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公开(公告)号：KR1020010001896A
公开(公告)日：2001-01-05
申请号：KR1019990021389
申请日：1999-06-09
Applicant: 한국과학기술연구원
IPC: C23C16/52
CPC classification number: C23C16/272 , C23C16/503 , H01J37/32009 , H01J37/32541
Abstract: PURPOSE: An apparatus for crystallizing diamond film by DC PACVD is provided for maximizing degree of crystallization and uniformity and minimizing temperature differences between anodes to eliminate unstability of the apparatus. CONSTITUTION: The DC PACVD apparatus has seven anodes each of them being fixed to top plate (11) connected with a vacuum chamber (1) by O-ring (12). The anode is jointed to copper block (6) by suspending bar (5) and consequently to DC power supply (8) through ballast resistance (9). The anode has a smaller diameter than for such suspending bar to prevent heat of anode from transferring into such copper block to effectively maintain temperature of the anode to 2000 deg.C or more.
Abstract translation: 目的：提供用于通过DC PACVD使金刚石膜结晶的装置，用于使结晶度和均匀性最大化并使阳极之间的温度差最小化，以消除装置的不稳定性。 构成：DC PACVD装置具有七个阳极，每个阳极固定到通过O形环（12）与真空室（1）连接的顶板（11）。 阳极通过悬挂杆（5）连接到铜块（6），从而通过镇流电阻（9）连接到直流电源（8）。 阳极的直径小于这种悬挂杆的直径，以防止阳极的热量转移到这种铜块中，以有效地将阳极的温度维持在2000摄氏度或更高。
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公开(公告)号：KR100128680B1
公开(公告)日：1998-04-02
申请号：KR1019950003755
申请日：1995-02-25
Applicant: 한국과학기술연구원
Abstract: A complete single crystal diamond film was grown minimizing a mismatch between a plate and diamond particles. Directional distribution of the diamond nucleus formed on the plate utilizing a virus enhanced nucleus forming process, is maximized at a same direction with Si plate, diamond particles corresponded to a direction of Si are selectively grown. In case of (100)Si plate, diamond particles being perpendicular to a direction of lattice from the plate are selectively grown, the grown diamond particles has a same direction with the plate. The (100) face is two-dimensionally grown on the diamond film to minimize a intensity of illumination. The surface of the diamond film is paralleled with the plate.
Abstract translation: 生长完整的单晶金刚石膜，使板和金刚石颗粒之间的失配最小化。 利用病毒增强的核形成过程在板上形成的金刚石核的定向分布在与Si板相同的方向上最大化，对应于Si方向的金刚石颗粒被选择性地生长。 在（100）Si板的情况下，选择性地生长垂直于板格方向的金刚石颗粒，生长的金刚石颗粒与板具有相同的方向。 （100）面在金刚石膜上二维生长以最小化照明强度。 金刚石膜的表面与板平行。
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公开(公告)号：KR1019960014905B1
公开(公告)日：1996-10-21
申请号：KR1019930023549
申请日：1993-11-06
Applicant: 한국과학기술연구원
IPC: C01B31/06
Abstract: The diamond is prepared by DC discharge plasma chemical vapor deposition method which comprises (a) generating plasma between anode and cathode of the reaction vessel, (b) decomposing the reactive gas by plasma, (c) manufacturing diamond on the substrate. This CVD method keeps generating stable plasma by blocking heat flow from cathode suspension equipment and maintaining cathode temperature up to more than the forming temperature of the solid phase carbon. The high melting point carbides such as tungsten carbide, tantalum carbide, titanium carbide are used for cathode material.
Abstract translation: 通过直流放电等离子体化学气相沉积法制备金刚石，其包括（a）在反应容器的阳极和阴极之间产生等离子体，（b）通过等离子体分解反应气体，（c）在基底上制造金刚石。 该CVD方法通过阻止来自阴极悬浮设备的热流并保持阴极温度高于固相碳的形成温度来保持产生稳定的等离子体。 用于阴极材料的碳化钨，碳化钽，碳化钛等高熔点碳化物。
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公开(公告)号：KR1019960010087B1
公开(公告)日：1996-07-25
申请号：KR1019930032330
申请日：1993-12-31
Applicant: 한국과학기술연구원
IPC: C01B31/06
Abstract: The diamond film is deposited by decomposing reaction gas, the mixture of hydrogen, 1-10% methane and 0-5% oxygen or hydrogen and 1-30% carbon monoxide, with the plasma generated between the negative electrode, the multi-negative electrode formed by arranging the negative electrode of the plural number connected to the independent direct current, and the positive electrode inside of reactor. The synthesis pressure is maintained at 100-500Torr in order to deposit the diamond film with high speed by generating a large plasma between both electrodes.
Abstract translation: 金刚石膜通过分解反应气体，氢气，1-10％甲烷和0-5％氧气或氢气和1-30％一氧化碳的混合物沉积，在负极，多负极之间产生等离子体 通过配置连接到独立直流电的多个负极和反应器内部的正电极而形成。 合成压力保持在100-500Torr，以便通过在两个电极之间产生大的等离子体来高速沉积金刚石膜。
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Patent Agency Ranking
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公开(公告)号：KR1019950008924B1
公开(公告)日：1995-08-09
申请号：KR1019930005996
申请日：1993-04-09
Applicant: 한국과학기술연구원
IPC: C23C16/26
Abstract: The manufacturing method for a free standing diamond film comprises (A) forming by CVD(chemical vapor deposition) a monolithic diamond film(2) on upper(1a) and lateral(1c) sides of a substrate(1) where the peripheral part(1b) of the upper side has a circular arc-like curvature and (B) making a free standing diamond film by separating the diamond film from the substrate-diamond film monolith, while protecting the substrate from damage caused by shrinkage difference between substrate and diamond film occuring from cooling.
Abstract translation: 独立金刚石膜的制造方法包括：（A）通过CVD（化学气相沉积）在基板（1）的上（1a）和侧（1c）侧上形成单片金刚石膜（2），其中周边部分 1b）具有圆弧状曲率，（B）通过将金刚石膜与基底 - 金刚石膜整料分开来制造自立式金刚石膜，同时保护基板免受基板与金刚石之间的收缩差异的损害 薄膜从冷却发生。
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公开(公告)号：KR1019940011350A
公开(公告)日：1994-06-21
申请号：KR1019920022104
申请日：1992-11-23
Applicant: 한국과학기술연구원
IPC: C01B31/06
Abstract: 본 발명은 기상으로부터 합성된 다이아몬드의 성장시 빠른 성장속도를 갖는 입자의 결정방향을 조절하여 다이아몬드의 집합조직(texture) 방향과 박막의 표면을 구성하는 성장면(facet)의 종류를 조절하는 방법에 관한 것이다.
본 발명은 기상합성방법을 이용하여 다이아몬드 박막을 형성함에 있어서 증착온도 750℃에서 l100℃의 범위에서 수소와 탄화수소의 혼합기체에 산소를 소량 첨가하여 빠른 성장속도를 갖는 다이아몬드 입자의 결정방향을 조절하여 집합조직의 방향과 박막표면 성장면의 종류를 변화시키도록 구성된다.
본 발명은 다이아몬드의 박막에서 잔류응력, 내마모성, 열전도성, 전자특성등의 여러특성에 영향을 미치는 집합조직의 방향과 성장면의 종류를 임의로 변화시킬 수 있다는 이점이 있다.
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