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公开(公告)号：KR100772538B1
公开(公告)日：2007-11-01
申请号：KR1020060122568
申请日：2006-12-05
Applicant: 한국전자통신연구원
IPC: H01L29/8605 , H01L31/09
CPC classification number: H01L31/12 , H01L27/144
Abstract: A photoelectric device using a PN diode and a silicon integrated circuit having the photoelectric device are provided to reduce a size and power consumption of the photoelectric device by decreasing a P type doping concentration to be lower than an N type doping concentration. A photoelectric device includes a substrate(110), an optical waveguide(130), and an electrode(140). The optical waveguide is formed of a PN diode on the substrate. A junction interface of the PN diode is formed in a propagation direction of light. The electrode is to apply a reverse bias voltage on the PN diode. An n-type semiconductor and a p-type semiconductor are doped to a high concentration. A doping concentration of the n-type semiconductor is higher than that of the p-type semiconductor.
Abstract translation: 提供了使用PN二极管的光电装置和具有该光电装置的硅集成电路，以通过将P型掺杂浓度降低至低于N型掺杂浓度来减小光电装置的尺寸和功耗。 光电器件包括衬底（110），光波导（130）和电极（140）。 光波导由衬底上的PN二极管形成。 PN二极管的结界面在光的传播方向上形成。 电极将在PN二极管上施加反向偏置电压。 以高浓度掺杂n型半导体和p型半导体。 n型半导体的掺杂浓度高于p型半导体的掺杂浓度。
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公开(公告)号：KR1020070058962A
公开(公告)日：2007-06-11
申请号：KR1020060087439
申请日：2006-09-11
Applicant: 한국전자통신연구원
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14601 , H01L27/14603
Abstract: A transfer transistor is provided to use the maximum characteristic of an image sensor by controlling generation of dark current in a photodiode and even the influence of dark electrons upon a transient interval of a transfer transistor in a CMOS image sensor. A p-type doping part is formed between a p-type region of the surface of a photodiode(PD) and a charge transfer channel from the photodiode to a diffusion node, having a different doping pattern from that of the p-type region of the surface of the photodiode. A gate oxide is positioned on the p-type doping part and the change transfer channel. A gate electrode is positioned on the gate oxide. The p-type doping part can be formed by diffusion in the boundary part of a p-type dopant material that is given to a substrate to form the p-type region of the surface of the photodiode.
Abstract translation: 提供传输晶体管以通过控制在CMOS图像传感器中的传输晶体管的瞬时间隔上的光电二极管中的暗电流的产生以及暗电子的影响来使用图像传感器的最大特性。 在光电二极管（PD）的表面的p型区域和从光电二极管到扩散节点的电荷转移通道之间形成p型掺杂部分，其具有与p型区域的p型区域不同的掺杂图案 光电二极管的表面。 栅极氧化物位于p型掺杂部分和变换传输沟道上。 栅电极位于栅极氧化物上。 p型掺杂部分可以通过在p型掺杂剂材料的边界部分中扩散形成，该p型掺杂剂材料被赋予衬底以形成光电二极管的表面的p型区域。
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公开(公告)号：KR101746499B1
公开(公告)日：2017-06-14
申请号：KR1020100133636
申请日：2010-12-23
Applicant: 한국전자통신연구원
IPC: H04N13/00
CPC classification number: G01S17/89 , G01S7/4813 , G01S7/4816 , G01S7/4863 , G01S7/4868 , G01S7/487 , G01S7/4912 , H04N13/106 , H04N13/211 , H04N13/254 , H04N13/296
Abstract: 본발명에의하면, 광증폭이득을제어할수 있는이득제어터미널을구비한광 검출기, 광검출기의출력을수신하여영상(image)을구성하기위한픽셀신호를검출하기위한픽셀검출모듈, 픽셀검출모듈에서검출한픽셀신호에기초하여픽셀신호의포화정도를나타내는신호를생성하고픽셀신호를결합하여다이내믹레인지영상을얻기위한 HDR(High Dynamic Range) 발생모듈, 및픽셀신호의포화정도를나타내는신호의크기에기초하여광 검출기의이득제어터미널에필요전압을공급하기위한출력신호를발생시키는이득제어신호발생모듈을포함하는다이내믹레인지삼차원영상시스템이제공된다.
Abstract translation: 根据本发明，提供了一种具有能够控制光放大增益的增益控制端子的光检测器，用于通过接收光检测器的输出来检测用于构建图像的像素信号的像素检测模块， HDR（高动态范围）生成模块，用于基于一个像素信号生成指示像素信号的饱和度的信号，并组合像素信号以获得动态范围图像; 以及增益控制信号生成模块，用于生成用于向光电探测器的增益控制端提供所需电压的输出信号。
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公开(公告)号：KR1020160000988A
公开(公告)日：2016-01-06
申请号：KR1020140078431
申请日：2014-06-25
Applicant: 한국전자통신연구원
CPC classification number: H04N1/02825
Abstract: 영상획득장치가개시된다. 영상획득장치는광원, 스캐너, 제 1 빔가르개및 수광부를포함한다. 상기광원은레이저펄스를발생한다. 상기스캐너는상기레이저펄스를제 1 방향으로조사한다. 상기제 1 빔가르개는상기제 1 방향으로조사된레이저펄스를상기제 1 방향및 제 2 방향으로분리하여조사하도록구성된다. 상기수광부는반사된빛을감지한다. 따라서, 상대적으로좁은발산각을갖는광원으로도넓은범위에빛을조사할수 있다.
Abstract translation: 公开了一种图像获取装置。 图像获取装置包括：光源，扫描仪，第一光束分离器和光接收单元。 光源产生激光脉冲。 扫描仪沿第一方向照射激光脉冲。 第一光束分离器被配置为照射沿第一方向照射的激光脉冲，以在第一方向和第二方向上被分割。 光接收单元检测反射光。 因此，通过仅具有相对窄的发散角的光源，可以将光照射到宽范围。
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Patent Agency Ranking
公开(公告)号：KR1020150145803A
公开(公告)日：2015-12-31
申请号：KR1020140074966
申请日：2014-06-19
Applicant: 한국전자통신연구원
IPC: H01S3/10
CPC classification number: H01S5/0057 , H01S3/0057 , H01S3/0085 , H01S3/06754 , H01S5/0265
Abstract: 본발명인펄스레이저생성기는연속발진레이저를수신하고, 상기연속발진레이저의휘도및 위상을조절하여제1 펄스레이저를생성하는조절부및 상기제1 펄스레이저를처핑하여제2 펄스레이저를생성하는처핑부를포함한다.
Abstract translation: 提供了一种脉冲激光发生器，其包括：调制器，被配置为接收连续振荡激光器，并且调制连续振荡激光器的亮度和相位以产生第一脉冲激光器; 以及啁啾单元，被配置为啁啾第一脉冲激光器以产生第二脉冲激光器。 因此，脉冲激光发生器长时间获得频率稳定和高输出特性。
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公开(公告)号：KR1020150004743A
公开(公告)日：2015-01-13
申请号：KR1020140080444
申请日：2014-06-30
Applicant: 한국전자통신연구원
IPC: G01S17/89
Abstract: 본 발명의 실시 예에 따른 레이저 레이더 시스템은, 제 1 시야 범위의 복수 위치에 제 1 레이저 빔을 순차적으로 조사하고 반사광을 수신하는 제 1 송수신 유닛, 그리고 제 2 시야 범위의 복수 위치에 제 2 레이저 빔을 순차적으로 조사하고 반사광을 수신하는 제 2 송수신 유닛을 포함하되, 상기 제 1 송수신 유닛과 상기 제 2 송수신 유닛 각각은 탑재체에 고정되어 상기 제 1 시야 범위 및 상기 제 2 시야 범위에 대한 탐색을 독립적으로 수행한다.
Abstract translation: 根据本发明的实施例，激光雷达系统包括：第一收发单元，其顺序地将第一激光束发射到第一视距范围内的多个位置并接收反射光;以及第二收发单元，其将第二激光束顺序地发射到多个位置 在第二视野范围内并接收反射光。 第一和第二收发单元中的每一个被固定在有效载荷中以独立地探索第一和第二视线范围。
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公开(公告)号：KR1020130069127A
公开(公告)日：2013-06-26
申请号：KR1020110136694
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/107
CPC classification number: H01L31/107
Abstract: PURPOSE: An avalanche photo diode and a manufacturing method thereof are provided to minimize dark current induced to the upper surface of a clad layer by forming an insulation area in the clad layer between an active area and a guard ring area. CONSTITUTION: An light absorption layer(12) is formed on a substrate(10). A clad layer(18) is formed on the light absorption layer. An active layer(30) is formed in the clad layer. A guard ring area(32) is formed at the circumference of the active area. An insulation area(36) is formed between the guard ring area and the active area.
Abstract translation: 目的：提供一种雪崩光电二极管及其制造方法，以通过在有源区域和保护环区域之间的包覆层中形成绝缘区域来最小化对包层的上表面产生的暗电流。 构成：在基板（10）上形成光吸收层（12）。 在光吸收层上形成包覆层（18）。 在包覆层中形成有源层（30）。 在活动区域的周围形成保护环区域（32）。 在保护环区域和有效区域之间形成绝缘区域（36）。
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公开(公告)号：KR1020100136163A
公开(公告)日：2010-12-28
申请号：KR1020090054382
申请日：2009-06-18
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A laser radar having a micro lens array integrated therein is provided to allow an optical signal to be projected on only a light receiving area of a optical detector through the front face of a micro lens array. CONSTITUTION: A light source unit(110) generates an optical signal. A light transmitting optical lens(120) transmits the optical signal from the light source unit to a target. A light receiving optical lens(140) receives the optical signal reflected from the target object. A converting lens(155) converts the received optical signal to a beam shape optical signal. A microlens array(160) condenses the beam shape optical signal.
Abstract translation: 目的：提供集成有微透镜阵列的激光雷达，以使光信号仅通过微透镜阵列的前表面投射到光学检测器的光接收区域上。 构成：光源单元（110）产生光信号。 透光光学透镜（120）将光信号从光源单元传送到目标。 光接收光学透镜（140）接收从目标物体反射的光信号。 转换透镜（155）将接收到的光信号转换成光束形状的光信号。 微透镜阵列（160）会聚束光束形状的光信号。
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公开(公告)号：KR1020100066280A
公开(公告)日：2010-06-17
申请号：KR1020090026352
申请日：2009-03-27
Applicant: 한국전자통신연구원
IPC: H01L31/09 , H01L29/737
CPC classification number: Y02E10/50 , H01L31/09 , H01L29/737
Abstract: PURPOSE: An optical receiver and a forming method thereof are provided to simplify a manufacturing process by forming a photodetector and a hetero junction bipolar transistor simultaneously. CONSTITUTION: A lens(50) is integrated with the rear side of a substrate(10). An optical detector(100) is formed on the front side of the substrate. A hetero junction bipolar transistor(200) is formed on the front side of the substrate. The lens concentrates an incident optical signal and transmits the concentrated optical signal to the optical detector. The optical detector comprises an amplification layer on the substrate and an absorption layer(130) on the amplification layer.
Abstract translation: 目的：提供光接收器及其形成方法，以通过同时形成光电检测器和异质结双极晶体管来简化制造过程。 构成：透镜（50）与衬底（10）的后侧一体化。 光学检测器（100）形成在基板的正面上。 在基板的正面上形成异质结双极晶体管（200）。 透镜集中入射光信号，并将浓缩的光信号传输到光检测器。 光学检测器包括衬底上的放大层和放大层上的吸收层（130）。
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