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公开(公告)号：KR100338667B1
公开(公告)日：2002-05-30
申请号：KR1020000004292
申请日：2000-01-28
Applicant: 한국과학기술연구원
IPC: B23K26/364 , B23K26/40
Abstract: 본 발명은 레이저를 이용한 다이아몬드막의 가공에 있어서, 상기 다이아몬드막의 밑면에 열전도도가 작은 저 열전달 밑판을 위치시켜 다이아몬드막과의 열전달이 억제되도록 하고, 일정한 가공분위기 하에서 레이저빔을 상기 다이아몬드막의 표면에 초점이 형성되도록 하여 다이아몬드막을 가공하고, 가공이 진행됨에 따라 상기 레이저빔의 초점이 형성되는 위치를 밑으로 이동하며 레이저빔을 주사하는 것으로 이루어지는 레이저를 이용한 다이아몬드막의 가공 방법을 제공하며, 또한, 상기 다이아몬드막의 밑면에 가열판을 위치시키고 상기 가열판으로 다이아몬드막에 열이 공급되도록 하고, 일정한 가공분위기 하에서 레이저빔을 상기 다이아몬드막의 표면에 초점이 형성되도록 하여 다이아몬드막을 가공하고, 가공이 진행됨에 따라 상기 레이저� ��의 초점이 형성되는 위치를 밑으로 이동하며 레이저빔을 주사하는 것으로 이루어지는 레이저를 이용한 다이아몬드막의 가공 방법을 제공한다. 본 발명에 의하면 고출력의 레이저를 사용하지 않고도 다이아몬드막을 효과적으로 가공하는 것이 가능하며, 특히 다이아몬드막의 레이저 절단시 종래의 한계를 넘어 절단 종횡비를 증가시킬 수 있다. 따라서, 저출력의 레이저를 사용한 가공이 가능하여, 다이아몬드막의 손실이 과다하게 되는 것을 억제할 수 있고, 적은 가공 비용으로 양호한 가공품질을 얻는 것이 가능하다.
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公开(公告)号：KR1020010076875A
公开(公告)日：2001-08-17
申请号：KR1020000004292
申请日：2000-01-28
Applicant: 한국과학기술연구원
IPC: B23K26/364 , B23K26/40
CPC classification number: B23K26/364 , B23K26/40
Abstract: PURPOSE: A process for processing a diamond film by disposing a plate having low heat conductivity at the lower part of a diamond film and irradiating a laser beam to form the focus on the surface of the diamond film is provided, which can inhibit excess loss of the diamond film and obtain excellent processing quality at low cost. CONSTITUTION: The titled diamond film is processed by the following process consisting of: disposing a plate having low heat conductivity at the lower part of a diamond film to inhibit heat transfer to a diamond film, irradiating a laser beam to form the focus on the surface of the diamond film and moving the position of the focus of the laser beam to the lower part due to the progress of the processing.
Abstract translation: 目的：提供一种通过在金刚石膜的下部设置具有低导热性的板并照射激光束以在金刚石膜的表面上形成焦点来处理金刚石膜的方法，其可以抑制金刚石膜的过度损耗 金刚石薄膜，并以低成本获得优良的加工质量。 构成：标题金刚石膜通过以下工艺处理，该方法包括：在金刚石膜的下部设置具有低导热性的板，以抑制向金刚石膜的热传递，照射激光束以在表面上形成焦点 并且由于处理的进行而将激光束的焦点的位置移动到下部。
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Patent Agency Ranking
公开(公告)号：KR1019890004978B1
公开(公告)日：1989-12-02
申请号：KR1019870009802
申请日：1987-09-04
Applicant: 한국과학기술연구원
IPC: H01L29/78
Abstract: The IC includes a NMOS formed on P-type wall region (11) in P-type base plate (10) and a PMOS formed on N-type base plate (10). Thin gate silicon dioxide layers (16,26) are grown on NMOS and PMOS regions. N-type buried layer (18) is formed by injecting ion in N- MOS layer and multi-crystal silicon layers (17,27) are grown by vaporising on gate silicon dioxides (16,26). Source region (13) and drain region (14) of NMOS and source and drain regions (24) of PMOS are formed by injecting N and P type impurities on NMOS and PMOS respectively.
Abstract translation: IC包括形成在P型基板（10）中的P型壁区域（11）上的NMOS和形成在N型基板（10）上的PMOS。 在NMOS和PMOS区域上生长薄栅二氧化硅层（16,26）。 通过在N-MOS层中注入离子形成N型掩埋层（18），并通过在栅极二氧化硅上蒸发生长多晶硅层（17,27）（16,26）。 通过在NMOS和PMOS上分别注入N和P型杂质，形成NMOS的源极区（13）和漏极区（14）以及PMOS的源极和漏极区（24）。
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公开(公告)号：KR1020030040697A
公开(公告)日：2003-05-23
申请号：KR1020010071113
申请日：2001-11-15
IPC: C25D3/38
Abstract: PURPOSE: A copper electroplating solution for use in Damascene process is provided, which can fill micro patterned trench and via without defects. CONSTITUTION: The copper electroplating solution comprises 10 to 5000 ppm of polyethylene glycol as inhibitor, 1 to 1000 ppm of one or more of sulfur compounds selected from mercapto compound having aqueous radical of organic acid and other sulfur compounds, and 1 to 1000 ppm of Janus Green B (diethyl safranine azo dimethyl aniline) and/or coumarin as leveler, wherein the molecular weight of polyethylene glycol is greater than 3000, the mercapto compound is 3-mercapto-1-propanesulfonate; the other sulfur compounds except above mercapto compounds are selected from sodium sulfide, sodium sulfite, sodium thiosulfide, sodium hydrosulfide, benzenedisulfonate, benzenedithiol, benzenesulfinate, benzensulfonamide, benzenesulfonic acid and benzenesulfonyl chloride.
Abstract translation: 目的：提供用于镶嵌工艺的铜电镀溶液，可以填充微图案化的沟槽和通孔，无缺陷。 构成：铜电镀液含有10〜5000ppm的聚乙二醇作为抑制剂，1〜1000ppm的一种或多种选自具有有机酸和其它硫化合物的水溶液的巯基化合物的硫化合物和1〜1000ppm的Janus 绿B（二乙基茴香胺偶氮二甲基苯胺）和/或香豆素作为矫光剂，其中聚乙二醇的分子量大于3000，巯基化合物为3-巯基-1-丙磺酸盐; 除巯基化合物以外的其它硫化合物选自硫化钠，亚硫酸钠，硫代硫化钠，硫氢化钠，苯二磺酸盐，苯二硫醇，苯亚磺酸盐，苯磺酰胺，苯磺酸和苯磺酰氯。
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公开(公告)号：KR1020020087640A
公开(公告)日：2002-11-23
申请号：KR1020010026486
申请日：2001-05-15
Applicant: 한국과학기술연구원
IPC: G11B5/39
CPC classification number: B82Y25/00 , B82Y40/00 , H01F41/307 , H01L43/12 , Y10T29/49044
Abstract: PURPOSE: A magnetic tunnel junction device and a thermal anneal method thereof are provided to improve the TMR(Tunneling Magnetoresistance) rate and optimize the characteristics of the device in a shorter time more effectively by reducing the bent of an oxide layer(Tunnel Barrier Layer). CONSTITUTION: A magnetic tunnel junction device includes an anti-ferromagnetic layer formed of anti-ferromagnetic material, a fixed layer formed on the anti-ferromagnetic layer with a ferromagnetic material, a tunnel barrier layer(16) formed on the fixing layer with an electrically insulating material, and a free layer formed on the tunnel barrier layer with a ferromagnetic material, wherein the magnetic tunnel junction device is subject to rapid thermal anneal by heating at a temperature of 200-400°C for 10sec or less and cooled for 6min or less.
Abstract translation: 目的：提供磁隧道结器件及其热退火方法，以通过减少氧化层（隧道屏障层）的弯曲来更有效地提高TMR（隧道磁阻）速率并在更短的时间内优化器件的特性， 。 构造：磁性隧道结装置包括由反铁磁材料形成的反铁磁层，在具有铁磁材料的反铁磁层上形成的固定层，在电气上形成在固定层上的隧道势垒层（16） 绝缘材料和形成在隧道势垒层上的铁磁材料的自由层，其中磁性隧道结装置通过在200-400℃的温度下加热10秒以上并冷却6分钟进行快速热退火，或 减。
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公开(公告)号：KR100313703B1
公开(公告)日：2001-11-15
申请号：KR1019990015822
申请日：1999-05-01
Applicant: 한국과학기술연구원
IPC: B23K26/02
Abstract: 본발명은초점이형성된레이저를이용한굽은경질표면의평탄화방법으로서, 렌즈에투과되어초점이형성된레이저빔을평탄화시키려는물질의표면중 높은부위에위치시키고, 표면전체에주사하여평탄하게한 후, 레이저의초점을낮은부위쪽으로점진적으로이동시키며레이저빔을주사하여평평도를증가시키는경질표면의평탄화방법이다. 본발명에의하면다이아몬드,-BN, BC와같이단단한물질의표면을연마하여웨이퍼형태로용이하게가공할수 있으며, 표면이부분적으로돌출한경우뿐만아니라표면이전체적으로곡률을가지고굽어있는경우에도본 발명을적용할수 있다.
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公开(公告)号：KR1020000072884A
公开(公告)日：2000-12-05
申请号：KR1019990015822
申请日：1999-05-01
Applicant: 한국과학기술연구원
IPC: B23K26/02
Abstract: PURPOSE: A bent hard surface smoothing method using a laser with a focus is provided to remove an irregular portion selectively and promptly. CONSTITUTION: A laser(12) with a focus formed by a lens(13) is scanned on the rough surface. Herein, the degree of focus and the laser influence of the scanned laser beam are varied corresponding to positions and so is the removal speed of the substances on the surface. The position becomes higher, and then the removal of the substances grows faster. After the removal of the high position, the focus of the laser is lowered gradually to scan the entire of the surface. According to the processing with the laser, the degree of smoothness is enhanced.
Abstract translation: 目的：提供一种使用聚焦激光的弯曲硬表面平滑方法，以有选择且及时地去除不规则部分。 构成：在粗糙表面上扫描由透镜（13）形成的焦点的激光（12）。 这里，扫描的激光束的焦点和激光影响随着位置而变化，并且物质在表面上的去除速度也是如此。 位置变得更高，然后物质的去除增长得更快。 在去除高位置之后，激光的焦点逐渐降低以扫描整个表面。 根据激光加工，光滑度得到提高。
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