公开(公告)号：US11782349B2

公开(公告)日：2023-10-10

申请号：US18100662

申请日：2023-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11480884B2

公开(公告)日：2022-10-25

申请号：US16936867

申请日：2020-07-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US11378891B2

公开(公告)日：2022-07-05

申请号：US17023474

申请日：2020-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Davit Harutyunyan ,  Fei Jia ,  Frank Staals ,  Fuming Wang ,  Hugo Thomas Looijestijn ,  Cornelis Johannes Rijnierse ,  Maxim Pisarenco ,  Roy Werkman ,  Thomas Theeuwes ,  Tom Van Hemert ,  Vahid Bastani ,  Jochem Sebastiaan Wildenberg ,  Everhardus Cornelis Mos ,  Erik Johannes Maria Wallerbos

IPC: G03F7/20 ,  G05B13/04 ,  H01L21/66

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

公开(公告)号：US11327407B2

公开(公告)日：2022-05-10

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US10802408B2

公开(公告)日：2020-10-13

申请号：US16343168

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US20180307145A1

公开(公告)日：2018-10-25

申请号：US15951343

申请日：2018-04-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan Wildenberg ,  Marcel Hendrikus Maria Beems ,  Erik Johannes Maria Wallerbos

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70891

Abstract: A method of monitoring a device manufacturing process, the method including; obtaining an estimated time variation of a process parameter; determining, on the basis of the estimated time variation, a sampling plan for measurements to be performed on a plurality of substrates to obtain information about the process parameter; measuring substrates in accordance with the sampling plan to obtain a plurality of measurements; and determining an actual time variation of the process parameter on the basis of the measurements.