公开(公告)号：WO2014187656A1

公开(公告)日：2014-11-27

申请号：PCT/EP2014/058996

申请日：2014-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： BOGAART, Erik ,  BIJNEN, Franciscus ,  DEN BOEF, Arie ,  MATHIJSSEN, Simon, Gijsbert, Josephus

IPC: G03F7/20 ,  G01N21/65

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.

Abstract translation: 衬底具有器件结构和计量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受到量子限制的显着影响。 测量结构（800）包括与装置特征相似的组成和尺寸的装置状结构（800b）和校准结构（800a）。 校准结构类似于组合中的器件特征，但至少在一个维度上不同。 通过使用实施拉曼光谱的检查装置和方法，可以通过比较从器件状结构和校准结构中弹性散射的辐射的光谱特征来测量器件状结构的尺寸。

公开(公告)号：WO2013124131A2

公开(公告)日：2013-08-29

申请号：PCT/EP2013/051878

申请日：2013-01-31

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie

CPC classification number: G01J3/4412 ,  G01J3/44 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G02B5/205 ,  G03F7/70591 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7026

Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

Abstract translation: 光谱散射仪检测从目标光栅上的照明光点衍射的零级和高阶辐射。 该装置形成和检测零级（反射）辐射的光谱，并分别形成和检测高阶衍射辐射的光谱。 每个光谱使用对称相位光栅形成，以便形成和检测对称的光谱对。 这对光谱可以被平均以获得具有降低的聚焦灵敏度的单个光谱。 比较两个光谱可以产生用于在随后的光刻步骤中改善高度测量的信息。 目标光栅倾斜定向，使得零级和高阶辐射从不同平面中的光点发出。 两个散射仪可以同时操作，从不同的倾斜方向照射目标。 径向传输过滤器可减少现场的旁瓣并减少产品串扰。

公开(公告)号：WO2013029893A3

公开(公告)日：2013-03-07

申请号：PCT/EP2012/064755

申请日：2012-07-27

Applicant: ASML NETHERLANDS B.V. ,  DE JAGER, Pieter ,  BLEEKER, Arno ,  DEN BOEF, Arie ,  LOOPSTRA, Erik ,  PANDEY, Nitesh

Inventor： DE JAGER, Pieter ,  BLEEKER, Arno ,  DEN BOEF, Arie ,  LOOPSTRA, Erik ,  PANDEY, Nitesh

IPC: G03F7/20

Abstract: A lithographic system has a lithographic apparatus, an inspection system and a controller. The lithographic apparatus includes a projection system configured to project a radiation beam onto a layer of material on or above a substrate. The inspection system is configured to inspect a pattern formed on the substrate. The pattern is formed on the substrate by application of the radiation beam. The controller is configured to control the lithographic apparatus to form a pattern based on data from an inspection by the inspection system of a previously exposed pattern.

公开(公告)号：WO2012076216A1

公开(公告)日：2012-06-14

申请号：PCT/EP2011/067491

申请日：2011-10-06

Applicant: ASML NETHERLANDS B.V. ,  VAINER, Yuri ,  BANINE, Vadim ,  DEN BOEF, Arie ,  SCACCABAROZZI, Luigi

Inventor： VAINER, Yuri ,  BANINE, Vadim ,  DEN BOEF, Arie ,  SCACCABAROZZI, Luigi

IPC: G01N21/94 ,  G01N21/956 ,  G03F7/20 ,  H01L21/66

CPC classification number: G03F7/7085 ,  G01N21/94 ,  G01N21/956 ,  G01N21/95623 ,  G01N2021/95676 ,  G03F1/24 ,  G03F1/84 ,  G03F7/70916

Abstract: An article such as an EUV (extreme ultraviolet) lithography reticle is inspected to detect contaminant particles. The inspection apparatus (900) comprises illumination optics (602) with primary radiation (λρ). An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor (610,910) and forming its image with a different portion of radiation received from the illuminated article. A processor (PU) combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out(612), so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter (918) blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.

Abstract translation: 检查诸如EUV（极紫外）光刻掩模版的物品以检测污染物颗粒。 检查装置（900）包括具有初级辐射（θ）的照明光学器件（602）。 布置具有多个分支的成像光学系统以形成和检测多个图像，每个分支具有图像传感器（610,910），并且用从照明物品接收到的辐射的不同部分形成其图像。 处理器（PU）组合来自检测到的图像的信息以报告污染物颗粒的存在和位置。 在一个或多个分支中，主辐射被滤出（612），使得仅使用由主要辐射响应的污染物质发射的二次辐射形成检测到的图像。 在使用散射的初级辐射的暗场成像分支中，空间滤波器（918）阻挡与被检查物品的周期特征相关联的空间频率分量，以允许检测不能被二次辐射检测的粒子。

公开(公告)号：WO2011072897A1

公开(公告)日：2011-06-23

申请号：PCT/EP2010/064663

申请日：2010-10-01

Applicant: ASML NETHERLANDS B.V. ,  WUISTER, Sander ,  DEN BOEF, Arie ,  KRUIJT-STEGEMAN, Yvonne

Inventor： WUISTER, Sander ,  DEN BOEF, Arie ,  KRUIJT-STEGEMAN, Yvonne

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00 ,  Y10T428/24479

Abstract: An object provided with a particular alignment arrangement for use in aligning the object and a further object with respect to each other is disclosed. The alignment arrangement includes a first fine alignment mark in the form of a substantially regular grating, and a second coarse alignment mark located in the same area as the first alignment mark.

Abstract translation: 公开了一种具有特定对准装置的物体，用于将物体和另一物体相对于彼此对准。 对准布置包括基本上规则的格栅形式的第一精细对准标记和位于与第一对准标记相同的区域中的第二粗略对准标记。

公开(公告)号：WO2011045125A1

公开(公告)日：2011-04-21

申请号：PCT/EP2010/063184

申请日：2010-09-08

Applicant: ASML NETHERLANDS B.V. ,  VERSTAPPEN, Leonardus ,  DEN BOEF, Arie

Inventor： VERSTAPPEN, Leonardus ,  DEN BOEF, Arie

IPC: G03F1/00 ,  G01N21/956 ,  G01N21/47

CPC classification number: G03F1/84 ,  G01N21/47 ,  G01N21/95607

Abstract: Methods of inspection and apparatus usable, for example, in the manufacture of devices by lithographic techniques to detect processing faults on semiconductor wafers. Illuminating a strip of a die along a scan path with a moving measurement spot. Detecting scattered radiation to obtain an angle-resolved spectrum that is spatially integrated over the strip. Comparing the scattering data with a library of reference spectra, obtained by measurement or calculation. Based on the comparison, determining the presence of a fault of the die at the strip. The measurement spot is scanned across the wafer in a scan path trajectory comprising large (constant) velocity portions and the acquisition of the angle-resolved spectrum is taken, and comparisons are done, at full scan speed. If a long acquisition is performed along a strip across the die in the Y direction, then variation in the acquired spectrum resulting from position variation will primarily depend on the X position of the spot. Spot position variation will occur because no alignment of the spot to the wafer is performed along the high-speed scan path trajectory. A library of reference spectra are obtained for a range of scan paths at respective X- positions on the die to allow for variation in the X position of the high-speed measurement spot.

Abstract translation: 检查方法和可用的装置，例如通过光刻技术制造器件以检测半导体晶片上的处理故障。 用移动的测量点沿扫描路径照射模具条。 检测散射辐射，以获得在条带上空间集成的角度分辨光谱。 将散射数据与通过测量或计算获得的参考光谱库进行比较。 基于该比较，确定在条带处存在模具的故障。 在包括大（恒定）速度部分的扫描路径轨迹中扫描测量点，并采集角度分辨谱的采集，并以全扫描速度进行比较。 如果在Y方向上跨越模具沿条带执行长采集，则由位置变化产生的所获得的光谱的变化将主要取决于点的X位置。 将发生点位置变化，因为沿着高速扫描路径轨迹不执行光点到晶片的对准。 对于模具上的各个X位置处的扫描路径的范围获得参考光谱库，以允许高速测量点的X位置的变化。

公开(公告)号：WO2010020506A1

公开(公告)日：2010-02-25

申请号：PCT/EP2009/059362

申请日：2009-07-21

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie ,  KUIPER, Johannes

Inventor： DEN BOEF, Arie ,  KUIPER, Johannes

IPC: G03F7/20 ,  G02B6/42

CPC classification number: G03F7/7085 ,  G03F7/70266 ,  G03F7/70625 ,  G03F7/70633

Abstract: A metrology device for inspecting a substrate is provided. In an embodiment, the metrology device includes a remote radiation source device, an optical system for creating a radiation beam, and an optical fibre for transferring radiation from the optical system to the location where the metrology operations are performed. The optical system includes a control system that includes a deformable mirror, a detector that detects the position of a radiation beam, and a controller that produces a control signal for input into the deformable mirror, the control signal being based on the detected position of the radiation. In this way, the shape of the deformable mirror can be used to control the position of the radiation beam output by the optical system into the optical fibre.

Abstract translation: 提供了一种用于检查基板的计量装置。 在一个实施例中，测量装置包括远程辐射源装置，用于产生辐射束的光学系统和用于将辐射从光学系统传送到执行测量操作的位置的光纤。 光学系统包括控制系统，其包括可变形反射镜，检测辐射束位置的检测器和产生用于输入到可变形反射镜中的控制信号的控制器，控制信号基于检测到的位置 辐射。 以这种方式，可变形反射镜的形状可用于控制由光学系统输出到光纤中的辐射束的位置。

公开(公告)号：WO2019158328A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/051618

申请日：2019-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：WO2013152878A2

公开(公告)日：2013-10-17

申请号：PCT/EP2013/052384

申请日：2013-02-07

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： KREUZER, Justin ,  DEN BOEF, Arie ,  MATHIJSSEN, Simon

CPC classification number: G01B11/14 ,  F25D3/06 ,  F25D11/003 ,  F25D23/006 ,  G01B9/0207 ,  G03F7/70108 ,  G03F9/7069 ,  G03F9/7084 ,  G03F9/7088

Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

Abstract translation: 设备（AS）测量光刻基板（W）上的标记（202）的位置。 照明装置（940，962,964）提供至少第一和第二区域的离轴辐射。 第一和第二源极区域相对于光轴线（O）彼此径向相对并且在角度范围内受到限制。 这些区域可以是根据正被测量的标记的周期方向或较大的段选择的小点。 可以通过将单个源馈送位置处的辐射提供给自参考干涉仪来产生所选择的一对源区域处的辐射。 修改后的半波片位于干涉仪的下游，可用于位置测量装置。 修改后的半波片的一个部分的快轴与另一部分直径相对的快轴成45度。

公开(公告)号：WO2011023517A1

公开(公告)日：2011-03-03

申请号：PCT/EP2010/061379

申请日：2010-08-05

Applicant: ASML Netherlands B.V. ,  SMILDE, Hendrik ,  DEN BOEF, Arie ,  COENE, Willem ,  BLEEKER, Arno ,  KOOLEN, Armand ,  PELLEMANS, Henricus ,  PLUG, Reinder

Inventor： SMILDE, Hendrik ,  DEN BOEF, Arie ,  COENE, Willem ,  BLEEKER, Arno ,  KOOLEN, Armand ,  PELLEMANS, Henricus ,  PLUG, Reinder

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70616

Abstract: A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.

Abstract translation: 计量装置被布置成以离轴照明模式照射多个目标。 仅使用一个一阶衍射光束获得目标图像。 在目标是复合光栅的地方，可以从不同光栅的图像的强度获得覆盖测量。 可以对由图像场中的光栅位置的变化引起的误差来校正叠加测量。