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公开(公告)号：KR1020100063312A
公开(公告)日：2010-06-11
申请号：KR1020080121776
申请日：2008-12-03
Applicant: 한국과학기술연구원
CPC classification number: C04B41/91 , C04B41/4535 , C04B41/455 , C04B41/89 , C04B2235/427
Abstract: PURPOSE: A ceramic body coated with a diamond film, and a manufacturing method thereof are provided to induce the strong mechanical bond between the ceramic body and the diamond film by forming uneven embossments. CONSTITUTION: A manufacturing method of a ceramic body coated with a diamond film comprises the following steps: forming a surface layer by spreading a mixture composition including ceramic particles and a matrix phase on the ceramic body; forming uneven embossments on the surface layer by removing the matrix phase; and adhering the diamond film on the surface layer. The surface layer contains 50~90% of ceramic particles. The surface layer is formed by a bonding reaction, a sintering reaction, or a crystallization reaction. The matrix phase is removed by a wet etching, a dry etching, or a sand blast.
Abstract translation: 目的：提供一种涂有金刚石薄膜的陶瓷体及其制造方法，通过形成不均匀的压纹来诱导陶瓷体与金刚石薄膜之间的强机械结合。 构成：涂覆有金刚石膜的陶瓷体的制造方法包括以下步骤：通过将包括陶瓷颗粒和基质相的混合物组合物铺展在陶瓷体上而形成表面层; 通过去除基体相在表面层上形成不均匀的凸起; 并将金刚石膜粘附在表面层上。 表层含有50〜90％的陶瓷颗粒。 表面层通过结合反应，烧结反应或结晶反应形成。 通过湿法蚀刻，干蚀刻或喷砂除去基质相。
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公开(公告)号：KR1020090124111A
公开(公告)日：2009-12-03
申请号：KR1020080050117
申请日：2008-05-29
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A process for growing single crystal diamond is provided to minimize the temperature difference between diamonds and minimize the temperature change by the plasma contact. CONSTITUTION: The pit(23) having the intaglio pattern corresponding to the mold substrate(21) to the crystalline morphology of the diamond seed(24) is formed. In the diamond seed, the growth is included in the pit of the mold substrate. The quick freeze part(22) controls the temperature of the mold substrate. The mold whole of the substrate is relatively uniformly contacted with the plasma(20). The intaglio pattern of the pit formed in the mold the inverted pyramid or the cubic shape. The diamond seed has the octahedron shape.
Abstract translation: 目的：提供生长单晶金刚石的方法，以最小化金刚石之间的温差，并通过等离子体接触使温度变化最小化。 构成：形成具有与模具基板（21）相对应的凹版图案的钻孔（23）与金刚石晶粒（24）的结晶形态。 在金刚石种子中，生长被包括在模具基材的凹坑中。 快速冷冻部件（22）控制模具基板的温度。 基板的模具整体与等离子体（20）相对均匀地接触。 在模具中形成的凹坑的凹雕图案是倒金字塔形或立方体形。 钻石种子具有八面体形状。
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公开(公告)号：KR1020040005105A
公开(公告)日：2004-01-16
申请号：KR1020020039401
申请日：2002-07-08
Applicant: 한국과학기술연구원
IPC: C23C16/22
CPC classification number: C23C16/279 , B23B27/148 , B23B2228/04 , C23C16/271 , C23C16/274
Abstract: PURPOSE: A method for refining particle size of deposited diamond film, particularly, particle size of the edge of the cutting tool by consistently applying negative bias to the cutting tool from the outside in the diamond film deposition process is provided, and a diamond film deposited cutting tool used in the method is provided. CONSTITUTION: The method comprises the process of depositing a diamond film on a cutting tool matrix using vapor chemical deposition and applying a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time, thereby coating on the surface of the tool a diamond film which has fine particle size on the edge compared to the central part of the tool. In a cutting tool on the surface of which diamond film is deposited using vapor chemical deposition, the diamond film deposited cutting tool is characterized in that a diamond film which has a micro particle size of 0.1 to 5 μm and has finer particle size on the edge compared to the central part of the same surface of the tool is coated on the surface of the tool by impressing a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time as the diamond film is being deposited on the cutting tool.
Abstract translation: 目的：提供一种通过在金刚石膜沉积工艺中从外部一致地向切割工具施加负偏压来提纯沉积金刚石膜的颗粒尺寸，特别是切割工具的边缘的粒度的方法，并且沉积金刚石膜 提供了该方法中使用的切削工具。 构成：该方法包括使用蒸汽化学沉积在切割工具基体上沉积金刚石膜并向切割工具施加负偏压的过程，使得比其它电极低的偏压从外部施加到切割工具的表面 同时，与工具的中心部分相比，在工具的表面上涂覆了具有细粒度的金刚石膜。 在使用蒸气化学沉积沉积金刚石膜的表面上的切割工具中，金刚石膜沉积切割工具的特征在于，金刚石膜的微粒径为0.1至5μm，并且在边缘上具有更细的粒径 与工具的相同表面的中心部分相比，通过向切割工具施加负偏压而涂覆在工具的表面上，使得比其他电极低的偏压从外部施加到切割工具的表面 同时金刚石膜被沉积在切割工具上。
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公开(公告)号：KR101919487B1
公开(公告)日：2018-11-19
申请号：KR1020170117578
申请日：2017-09-14
Applicant: 한국과학기술연구원
IPC: H01L31/0236 , H01L31/18 , H01L21/311 , H01L21/02
Abstract: 본발명은반도체기판을텍스쳐링하는방법과, 이방법에의해제조된반도체기판, 그리고, 이러한반도체기판을포함하는태양전지를개시하고있다. 본발명의일실시예는, 반도체기판상에금속나노입자를형성하는금속나노입자형성단계와, 상기반도체기판을에칭하는제1 식각단계와, 상기금속나노입자를제거하는금속나노입자제거단계, 그리고, 상기제1 식각단계에서에칭된반도체기판을에칭하여나노구조체를형성하는제2 식각단계를포함하는반도체기판을텍스쳐링하는방법을제공한다.
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15.发明授权
公开(公告)号：KR101743019B1
公开(公告)日：2017-06-05
申请号：KR1020150015353
申请日：2015-01-30
Applicant: 한국과학기술연구원
CPC classification number: B24D18/00 , C01B31/36 , C01B32/956
Abstract: 고온내산화성이우수한초경도탄화붕소박막은, 탄화붕소층과탄화규소층이교대로반복적으로적층된구조를갖는다. 이에따라, 탄화붕소박막의고온내산화성이향상되어절삭공구등 내마모공구의코팅재료로사용가능하다.
Abstract translation: 高温下的耐氧化性优异的碳化硼碳化物薄膜具有交替反复层叠碳化硼层和碳化硅层的结构。 结果，碳化硼薄膜在高温下具有改善的抗氧化性，并且可以用作用于诸如切削工具的耐磨工具的涂层材料。
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Patent Agency Ranking
公开(公告)号：KR1020160091027A
公开(公告)日：2016-08-02
申请号：KR1020150011097
申请日：2015-01-23
Applicant: 한국과학기술연구원
IPC: H01L31/0749 , H01L31/0236
CPC classification number: Y02E10/50 , H01L31/0749 , H01L31/02366 , H01L31/0322
Abstract: 폴리이미드기판구조는, 폴리이미드기판; 폴리이미드기판위에형성된금속전극층; 폴리이미드기판의양 표면중 적어도하나의면에형성되고, 열팽창률이금속전극층의열팽창률보다작은물질로구성되는열팽창억제층; 폴리이미드기판및 열팽창억제층사이의계면접찹력을향상시키기위해폴리이미드기판및 열팽창억제층사이에형성되는계면접착층; 및열팽창억제층의손상을억제하기위해열팽창억제층상에형성되는캡핑층을포함한다. 이러한폴리이미드기판구조는박막태양전지에적용할수 있고, 이에따라, 폴리이미드의유효열팽창률을감소시켜서태양전지셀의균열및 박리현상을억제하고, 광흡수층과폴리이미드기판간열팽창불일치로인해발생하는기판의휨 현상을완화할수 있다. 이를통해, 유연박막태양전지제조공정의불량률감소, 생산성향상을기대할수 있고, 광전변환효율열화를최소화할수 있다.
Abstract translation: 聚酰亚胺基板结构包括：聚酰亚胺基板; 形成在聚酰亚胺基板上的金属电极层; 所述热膨胀抑制层形成在所述聚酰亚胺基板的至少一个相对表面上并且由具有低于所述金属电极层的热膨胀率的热膨胀率的材料形成; 在所述聚酰亚胺基板和所述热膨胀抑制层之间形成的界面粘合层，以改善所述聚酰亚胺基板和所述热膨胀抑制层之间的界面粘合力; 以及形成在热膨胀抑制层上以抑制对热膨胀抑制层的损伤的覆盖层。 聚酰亚胺基板结构可以应用于薄膜太阳能电池，因此，聚酰亚胺的有效热膨胀率降低，从而可以抑制太阳能电池的裂纹和分层现象，并且生成基板的弯曲 由于光吸收层和聚酰亚胺基板的热膨胀率之间的差异可以减轻。 由此，能够期待柔性薄膜太阳能电池的制造工序的误差率的降低，生产率的提高，能够使光电转换效率的降低最小化。
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公开(公告)号：KR101562950B1
公开(公告)日：2015-10-23
申请号：KR1020140018402
申请日：2014-02-18
Applicant: 한국과학기술연구원
Abstract: 본발명은초경모재상에코팅되는다이아몬드박막을제 1 박막층과제 2 박막층의이중층으로구성하고, 제 1 박막층과제 2 박막층의압축잔류응력을제어함으로써다이아몬드박막과초경모재사이의기계적결합력을향상시킴과함께다이아몬드박막의박리현상을억제하여다이아몬드코팅공구상에코팅되는다이아몬드박막의두께를증가시킬수 있는다이아몬드코팅공구및 그제조방법에관한것으로서, 본발명에따른다이아몬드코팅공구제조방법은초경모재상에제 1 박막층과제 2 박막층을순차적으로증착하며, 상기제 1 박막층과제 2 박막층은결정상의다이아몬드박막이며, 상기제 1 박막층은제 2 박막층에대비하여상대적으로큰 압축잔류응력을갖도록증착되고, 상기제 2 박막층은제 1 박막층에대비하여상대적으로작은압축잔류응력을갖도록증착되는것을특징으로한다.
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18.发明公开
公开(公告)号：KR1020140110186A
公开(公告)日：2014-09-17
申请号：KR1020130023277
申请日：2013-03-05
Applicant: 한국과학기술연구원
CPC classification number: C23C16/342 , C23C14/0647 , C23C14/345
Abstract: A method of manufacturing a cubic boron nitride (c-BN) thin film may include applying a pulse type bias voltage; and forming the c-BN thin film by making an ion collide with the substrate using the pulse type bias voltage. In this case, a ratio of an on/off duration time of the pulse type bias voltage may be adjusted to control the residual compression stress of the c-BN thin film. The residual compression stress applied to the thin film is minimized using a pulse type voltage as a negative bias voltage applied to the substrate, and the c-BN thin film is deposited in an area with low ion energy by increasing a ratio of ion/neutron by adjusting the ratio of the on/off duration time of the pulse type voltage.
Abstract translation: 立方氮化硼（c-BN）薄膜的制造方法可以包括：施加脉冲型偏置电压; 以及通过使用脉冲型偏压使离子与基板碰撞来形成c-BN薄膜。 在这种情况下，可以调节脉冲型偏置电压的开/关持续时间的比率，以控制c-BN薄膜的残余压缩应力。 施加到薄膜上的残余压缩应力使用脉冲型电压作为施加到衬底的负偏置电压被最小化，并且通过增加离子/中子的比例将c-BN薄膜沉积在具有低离子能量的区域中 通过调节脉冲型电压的开/关持续时间的比率。
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公开(公告)号：KR101352537B1
公开(公告)日：2014-01-21
申请号：KR1020120061357
申请日：2012-06-08
Applicant: 한국과학기술연구원
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022483 , H01L31/1884 , Y02E10/50
Abstract: 본 발명은 Se 또는 S계 광흡수층 기반 박막태양전지에 있어서 하부 투명전극층의 구조를 제어함으로써 상부 투명전극층의 결정성 및 전기적 특성을 향상시킬 수 있는 Se 또는 S계 박막태양전지 및 그 제조방법에 관한 것으로서, 본 발명에 따른 Se 또는 S계 박막태양전지는 광흡수층 및 전면 투명전극층을 구비하는 Se 또는 S계 박막태양전지에 있어서, 상기 전면 투명전극층은 하부 투명전극층과 상부 투명전극층으로 구성되며, 상기 하부 투명전극층은 비정질 구조의 산화물계 박막으로 이루어지는 것을 특징으로 한다.
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公开(公告)号：KR1020130137810A
公开(公告)日：2013-12-18
申请号：KR1020120061357
申请日：2012-06-08
Applicant: 한국과학기술연구원
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022483 , H01L31/1884 , Y02E10/50
Abstract: The present invention relates to an Se or S based thin film solar cell and a manufacturing method thereof, capable of improving the crystallization and electrical properties of a top transparent electrode layer by controlling the structure of a bottom transparent electrode layer in an Se or S based light absorption layer-based thin film solar cell. The Se or S based thin film solar cell according to the present invention includes a light absorption layer and a front transparent electrode layer. The front transparent electrode layer is composed of a bottom transparent electrode layer and a top transparent electrode layer. The bottom transparent electrode layer is composed of an oxide thin film of an amorphous structure.
Abstract translation: 本发明涉及一种通过控制基于Se或S的底部透明电极层的结构而能够改善顶部透明电极层的结晶和电性能的Se或S基薄膜太阳能电池及其制造方法 基于光吸收层的薄膜太阳能电池。 根据本发明的Se或S基薄膜太阳能电池包括光吸收层和前透明电极层。 前透明电极层由底部透明电极层和顶部透明电极层构成。 底部透明电极层由非晶结构的氧化物薄膜构成。
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