公开(公告)号：JPH11234103A

公开(公告)日：1999-08-27

申请号：JP1074698

申请日：1998-01-22

Applicant: ABB RESEARCH LTD

Inventor： BO BIJURENGA ,  PETER LUNDBERG ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H01L27/04 ,  H01L29/78 ,  H02M1/08 ,  H03K17/16 ,  H03K17/56

Abstract: PROBLEM TO BE SOLVED: To provide an improved control method and device of a switching operation composed of a turn-on operation or a turn-off operation in a voltage controlled power transistor. SOLUTION: These method and device control the switching operation composed of the turn-on operation or the turn-off operation in the voltage controlled power transistor. In this case, at least one current source (S1 and S2) is connected to the control electrode (G) of the power transistor, the recharging of at least one capacitance performed between the control electrode (G) of the power transistor and the main electrodes (C and E) of the power transistor is controlled and thus, the time-depending change rate of at least one of a voltage amount and a current amount is decided.

公开(公告)号：WO9926296A2

公开(公告)日：1999-05-27

申请号：PCT/SE9802048

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract translation: SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部件（1,2），每个部件包括一个或多个SiC半导体层并且串联连接在器件的两个相对端子之间，即子半导体器件（1）能够仅承受阻断状态下的低电压 以及能够承受器件阻断状态下的高电压的电压限制部分（2），并且适于通过在器件处于其阻断状态下取得大部分电压来保护所述子半导体器件。

公开(公告)号：SE9700141D0

公开(公告)日：1997-01-20

申请号：SE9700141

申请日：1997-01-20

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  BIJLENGA BO ,  RAMBERG LENNART ,  ROTTNER KURT ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  SCHOENER ADOLF ,  LUNDBERG NILS ,  OESTLING MIKAEL ,  DAHLQUIST FANNY

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/872 ,  H01L

公开(公告)号：SE9502249D0

公开(公告)日：1995-06-21

申请号：SE9502249

申请日：1995-06-21

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725

公开(公告)号：SE9603432L

公开(公告)日：1998-03-21

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K17/08

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

公开(公告)号：DE69607965D1

公开(公告)日：2000-05-31

申请号：DE69607965

申请日：1996-06-10

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725 ,  H02M1/00 ,  H02H7/12

公开(公告)号：SE9603432D0

公开(公告)日：1996-09-20

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

公开(公告)号：SE515457C2

公开(公告)日：2001-08-06

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K17/08

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

公开(公告)号：DE69607965T2

公开(公告)日：2000-08-17

申请号：DE69607965

申请日：1996-06-10

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725 ,  H02M1/00 ,  H02H7/12

公开(公告)号：SE9901410D0

公开(公告)日：1999-04-21

申请号：SE9901410

申请日：1999-04-21

Applicant: ABB RESEARCH LTD

Inventor： BAKOWSKI MIETEK ,  GUSAFSSON ULF ,  ZDANSKY LENNART ,  BREITHOLTZ BO

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/732 ,  H01L29/737 ,  H01L29/739 ,  H01L

Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.