公开(公告)号：WO9926296A2

公开(公告)日：1999-05-27

申请号：PCT/SE9802048

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract translation: SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部件（1,2），每个部件包括一个或多个SiC半导体层并且串联连接在器件的两个相对端子之间，即子半导体器件（1）能够仅承受阻断状态下的低电压 以及能够承受器件阻断状态下的高电压的电压限制部分（2），并且适于通过在器件处于其阻断状态下取得大部分电压来保护所述子半导体器件。

公开(公告)号：SE9704149D0

公开(公告)日：1997-11-13

申请号：SE9704149

申请日：1997-11-13

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L

公开(公告)号：SE9702220D0

公开(公告)日：1997-06-11

申请号：SE9702220

申请日：1997-06-11

Applicant: ABB RESEARCH LTD

Inventor： KONSTANTINOV ANDREY

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/861 ,  H01L

Abstract: A semiconductor device has a first low-doped semiconductor layer of SiC, a second layer placed next thereto and a junction between these layers being adapted to hold a voltage in a blocking state of the device with a substantially thicker depletion layer in the first layer than in the second one. A junction edge termination is obtained by a position beveling of the junction, so that the area of the device decreases away from the second layer at least in the first layer close to the junction within at least a part of the depletion layer in the first layer and away therefrom by a peripheral bevel surface. The first and second layers are formed by a hexagonal SiC crystal having the c-axis oriented substantially perpendicular to the junction.

公开(公告)号：SE9503630D0

公开(公告)日：1995-10-18

申请号：SE9503630

申请日：1995-10-18

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER ,  KONSTANTINOV ANDREY ,  JANZEN ERIK

IPC: H01L29/20 ,  H01L29/201 ,  H01L29/24 ,  H01L29/267 ,  H01L29/778 ,  H01L