-
11.发明申请PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 审中-公开用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物
公开(公告)号：WO2007106788A3
公开(公告)日：2007-12-13
申请号：PCT/US2007063825
申请日：2007-03-12
Applicant: ADVANCED TECH MATERIALS , XU CHONGYING , CHEN TIANNIU , CAMERON THOMAS M , ROEDER JEFFREY F , BAUM THOMAS H
Inventor： XU CHONGYING , CHEN TIANNIU , CAMERON THOMAS M , ROEDER JEFFREY F , BAUM THOMAS H
IPC: H01L21/31 , H01L21/469
CPC classification number: C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) 2 , wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
Abstract translation: 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2 N，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1， 其中各自独立地选自氢，C 1 -C 12 - / - C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 C 12 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2-C≡S > 12个烯基，R 1，R 2，R 3，R 3，R 3，R 3，R 3， R 1，R 2和R 3可以彼此相同或不同，并且各自独立地选自氢和C 1〜 并且包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数材料的均匀涂覆 男人 制造闪存等微电子器件。
-
公开(公告)号：WO2010120954A3
公开(公告)日：2011-03-24
申请号：PCT/US2010031125
申请日：2010-04-14
Applicant: ADVANCED TECH MATERIALS , ROEDER JEFFREY F , HENDRIX BRYAN C , BILODEAU STEVEN M , STAUF GREGORY T , CHEN TIANNIU , CAMERON THOMAS M , XU CHONGYING
Inventor： ROEDER JEFFREY F , HENDRIX BRYAN C , BILODEAU STEVEN M , STAUF GREGORY T , CHEN TIANNIU , CAMERON THOMAS M , XU CHONGYING
IPC: H01G4/018
CPC classification number: H01G4/1209 , C04B35/49 , C04B35/491 , C04B35/6325 , C04B2235/3206 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/441 , C04B2235/449 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/20 , H01L21/02194 , H01L21/02271 , H01L21/3142 , H01L28/40 , Y10T428/12493 , Y10T428/12674 , Y10T428/12806 , Y10T428/12819 , Y10T428/1284
Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.
Abstract translation: 包括早期过渡金属或金属氧化物基材以及选自Nb，Ge，Ta，La，Y，Ce，Pr，Nd，Gd，Dy中的掺杂剂，共沉积，合金化或分层次级材料的复合电介质材料 ，Sr，Ba，Ca和Mg，以及这些金属的氧化物，以及作为掺杂剂或合金化二次材料的氧化铝。 这种复合电介质材料可以通过使用合适的前体的气相沉积工艺（例如ALD）形成微电子器件，例如铁电高k电容器，栅极结构，DRAM等。
-
公开(公告)号：WO2010088194A3
公开(公告)日：2010-11-25
申请号：PCT/US2010022050
申请日：2010-01-26
Applicant: ADVANCED TECH MATERIALS , CHEN TIANNIU , BILODEAU STEVEN , BOGGS KARL E , JIANG PING , KORZENSKI MICHAEL B , MIRTH GEORGE , VAN BERKEL KIM
Inventor： CHEN TIANNIU , BILODEAU STEVEN , BOGGS KARL E , JIANG PING , KORZENSKI MICHAEL B , MIRTH GEORGE , VAN BERKEL KIM
CPC classification number: C11D11/0041 , C11D1/66 , C11D1/667 , C11D1/825 , C11D3/2072 , C11D3/2093 , C11D3/43 , C11D11/0047 , G03F7/70341 , G03F7/70925
Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.
Abstract translation: 使用所述组合物从表面除去聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。 所述组合物包含至少一种有机溶剂和一种非离子表面活性剂。 此外，所述组合物的pH为约5至9。
-
公开(公告)号：WO2009059237A3
公开(公告)日：2009-09-24
申请号：PCT/US2008082134
申请日：2008-10-31
Applicant: ADVANCED TECH MATERIALS , CHEN TIANNIU , XU CHONGYING , HENDRIX BRYAN C , HUNKS WILLIAM , CAMERON THOMAS M , STENDER MATTHIAS , STAUF GREGORY T , ROEDER JEFFREY F
Inventor： CHEN TIANNIU , XU CHONGYING , HENDRIX BRYAN C , HUNKS WILLIAM , CAMERON THOMAS M , STENDER MATTHIAS , STAUF GREGORY T , ROEDER JEFFREY F
IPC: C07F9/94
CPC classification number: C07F9/94
Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (
Abstract translation: 具有用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋膜的铋前体，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，β-二酮铋酸铋 铋铋，二酮铋，铋铋，铋基铋，烷氧基铋，铋配合物，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚胺二磷酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含热电铋膜的膜。
-
15.发明申请ZIRCONIUM, HAFNUIM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD 审中-公开ZIRCONIUM，HAFNUIM，钛和钛前驱体用于ALD / CVD
公开(公告)号：WO2008128141A3
公开(公告)日：2009-01-08
申请号：PCT/US2008060162
申请日：2008-04-13
Applicant: ADVANCED TECH MATERIALS , XU CHONGYING , ROEDER JEFFREY F , CHEN TIANNIU , HENDRIX BRYAN C , BENAC BRIAN , CAMERON THOMAS M , PETERS DAVID W , STAUF GREGORY T , MAYLOTT LEAH
Inventor： XU CHONGYING , ROEDER JEFFREY F , CHEN TIANNIU , HENDRIX BRYAN C , BENAC BRIAN , CAMERON THOMAS M , PETERS DAVID W , STAUF GREGORY T , MAYLOTT LEAH
CPC classification number: C07F7/006 , C07C211/65 , C07F17/00 , C23C16/18 , C23C16/405
Abstract: Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.
Abstract translation: 分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。 所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。
-
Patent Agency Ranking16.发明申请
公开(公告)号：WO2007147020A3
公开(公告)日：2008-05-02
申请号：PCT/US2007071153
申请日：2007-06-13
Applicant: ADVANCED TECH MATERIALS , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C
Inventor： CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C
CPC classification number: C07F17/02 , C07F15/06 , C07F15/065 , C23C16/18
Abstract: Cobalt precursors for forming metallic cobalt thin films in the manufacture of semiconductor devices, and methods of depositing the cobalt precursors on substrates, e.g., using chemical vapor deposition or atomic layer deposition processes. Packaged cobalt precursor compositions, and microelectronic device manufacturing systems are also described.
Abstract translation: 用于在制造半导体器件中形成金属钴薄膜的钴前体，以及在基底上沉积钴前体的方法，例如使用化学气相沉积或原子层沉积工艺。 还描述了包装的钴前体组合物和微电子器件制造系统。
-
17.发明申请
公开(公告)号：WO2006007077A3
公开(公告)日：2006-10-26
申请号：PCT/US2005016460
申请日：2005-05-11
Applicant: ADVANCED TECH MATERIALS , WANG ZIYUN , XU CHONGYING , HENDRIX BRYAN C , ROEDER JEFFERY F , CHEN TIANNIU , BAUM THOMAS H
Inventor： WANG ZIYUN , XU CHONGYING , HENDRIX BRYAN C , ROEDER JEFFERY F , CHEN TIANNIU , BAUM THOMAS H
CPC classification number: C07F7/10 , H01L21/02271
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
Abstract translation: 在制造半导体器件（例如包括碳氮化硅，硅碳氮氧化物和氮化硅（Si 3 N 4 N 4）的膜的半导体器件的制造中用于形成含硅膜的硅前驱体，以及 使用低温（例如，<550℃）化学气相沉积工艺在衬底上沉积硅前体的方法，用于制造ULSI器件和器件结构。
-
公开(公告)号：SG11201403228RA
公开(公告)日：2014-07-30
申请号：SG11201403228R
申请日：2012-12-13
Applicant: ADVANCED TECH MATERIALS
Inventor： CHEN TIANNIU , KORZENSKI MICHAEL B , JIANG PING
-
公开(公告)号：SG187959A1
公开(公告)日：2013-03-28
申请号：SG2013014071
申请日：2011-08-26
Applicant: ADVANCED TECH MATERIALS
Inventor： CHEN TIANNIU , BILODEAU STEVEN , SHEU CHIMIN , NAKANISHI MUTSUMI , MATSUOKA MASAHIRO , NAKAYAMA FUMIO , ZHANG PENG , KORZENSKI MICHAEL B , COOPER EMANUEL I , VECCHARELLI KATE , PAYNE MAKONNEN
Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.
-
公开(公告)号：IN1462KON2014A
公开(公告)日：2015-10-23
申请号：IN1462KON2014
申请日：2014-07-11
Applicant: ADVANCED TECH MATERIALS
Inventor： CHEN TIANNIU , KORZENSKI MICHAEL B , JIANG PING
Abstract: Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.
-
-
-
-
-
-
-
-
-
Search Results
34
records
(took 0.027 seconds)
