中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

16 records (took 0.034 seconds)

    THIN FILM ENCAPSULATION OF ELECTRODES
    11.
    发明申请
    THIN FILM ENCAPSULATION OF ELECTRODES 审中-公开
    电极薄膜封装

    公开(公告)号：WO2015094116A1

    公开(公告)日：2015-06-25

    申请号：PCT/SG2014/000599

    申请日：2014-12-16

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

    Inventor： LEE, Jae-Wung ,  SHARMA, Jaibir ,  SINGH, Navab

    IPC: H01L21/56 ,  H01L23/28

    CPC classification number: B81B7/0058 ,  B81C1/00293 ,  B81C1/00825 ,  B81C2203/0145 ,  B81C2203/0154 ,  B81C2203/0172 ,  H01L21/56 ,  H01L23/28 ,  H01L23/3135 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of fabricating encapsulated microelectromechanical system (MEMS) devices, comprising: providing a substrate having one or more MEMS devices formed thereon; depositing a sacrificial layer over the substrate and the one or more MEMS devices; patterning the sacrificial layer to define one or more cavities in the sacrificial layer and around the one or more MEMS devices; forming a cap layer over the sacrificial layer and the one or more cavities, the cap layer having one or more etch holes defined therein; removing the sacrificial layer by etching the sacrificial layer at least through the one or more etch holes; and depositing a sealing layer over the cap layer and the one or more etch holes to encapsulate the one or more MEMS devices, the substrate, and the cap layer.

    Abstract translation: 一种制造封装的微机电系统（MEMS）器件的方法，包括：提供其上形成有一个或多个MEMS器件的衬底; 在所述衬底和所述一个或多个MEMS器件上沉积牺牲层; 图案化所述牺牲层以在所述牺牲层中并围绕所述一个或多个MEMS器件限定一个或多个空腔; 在所述牺牲层和所述一个或多个空腔上形成覆盖层，所述盖层具有限定在其中的一个或多个蚀刻孔; 通过至少通过所述一个或多个蚀刻孔蚀刻所述牺牲层来去除所述牺牲层; 以及在所述盖层和所述一个或多个蚀刻孔上沉积密封层以封装所述一个或多个MEMS器件，所述衬底和所述覆盖层。

    ELECTROMECHANICAL DEVICE AND METHOD OF FABRICATING THE SAME
    12.
    发明申请
    ELECTROMECHANICAL DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    电动装置及其制造方法

    公开(公告)号：WO2014171896A1

    公开(公告)日：2014-10-23

    申请号：PCT/SG2014/000170

    申请日：2014-04-17

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

    Inventor： OCAK, Ilker, E. ,  TSAI, Julius, Ming Lin ,  SINGH, Navab

    IPC: B81B5/00 ,  B81B3/00 ,  B81C3/00 ,  H01L23/52 ,  H01L25/00

    CPC classification number: B81B7/0048 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00285 ,  B81C2203/0118 ,  B81C2203/0172 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  G01R33/00 ,  G01R33/0052 ,  G01R33/0286 ,  H01L25/00 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An electromechanical device and method of fabrication thereof comprising: providing a first wafer with a circuit arrangement on a first surface thereof and a first electrode on a second surface thereof; forming first and second via structures from the first surface to the second surface of the first wafer, said first via electrically connecting the first electrode with the circuit arrangement; providing a second wafer with a suspended structure on a first surface thereof; forming a second electrode on the suspended structure; forming an interconnect structure on the first surface of the second wafer that electrically connects with the second electrode; bonding the first wafer to the second wafer with the second surface of the first wafer facing the first surface of the second wafer, with the second via structure electrically connecting the circuit arrangement to the interconnect structure, and the first and second electrodes forming a capacitive structure.

    Abstract translation: 一种机电装置及其制造方法，包括：在其第一表面上提供具有电路装置的第一晶片和在其第二表面上的第一电极; 从所述第一晶片的第一表面到所述第二表面形成第一和第二通孔结构，所述第一通孔将所述第一电极与所述电路装置电连接; 在其第一表面上提供具有悬挂结构的第二晶片; 在所述悬挂结构上形成第二电极; 在与第二电极电连接的第二晶片的第一表面上形成互连结构; 将第一晶片接合到第二晶片，其中第一晶片的第二表面面向第二晶片的第一表面，其中第二通孔结构将电路装置电连接到互连结构，并且第一和第二电极形成电容结构 。

    A SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME
    13.
    发明申请
    A SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME 审中-公开
    一种硅 - 锗纳米结构及其形成方法

    公开(公告)号：WO2009072984A1

    公开(公告)日：2009-06-11

    申请号：PCT/SG2007/000422

    申请日：2007-12-07

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  SINGH, Navab ,  JIANG, Yu ,  LO, Guo Qiang, Patrick

    Inventor： SINGH, Navab ,  JIANG, Yu ,  LO, Guo Qiang, Patrick

    IPC: H01L29/737 ,  H01L21/20 ,  H01L27/095 ,  B82B3/00 ,  H01L21/223

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/28282 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/4234 ,  H01L29/7831 ,  H01L29/792

    Abstract: A silicon-germanium nanowire structure arranged on a support substrate is disclosed, The silicon-germanium nanowire structure includes at least one germanium-containing supporting portion arranged on the support substrate, at least one germanium-containing nanowire disposed above the support substrate and arranged adjacent the at least one germanium-containing supporting portion, wherein germanium concentration of the at least one germanium-containing nanowire is higher than the at least one germanium-containing supporting portion. A transistor comprising the silicon-germanium nanowire structure arranged on a support substrate is also provided. A method of forming a silicon-germanium nanowire structure arranged on a support substrate and a method of forming a transistor comprising forming the silicon-germanium nanowire structure arranged on a support substrate are also disclosed.

    Abstract translation: 公开了布置在支撑衬底上的硅 - 锗纳米线结构。硅 - 锗纳米线结构包括至少一个配置在支撑衬底上的含锗支撑部分，至少一个含锗纳米线设置在支撑衬底上方并且邻近 所述至少一个含锗支持部分，其中所述至少一种含锗纳米线的锗浓度高于所述至少一种含锗支撑部分。 还提供了包括布置在支撑衬底上的硅 - 锗纳米线结构的晶体管。 还公开了一种形成布置在支撑衬底上的硅 - 锗纳米线结构的方法以及形成包括形成布置在支撑衬底上的硅 - 锗纳米线结构的晶体管的方法。

Patent Agency Ranking