Abstract:
Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.
Abstract:
A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
Abstract:
The disclosure relates to measuring a target. In one arrangement, a measurement apparatus is provided that has an optical system configured to illuminate a target with radiation and direct reflected radiation from the target to a sensor. A programmable spatial light modulator in a pupil plane of the optical system is programmed to redirect light in each of a plurality of pupil plane zones in such a way as to form a corresponding plurality of images at different locations on the sensor. Each image is formed by radiation passing through a different respective one of the pupil plane zones.
Abstract:
Disclosed is a method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method comprises configuring measurement radiation to obtain a configured measurement spectrum of said measurement radiation by: imposing an intensity weighting on individual wavelength bands of said measurement radiation such that said individual wavelength bands have an intensity according to said intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of said measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.
Abstract:
Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
Abstract:
The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
Abstract:
Methods of measuring a target formed by a lithographic process, a metrology apparatus and a polarizer assembly are disclosed. The target comprises a layered structure having a first periodic structure in a first layer and a second periodic structure in a second layer. The target is illuminated with polarized measurement radiation. Zeroth order scattered radiation from the target is detected. An asymmetry in the first periodic structure is derived using the detected zeroth order scattered radiation from the target. A separation between the first layer and the second layer is such that the detected zeroth order scattered radiation is independent of overlay error between the first periodic structure and the second periodic structure. The derived asymmetry in the first periodic structure is used to derive the correct overlay value between the first periodic structure and the second periodic structure.
Abstract:
Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
Abstract:
A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.
Abstract:
The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.