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公开(公告)号：KR1019920007336B1
公开(公告)日：1992-08-31
申请号：KR1019890012681
申请日：1989-09-01
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: The method for using a silicon mask to form the epitaxial layers with different growth layer structures on one substrate by using a molecular beam epitaxy technique comprises the steps of forming a first epitaxial layer (16) by using a silicon mask (12) to deposit an Al layer (17) thereon, removing the silicon mask (12) to grow a second epitaxial layer (18) and lifting-off the Al and epitaxial layer (17,18) by etching the Al layer (17) by using a chemical method, thereby obtaining the epitaxial layers with different structures to reduce the manufacturing time.
Abstract translation: 通过使用分子束外延技术在一个衬底上使用硅掩模来形成具有不同生长层结构的外延层的方法包括以下步骤：通过使用硅掩模（12）形成第一外延层（16）以沉积 Al层（17），通过使用化学方法蚀刻Al层（17），去除硅掩模（12）以生长第二外延层（18）并提升Al和外延层（17,18） 从而获得具有不同结构的外延层以减少制造时间。
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公开(公告)号：KR1019920004365B1
公开(公告)日：1992-06-04
申请号：KR1019890012680
申请日：1989-09-01
Applicant: 한국전자통신연구원
IPC: H01L27/04
Abstract: The method for forming an ohmic contact with buried type to manufacture a modulated doping FET (MODFET) comprises etching the source and drain region to the two dimensional electron gas channel layer (12a) to form a large spacer (20) and depositing a metallic film thereon to form a buried ohmic contact (15), thereby the layer (12a) and the contact (15) being connected directly. The method need not control the complex reaction mechanism between the metal of the contact and the layer made of different materials. The method controls the length of a channel exactly.
Abstract translation: 用于形成具有掩埋型的欧姆接触以制造调制掺杂FET（MODFET）的方法包括将源极和漏极区域蚀刻到二维电子气体沟道层（12a）以形成大的间隔物（20）并沉积金属膜 在其上形成埋入的欧姆接触（15），由此层（12a）和触点（15）直接连接。 该方法不需要控制接触金属与不同材料层之间的复杂反应机理。 该方法精确地控制通道的长度。
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Patent Agency Ranking
公开(公告)号：KR1019920001914B1
公开(公告)日：1992-03-06
申请号：KR1019890012068
申请日：1989-08-24
Applicant: 한국전자통신연구원
Abstract: The metal wiring for a semiconductor element is formed by (A) forming a photosensitive film on the semiconductor substrate, (B) enhancing the stength of photosensitive film by low-temperature treating, (C) dipping the photosensitive film in monochlorobenzene, (D) recovering the strength of photosensitive film, (E) selectively exposing the photosensitive film, (F) high-temperature treating the film after developing, (G) depositing a metal layer on the upper side of the film, and (H) reproducing disired metal wiring by the lifting-off process.
Abstract translation: （A）在半导体基板上形成感光膜，（B）通过低温处理提高感光膜的长度，（C）将感光膜浸渍在一氯苯中，形成（D） 回收感光膜的强度，（E）选择性地曝光感光膜，（F）显影后对膜进行高温处理，（G）在膜的上侧沉积金属层，和（H）再现无色金属 通过起吊过程进行接线。
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