公开(公告)号：WO2021130315A1

公开(公告)日：2021-07-01

申请号：PCT/EP2020/087770

申请日：2020-12-23

Applicant: ASML NETHERLANDS B.V.

Inventor： KHEDEKAR, Satej, Subhash ,  VERMA, Alok ,  JONGEN, Martijn ,  BADR, Elie ,  VENSELAAR, Joannes, Jitse ,  ROELOFS, Willem, Seine, Christian ,  KARSSENBERG, Jaap, Goossen ,  SANGUINETTI, Gonzalo, Roberto ,  MICELI, Giacomo ,  CHEN, Kuan-Ming ,  RUTIGLIANI, Vito, Daniele ,  WANG, Shu-jin

IPC: G03F7/20 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: A target comprising an overlapping grating, wherein the top gratings are positioned in close proximity to an ending of the bottom lying grating.

公开(公告)号：WO2019101447A1

公开(公告)日：2019-05-31

申请号：PCT/EP2018/078591

申请日：2018-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  THEEUWES, Thomas ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  SHAHRJERDY, Mir, Homayoun ,  DEN BOEF, Arie, Jeffrey ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：WO2017149009A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054761

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  VAN WITTEVEEN, Koen ,  ZAAL, Martijn, Maria ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

Abstract translation: 度量目标包括：布置成通过第一图案化工艺形成的第一结构; 以及布置成通过第二图案化工艺形成的第二结构，其中第一结构和/或第二结构不用于创建器件图案的功能方面，并且其中第一和第二结构一起形成一个或多个 单位单元，所述单位单元在标称物理配置处具有几何对称性，并且其中所述单位单元具有如下特征：由于所述第一图案化工艺中的图案布置的相对偏移，在与所述标称物理配置不同的物理配置下， 第二次构图工艺和/或其他图案化工艺，单元格中的不对称性。

公开(公告)号：WO2019158328A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/051618

申请日：2019-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：WO2013189724A2

公开(公告)日：2013-12-27

申请号：PCT/EP2013/061370

申请日：2013-06-03

Applicant: ASML NETHERLANDS B.V.

Inventor： HINNEN, Paul ,  WANG, Shu-jin ,  LEEWIS, Christian ,  PAO, Kuo-Feng

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以选择用于使用第一散射仪信号确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

公开(公告)号：EP3489756A1

公开(公告)日：2019-05-29

申请号：EP17203287.2

申请日：2017-11-23

Applicant: ASML Netherlands B.V.

Inventor： TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  THEEUWES, Thomas ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  SHAHRJERDY, Mir, Homayoun ,  DEN BOEF, Arie, Jeffrey ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：EP3528047A1

公开(公告)日：2019-08-21

申请号：EP18156625.8

申请日：2018-02-14

Applicant: ASML Netherlands B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie, Jeffrey ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.