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公开(公告)号：KR101878735B1
公开(公告)日：2018-07-17
申请号：KR1020110076143
申请日：2011-07-29
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , C23C16/26 , H01B1/04 , H01L21/335
Abstract: 그래핀의제조방법이제공되며, 균일한두께를가지고정공이동도가우수한그래핀을제조하는방법및 상기방법에의해얻어지는그래핀이제공된다.
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公开(公告)号：KR101878734B1
公开(公告)日：2018-07-16
申请号：KR1020110061796
申请日：2011-06-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , B32B18/00 , H01B1/04 , H01L21/331
CPC classification number: B32B9/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02378 , H01L21/02488 , H01L21/02527 , H01L21/02656 , H01L29/1606 , H01L29/1608 , H01L29/778 , H01L31/022466 , H01L31/1884 , H01M4/96 , H01M8/0234 , H01M8/086 , H01M8/1007 , H01M8/1011 , H01M8/103 , H01M8/1041 , Y02E10/50 , Y02E60/523 , Y02P70/56
Abstract: 그래핀의직성장방법이제공되며, 상기직성장방법에따르면기판상에서그래핀을직접성장시킨후 그결정성을향상시킴으로써별도의전사공정이요구되지않아그래핀의손상을최소화시키는것이가능해진다.
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公开(公告)号：KR1020170126547A
公开(公告)日：2017-11-20
申请号：KR1020160056457
申请日：2016-05-09
Applicant: 성균관대학교산학협력단
CPC classification number: G01R27/2605 , B25J15/00 , B25J19/02
Abstract: 본발명은미끄럼감지센서및 미끄럼을감지하는로봇손에관한것으로서, 본발명에따른미끄럼감지센서는이동하는바디부의표면에고정되는베이스층, 베이스층의상면에고정되며비압축성유전체로형성되는유전체층, 유전체층의상면에위치하고물체와접촉하여미끄러질때 유전체층과분리되는접촉층, 베이스층과유전체층사이에위치하는제 1 전극, 제 1 전극의상부에위치하며접촉층의하면에고정되는제 2 전극및 제 1 전극과제 2 전극사이의캐패시턴스변화를감지하여미끄럼을감지하는미끄럼감지부를포함하는것을특징으로한다.
Abstract translation: 根据本发明的滑动传感器包括固定到移动体的表面的基层，固定到基层的上表面并由不可压缩的电介质形成的电介质层， 第一电极，其位于介电层的上表面上并在与物体接触滑动时与介电层分开;第一电极，其位于基底层与介电层之间;第二电极，其位于第一电极的顶部上; 以及滑动检测单元，用于通过检测两个电极之间的电容变化来检测滑动。
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15.发明公开
公开(公告)号：KR1020140104542A
公开(公告)日：2014-08-29
申请号：KR1020130017157
申请日：2013-02-18
Applicant: 삼성전자주식회사 , 코닝정밀소재 주식회사 , 성균관대학교산학협력단
IPC: H01G11/24 , H01G11/36 , H01M4/13 , H01M4/66 , H01M4/78 , H01G11/28 , H01G11/50 , H01M4/133 , H01M4/1393
CPC classification number: H01G11/24 , B82Y99/00 , H01G11/28 , H01G11/36 , H01G11/50 , H01G13/02 , H01M4/04 , H01M4/0471 , H01M4/13 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M4/663 , H01M4/667 , H01M4/78 , H01M10/0587 , Y02E60/13 , Y10S977/932 , Y10T29/417 , Y10T29/49115
Abstract: Disclosed are an electrode structure having a roll shape, an electrode and an electric device applying the same, and a method for manufacturing the electrode structure. The disclosed electrode structure has a structure of a graphene film having a nano material dispersed on at least one side wound in a roll shape. The electrode structure can have a high electrode density while securing a space making the diffusion of an electrolyte ion between the contact surfaces of the graphene film easy, and can be stably maintained in a shape of being vertically oriented on a current collector when applied to an electrode of an energy storage device such as a supercapacitor.
Abstract translation: 公开了具有辊状的电极结构，电极和施加该电极结构的电气装置，以及用于制造电极结构的方法。 所公开的电极结构具有在卷绕成卷状的至少一侧分散有纳米材料的石墨烯膜的结构。 电极结构可以具有高电极密度，同时确保使电解质离子在石墨烯膜的接触表面之间的扩散容易的空间，并且可以被稳定地保持为在集电器上垂直取向的形状 诸如超级电容器的能量存储装置的电极。
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Patent Agency Ranking
公开(公告)号：KR1020140023631A
公开(公告)日：2014-02-27
申请号：KR1020120089736
申请日：2012-08-16
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/194 , C23C16/56 , H01J37/321 , H01J37/32146 , Y10S977/845 , B01J19/12
Abstract: Disclosed are a method and an appartus for restoring the physical properties of graphene. The method and the apparatus for restoring the physical properties of graphene restore the physical properties of graphene by exposing the graphene to low density plasma within a range of 0.3*10^8-30*10^8 cm^-3 in a condition in which the graphene is grounded. The method and the apparatus for restoring the physical properties of graphene are compatible with a silicon process, are environment-friendly, enables a high speed process, a low temperature process, and a large area process.
Abstract translation: 公开了用于恢复石墨烯的物理性质的方法和应用。 用于恢复石墨烯的物理性能的方法和装置通过在0.3×10 ^ 8-30×10 ^ 8cm -3 -3的范围内将石墨烯暴露于低密度等离子体来恢复石墨烯的物理性质，其中 石墨烯接地。 用于恢复石墨烯的物理性能的方法和装置与硅工艺兼容，环境友好，能够实现高速工艺，低温工艺和大面积工艺。
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公开(公告)号：KR1020130113201A
公开(公告)日：2013-10-15
申请号：KR1020120035595
申请日：2012-04-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C23C28/34 , C01B32/186 , C01B2204/04 , C23C16/44
Abstract: PURPOSE: A metal corrosion prevention system is provided to prevent the corrosion of metal as highly corrosive metal ions cannot be distributed inside a metal layer such as an electrode, thereby preventing the corrosion of the metal. CONSTITUTION: A metal corrosion prevention system includes a solution including first metal ions, a metal layer, and a graphene layer. The metal layer includes a second metal partially dipped into the solution. The graphene layer is formed on the metal layer and formed with a chemical vapor deposition method. The first metal has a reducing power larger than that of the second metal. [Reference numerals] (AA) Voltage vs. Li/Li; (BB) Discharge; (CC) Charge; (DD) Capacity (μAh/cm^2)
Abstract translation: 目的：提供金属腐蚀防止系统，以防止金属腐蚀，因为高度腐蚀性的金属离子不能分布在诸如电极的金属层内，从而防止金属的腐蚀。 构成：金属腐蚀防止系统包括包含第一金属离子，金属层和石墨烯层的溶液。 金属层包括部分浸入溶液中的第二金属。 在金属层上形成石墨烯层，并用化学气相沉积法形成。 第一金属具有比第二金属更大的还原力。 （标号）（AA）电压对Li / Li; （BB）放电; （CC）费用; （DD）容量（μAh/ cm ^ 2）
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公开(公告)号：KR1020110138195A
公开(公告)日：2011-12-26
申请号：KR1020110059746
申请日：2011-06-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , B82B1/00 , H01L21/328 , H01L51/50
CPC classification number: H01L29/778 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28255 , H01L29/1606 , H01L29/4908 , H01L29/7317 , H01L29/7613 , H01L29/78684 , Y10T428/30 , C01B32/182 , C01B2204/02
Abstract: PURPOSE: An alkali metal containing monolayer graphene and an electronic device including the same are provided to maintain the inherent characteristic of the graphene by forming high band gap in the graphene through the localization of charges based on non-chemical bonds. CONSTITUTION: Alkali metals are prepared by being selected from lithium, sodium, potassium, rubidium, cesium, and francium. The alkali metals are placed on at least one surface of a monolayer graphene. The alkali metals are in second dimensional thin film structure. About 30-99% of the entire surface area of the monolayer graphene is occupied by the alkali metals. The band gap of the monolayer graphene is more than or equal to 0.4eV. The area of the monolayer graphene is more than or equal to 1cm^2.
Abstract translation: 目的：提供含有碱金属的单层石墨烯及其电子装置，以通过基于非化学键的电荷定位在石墨烯中形成高带隙来维持石墨烯的固有特性。 构成：碱金属是通过选自锂，钠，钾，铷，铯和are制成的。 碱金属被放置在单层石墨烯的至少一个表面上。 碱金属处于二维薄膜结构中。 单层石墨烯的整个表面积的约30-99％被碱金属占据。 单层石墨烯的带隙大于或等于0.4eV。 单层石墨烯的面积大于或等于1cm ^ 2。
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公开(公告)号：KR1020110074357A
公开(公告)日：2011-06-30
申请号：KR1020090131294
申请日：2009-12-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/84
Abstract: PURPOSE: A method of forming an oxide film is provided to remove an SiOC film between an SiC substrate and an SiO2 oxide film by projecting beam on an SiO2 oxide film after forming the SiO2 oxide. CONSTITUTION: In a method of forming an oxide film, an SiC substrate(110) is prepared. An SiO2 oxide film(120) is formed on the SiC substrate. The SiO2 oxide film is formed through thermal oxidation method using water and oxygen. The SiOC film(130) is formed between the SiC substrate and the SiO2 oxide film. An electron beam is researched on the SiO2 oxide film.
Abstract translation: 目的：提供形成氧化膜的方法，以在形成SiO 2氧化物之后，通过在SiO 2氧化物膜上投射光束来除去SiC衬底和SiO 2氧化物膜之间的SiOC膜。 构成：在形成氧化膜的方法中，制备SiC衬底（110）。 在SiC衬底上形成SiO 2氧化物膜（120）。 通过使用水和氧的热氧化法形成SiO 2氧化物膜。 在SiC衬底和SiO 2氧化物膜之间形成SiOC膜（130）。 研究了SiO2氧化膜的电子束。
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20.发明公开
公开(公告)号：KR1020090128708A
公开(公告)日：2009-12-16
申请号：KR1020080054588
申请日：2008-06-11
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L51/002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , G01N21/65 , H01L51/0048 , H01L51/0049
Abstract: PURPOSE: A carbon nanotube, a device containing the carbon nanotube, and a method for controlling the optical inter-band transition of the carbon nanotube are provided to improve the sensitivity and selectivity (purity) of a device. CONSTITUTION: A carbon nanotube is a p-doped carbon nanotube, wherein the carbon nanotube shows the optical inter-band transition in the VIS-NIR range, and only one optical inter-band transition appears at the corresponding p-doped state of the carbon nanotube. The carbon nanotube is p-doped by using an oxidant having a reduction potential of 0.8eV or more based on a standard hydrogen electrode. The carbon nanotube is p-doped by using an oxidant which is a metal salt or a nitronium compound.
Abstract translation: 目的：提供碳纳米管，含有碳纳米管的装置以及控制碳纳米管的光学带间转变的方法，以提高装置的灵敏度和选择性（纯度）。 构成：碳纳米管是p掺杂的碳纳米管，其中碳纳米管显示VIS-NIR范围内的光学带间转变，并且在碳的相应p掺杂状态下仅出现一个光学带间转变 纳米管。 通过使用基于标准氢电极的还原电位为0.8eV以上的氧化剂，对碳纳米管进行p掺杂。 通过使用作为金属盐或硝鎓化合物的氧化剂对碳纳米管进行p掺杂。
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