrate under hydrogen atmosphere; (S123) Forming a graphene thin film by supplying inert gas and carbon supplying gas on the substrate

Abstract translation: 目的：提供石墨烯纳米带形成方法和使用其的晶体管制造方法，以通过根据菲薄膜的宽度确定石墨烯薄膜的宽度来容易地调节石墨烯纳米薄片的宽度。 构成：石墨烯纳米带形成方法包括以下步骤：在基板上形成薄膜（S110）; 通过供给碳供应气体来加热基板，以便通过聚焦离子束法形成的菲薄膜上形成石墨烯薄膜（S120）。 碳供应气体是选自由一氧化碳，甲烷，乙烷，乙烯，乙醇，乙炔，丙烷，丙烯，丁烷，丁二烯，戊烷，戊烯，环戊二烯，己烷，环己烷，苯， 和甲苯。 （附图标记）（AA）开始; （BB）结束; （S110）使用聚焦离子束工艺在基板上形成菲薄膜; （S121）在氢气氛下加热基板; （S123）通过在基板上供给惰性气体和碳供给气体来形成石墨烯薄膜

公开(公告)号：KR1020120086938A

公开(公告)日：2012-08-06

申请号：KR1020110008303

申请日：2011-01-27

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  강세구 ,  박종윤 ,  전민환 ,  연제관

IPC: G11C11/15 ,  H01L21/8247 ,  H01L27/115

CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: PURPOSE: A method for manufacturing a magnetic random access memory is provided to improve the reliability of a device by removing the metal residue in a sidewall of an MTJ structure. CONSTITUTION: A laminate structure(40) with an MTJ structure is formed on a substrate. Laminate patterns with the MTJ structure are formed by patterning the laminate structure. Metal residue accumulated in the sidewalls of the laminate patterns are etched by using neutral beams(NB1,NB2).

Abstract translation: 目的：提供一种用于制造磁性随机存取存储器的方法，通过去除MTJ结构的侧壁中的金属残渣来提高器件的可靠性。 构成：在基板上形成具有MTJ结构的层叠结构（40）。 通过图案化层压结构形成具有MTJ结构的层压图案。 通过使用中性光束（NB1，NB2）蚀刻积聚在层叠图案的侧壁中的金属残留物。

公开(公告)号：KR1020110098307A

公开(公告)日：2011-09-01

申请号：KR1020100017864

申请日：2010-02-26

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  강세구 ,  전민환 ,  박종윤 ,  박병재 ,  연제관

IPC: H01L21/205

CPC classification number: H01L21/32055 ,  C23C16/505 ,  H01L21/265

Abstract: 본 발명은 반도체 기판 및 이의 제조 방법에 관한 것으로, 본 발명은 저온에서 반도체막의 증착이 이루어져, 결정질 및 비정질이 혼재된 반도체막을 형성할 수 있는 반도체 기판 및 이의 제조 방법을 제공한다.
따라서, 전기적 특성이 우수한 결정질 비정질이 혼재된 반도체막을 형성하는 것이 가능하다.

公开(公告)号：KR101214758B1

公开(公告)日：2012-12-21

申请号：KR1020100017680

申请日：2010-02-26

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  강세구 ,  전민환 ,  박종윤 ,  박병재 ,  연제관

IPC: H01L21/3065 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32706 ,  H01L43/12

Abstract: 본발명은식각방법에관한것이다. 본발명에의하면, RF 파워를온 주기및 오프주기를반복하고, 기재(substrate)에상기온 주기및 오프주기에대응하여각각마이너스파워주기및 플러스파워주기를반복하여상기기재상의피식각물을식각하는식각방법이제공된다.

Abstract translation: 蚀刻方法技术领域本发明涉及蚀刻方法。 根据本发明，提供了一种蚀刻方法，用于重复RF功率的接通周期和断开周期，并且重复负载功率周期和正功率周期， 它现在可用。

公开(公告)号：KR100850266B1

公开(公告)日：2008-08-04

申请号：KR1020070047116

申请日：2007-05-15

Applicant: 성균관대학교산학협력단

Inventor： 박종윤 ,  류동헌 ,  최원철

IPC: H01J1/304 ,  H01J9/02 ,  C01B31/02 ,  B82Y40/00

CPC classification number: H01J1/304 ,  B01J19/126 ,  B82Y40/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: A carbon nanotube field emission source comprising a noble metal layer and a manufacturing method thereof are provided to enhance thermal conductivity and electrical conductivity by using a noble metal layer as a buffer layer. An Nb layer is formed on an upper surface of a substrate. A noble metal layer is formed on the upper surface of the substrate including the Nb layer. A carbon nanotube is formed on the upper surface of the substrate including the noble metal layer. A heat treatment process for the substrate including the carbon nanotube is performed by using a microwave or an inductive coil. The heat treatment temperature is equal to and less than 400 degrees centigrade. The noble metal layer is composed of one or more elements selected from a group including Au, Ag, Cu, and an alloy comprising one of Au, Ag, and Cu.

Abstract translation: 提供了包含贵金属层的碳纳米管场发射源及其制造方法，以通过使用贵金属层作为缓冲层来提高导热性和导电性。 在基板的上表面上形成有Nb层。 在包括Nb层的基板的上表面上形成贵金属层。 在包括贵金属层的基板的上表面上形成碳纳米管。 通过使用微波或感应线圈来进行包括碳纳米管的基板的热处理工艺。 热处理温度等于或低于400摄氏度。 贵金属层由选自包括Au，Ag，Cu的一种或多种元素和包含Au，Ag和Cu中的一种的合金构成。