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公开(公告)号：KR1020080047923A
公开(公告)日：2008-05-30
申请号：KR1020060117953
申请日：2006-11-27
Applicant: 전자부품연구원
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/14612 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/1274
Abstract: An optical detection sensor and a manufacturing method thereof are provided to downsize a switching transistor by forming the switching transistor using polycrystalline silicon. A storage capacitor stores charges generated from an amorphous silicon thin film transistor, and a polycrystalline silicon thin film transistor is switched to shift the charges stored in the storage capacitor. The polycrystalline silicon thin film transistor includes a polycrystalline silicon island(231) with a doped region for an ohmic contact, a first interlayer dielectric(240) enclosing the polycrystalline silicon island, a switching gate electrode(251) formed on the first interlayer dielectric, and a second interlayer dielectric(260) formed on the first interlayer dielectric. The first and second interlayer dielectrics are etched to form a pair of trenches exposing the doped region. A source electrode(331) and a drain electrode(332) are formed in the trenches.
Abstract translation: 提供光学检测传感器及其制造方法，通过使用多晶硅形成开关晶体管来缩小开关晶体管的尺寸。 存储电容器存储从非晶硅薄膜晶体管产生的电荷，并且切换多晶硅薄膜晶体管以移位存储在存储电容器中的电荷。 多晶硅薄膜晶体管包括具有用于欧姆接触的掺杂区域的多晶硅岛（231），封装多晶硅岛的第一层间电介质（240），形成在第一层间电介质上的开关栅电极（251） 和形成在第一层间电介质上的第二层间电介质（260）。 蚀刻第一和第二层间电介质以形成暴露掺杂区域的一对沟槽。 源极电极（331）和漏电极（332）形成在沟槽中。
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公开(公告)号：KR100822270B1
公开(公告)日：2008-04-16
申请号：KR1020060130796
申请日：2006-12-20
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/41733 , H01L29/458 , H01L29/78678
Abstract: A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.
Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。 在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。 第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。 第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。 在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。 在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。
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公开(公告)号：KR1020060075644A
公开(公告)日：2006-07-04
申请号：KR1020040114464
申请日：2004-12-28
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/02675 , H01L21/2007 , H01L21/2026 , H01L21/2033 , H01L27/1266
Abstract: 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 스퍼터링으로 비정질 실리콘 박막을 형성하기 때문에, 그 비정질 실리콘 박막에는 수소의 함량이 거의 없어, 탈수소화 공정을 생략하여 고분자 기판의 변형 및 비정질 실리콘 박막에서 크랙의 발생을 방지할 수 있어 소자의 특성이 우수해지는 효과가 있다.
다결정, 실리콘, 수소, 스퍼터링, 변형-
公开(公告)号：KR1020040044755A
公开(公告)日：2004-05-31
申请号：KR1020020072926
申请日：2002-11-22
Applicant: 전자부품연구원
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/1333 , G02F2202/02 , G02F2202/09
Abstract: PURPOSE: A double structure insulation film mixed organic and inorganic is provided to reduce a surface distortion of a substrate by stacking an organic insulation layer on the substrate. CONSTITUTION: A gas barrier layer(2) is formed on a polymer substrate(1). A gate electrode(3) is formed on the gas barrier layer(2). An organic insulation layer(4) is formed on the gate electrode(3). An inorganic insulation layer(5) is formed on the organic insulation layer(4). A source-drain electrode(6) and a semiconductor layer(7) used as a thin film transistor are formed on the inorganic insulation layer(5). The organic insulation layer(4) is made of anyone material of polycarbonate, polyimide and acryl which have below 2.5GPa of Young's module and superior mechanical and electrical characteristics. The inorganic insulation layer(5) is made of SiO2 having 80-100GPa of Young's module and its thickness is within 200nm.
Abstract translation: 目的：提供混合有机和无机的双重结构绝缘膜，以通过在基板上层叠有机绝缘层来减小基板的表面变形。 构成：在聚合物基材（1）上形成阻气层（2）。 在阻气层（2）上形成栅电极（3）。 在栅电极（3）上形成有机绝缘层（4）。 在有机绝缘层（4）上形成无机绝缘层（5）。 在无机绝缘层（5）上形成用作薄膜晶体管的源 - 漏电极（6）和半导体层（7）。 有机绝缘层（4）由聚碳酸酯，聚酰亚胺和丙烯酸树脂的任何材料制成，其杨氏模量小于2.5GPa，具有优异的机械和电气特性。 无机绝缘层（5）由具有80-100GPa的杨氏模块的SiO 2制成，其厚度在200nm以内。
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公开(公告)号：KR101402606B1
公开(公告)日：2014-06-03
申请号：KR1020120141829
申请日：2012-12-07
Applicant: 전자부품연구원
CPC classification number: H01L27/3246 , H01L27/3258 , H01L51/0023 , H01L51/0037 , H01L51/5206 , H01L51/56 , H01L2227/323 , H01L2251/5392 , G09F9/00 , G09G3/3225
Abstract: The present invention relates to a pixel structure of an active matrix display and a method for manufacturing the same, capable of simplifying a process of manufacturing a pixel electrode and a pixel definition layer and solving a problem caused by a terminal formed at a peripheral portion of a pixel electrode according to patterning of the pixel electrode. The pixel structure according to the present invention includes a base substrate, a plurality of pixel circuit electrodes, an insulation layer, and a composite layer. The pixel circuit electrodes are arranged on the base substrate in a matrix form. The insulation layer is formed on the base substrate to cover outer edges of the pixel circuit electrodes. The composite layer is integrally formed with the plurality of pixel circuit electrodes and the insulation layer to cover the upper sides of the plurality of pixel circuit electrodes and the insulation layer. The composite layer includes a conductive pixel electrode formed to be connected to the pixel circuit electrodes exposed from the insulation layer and a nonconductive pixel definition layer at an outer edge of the pixel electrode. The composite layer is formed based on a conductive polymer, the pixel layer is formed by changing the electrical resistance characteristics of the conductive polymer into nonconductive ones, and the remaining parts are formed to be the pixel electrode.
Abstract translation: 本发明涉及一种有源矩阵显示器的像素结构及其制造方法，其能够简化像素电极和像素限定层的制造工艺，并解决由形成在外围部分的端子所引起的问题 根据像素电极的图案化的像素电极。 根据本发明的像素结构包括基底基板，多个像素电路电极，绝缘层和复合层。 像素电路电极以矩阵形式布置在基底基板上。 绝缘层形成在基底基板上以覆盖像素电路电极的外边缘。 复合层与多个像素电路电极和绝缘层一体地形成，以覆盖多个像素电路电极和绝缘层的上侧。 复合层包括形成为连接到从绝缘层暴露的像素电路电极的导电像素电极和在像素电极的外边缘处的非导电像素定义层。 复合层基于导电聚合物形成，通过将导电聚合物的电阻特性改变为非导电聚合物形成像素层，其余部分形成为像素电极。
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Patent Agency Ranking
公开(公告)号：KR101395906B1
公开(公告)日：2014-05-19
申请号：KR1020120153257
申请日：2012-12-26
Applicant: 전자부품연구원 , 중앙대학교 산학협력단
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78633 , H01L29/4908 , H01L29/66742 , H01L29/7869
Abstract: The present invention relates to a thin film transistor and a manufacturing method thereof. A thin film transistor includes a gate electrode which is formed by stacking at least two gate materials on a substrate, a gate insulating layer which is formed in the upper part of the gate electrode, an oxide semiconductor layer which is formed in the upper part of the gate insulating layer, a source/drain electrode which is respectively connected to at least part of the oxide semiconductor layer. A reflection structure which has UV reflectivity higher than that of the material of the gate electrode is formed in the upper part of the gate electrode.
Abstract translation: 薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法。 薄膜晶体管包括：栅极电极，其通过在基板上堆叠至少两个栅极材料形成;栅极绝缘层，形成在栅电极的上部;形成在栅电极的上部的氧化物半导体层 栅极绝缘层，分别连接到氧化物半导体层的至少一部分的源极/漏极电极。 在栅电极的上部形成有具有高于栅电极的材料的UV反射率的反射结构。
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公开(公告)号：KR101392873B1
公开(公告)日：2014-05-09
申请号：KR1020120120538
申请日：2012-10-29
Applicant: 전자부품연구원
Abstract: Disclosed is a method for forming a nanostructure using various kinds of solvents. The method for forming the nanostructure using the various kinds of solvents according to one embodiment of the present invention includes: a first step of preparing a first solution by dissolving a first solute in a first solvent; a second step of preparing a second solution by dissolving a second solute in a second solvent; a third step of preparing a hybrid solution by stirring the first solution and the second solution; and a fourth step of forming the nanostructure using the hybrid solution.
Abstract translation: 公开了使用各种溶剂形成纳米结构的方法。 根据本发明的一个实施方案，使用各种溶剂形成纳米结构的方法包括：通过将第一溶质溶解在第一溶剂中制备第一溶液的第一步骤; 通过将第二溶质溶解在第二溶剂中制备第二溶液的第二步骤; 通过搅拌第一溶液和第二溶液来制备混合溶液的第三步骤; 以及使用该混合溶液形成纳米结构的第四步骤。
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公开(公告)号：KR101358286B1
公开(公告)日：2014-02-12
申请号：KR1020120134389
申请日：2012-11-26
Applicant: 전자부품연구원 , 서울대학교산학협력단
IPC: H02N3/00
Abstract: The present invention relates to an energy conversion device using a change of the contact surface with liquid and more specifically, to a device and a method of converting mechanical energy to electrical energy by applying the opposite phenomenon of electrowetting phenomenon. Provided is the energy conversion device which changes the contact surface with liquid between a pair of electrodes and applies the change of the contact surface therewith to generate electrical energy so that the present invention simplifies the device, reduces manufacturing costs and has less failure because the device does not require patterned electrodes on a clogging phenomenon, a lubricating layer or complex channels.
Abstract translation: 本发明涉及一种使用与液体的接触面的变化的能量转换装置，更具体地，涉及通过应用电润湿现象的相反现象将机械能转换为电能的装置和方法。 提供了能量转换装置，其在一对电极之间改变与液体的接触表面，并且施加与其接触表面的变化以产生电能，使得本发明简化了装置，降低了制造成本并且具有较少的故障，因为装置 不需要图案电极堵塞现象，润滑层或复合通道。
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公开(公告)号：KR101199288B1
公开(公告)日：2012-11-09
申请号：KR1020110045586
申请日：2011-05-16
Applicant: 전자부품연구원 , 엘에스전선 주식회사
Abstract: PURPOSE: A polymer composite for producing insulating material of high voltage direct current cable for transmission is provided to minimize insulation voltage degradation which occurs dielectric breakdown at voltage lower than initially designed dielectric breakdown voltage. CONSTITUTION: A polymer composite for producing insulating material of high voltage direct current cable comprises a graphite nanofiber partially carbonized by 80-0.01 %, or graphite nanoparticles partially carbonized to 80-0.01%. A manufacturing method the polymer composite comprises a step of manufacturing a graphite nanofiber partially carbonized by carbonizing the graphite nano fiber; a step of manufacturing a polymer composite comprising the partially carbonized graphite nanofiber. [Reference numerals] (AA) Embodiment; (BB) Comparative embodiment
Abstract translation: 目的：提供一种用于生产用于传输的高压直流电缆绝缘材料的聚合物复合材料，用于最大限度地降低绝缘电压降低，这种电压降低低于最初设计的介电击穿电压。 构成：用于制造高压直流电缆绝缘材料的聚合物复合材料包括部分碳化80-0.01％的石墨纳米纤维，或部分碳化至80-0.01％的石墨纳米纤维。 聚合物复合材料的制造方法包括通过碳化石墨纳米纤维来制造部分碳化的石墨纳米纤维的步骤; 制造包含部分碳化石墨纳米纤维的聚合物复合材料的步骤。 （附图标记）（AA）实施例; （BB）比较实施例
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公开(公告)号：KR101043956B1
公开(公告)日：2011-06-24
申请号：KR1020090070326
申请日：2009-07-31
Applicant: 전자부품연구원
IPC: H01R4/58
CPC classification number: H01L24/27 , H01L21/6835 , H01L24/29 , H01L2221/68359 , H01L2224/2929 , H01L2224/29299 , H01L2224/83101 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01079 , H01L2924/14 , H01L2924/15788 , H01R4/04 , H01R13/2414 , H01R43/007 , Y10T428/24612 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2924/00
Abstract: 미세피치를 갖는 두 전극을 반복압착하여 연결할 수 있는 경박단소화된 다목적 비등방성 입자배열체 및 그 제조방법이 제안된다. 제안된 비등방성 입자배열체는 탄성 고분자층 및 탄성 고분자층내에 상부 및 하부가 노출되도록 위치하는 탄성 도전체 또는 탄성 열전도체를 포함한다.
비등방성, 열전도, 전기전도, 커넥터
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