公开(公告)号：DE69607965T2

公开(公告)日：2000-08-17

申请号：DE69607965

申请日：1996-06-10

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725 ,  H02M1/00 ,  H02H7/12

公开(公告)号：SE9500761D0

公开(公告)日：1995-03-02

申请号：SE9500761

申请日：1995-03-02

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO

IPC: H01L27/04 ,  H01L21/822 ,  H02H7/20 ,  H02H9/04 ,  H02M1/08 ,  H02M7/538 ,  H03K17/0814 ,  H03K17/082

公开(公告)号：SE9704149D0

公开(公告)日：1997-11-13

申请号：SE9704149

申请日：1997-11-13

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L

公开(公告)号：SE9602407D0

公开(公告)日：1996-06-19

申请号：SE9602407

申请日：1996-06-19

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  ZDANSKY LENNART ,  BIJLENGA BO

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L

Abstract: In a method for producing a channel region layer in a SiC-layer for providing a voltage-controlled semiconductor device a layer of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture is etched in the silicon layer extending to the SiC-layer, a surface layer of a certain thickness of the silicon layer is oxidized, and the lateral extension of the channel region layer is determined by removing the oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture.