-
公开(公告)号:WO2021023602A1
公开(公告)日:2021-02-11
申请号:PCT/EP2020/071449
申请日:2020-07-29
Applicant: ASML NETHERLANDS B.V.
Inventor: SHAYEGAN SALEK, Mir Farrokh , HOWELL, Rafael C. , ZHENG, Yunan , WEI, Haiqing , CAO, Yu
IPC: G03F7/20 , G03F7/70283 , G03F7/705
Abstract: A method of simulating a pattern to be imaged onto a substrate using a photolithography system, includes obtaining a pattern to be imaged onto the substrate, smoothing the pattern, and simulating an image of the smoothed pattern. The smoothing may include application of a graphical low pass filter and the simulating may include application of edge filters from an edge filter library.
-
公开(公告)号:WO2020108902A1
公开(公告)日:2020-06-04
申请号:PCT/EP2019/079562
申请日:2019-10-29
Applicant: ASML NETHERLANDS B.V.
Inventor: BISWAS, Roshni , HOWELL, Rafael C. , ZHANG, Cuiping , JIA, Ningning , LIU, Jingjing , ZHANG, Quan
Abstract: Described herein is a method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
-
13.
公开(公告)号:WO2018121967A1
公开(公告)日:2018-07-05
申请号:PCT/EP2017/081744
申请日:2017-12-06
Applicant: ASML NETHERLANDS B.V.
Inventor: CAO, Yu , LU, Yen-Wen , LIU, Peng , HOWELL, Rafael C. , BISWAS, Roshni
Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
-
14.
公开(公告)号:WO2013178459A1
公开(公告)日:2013-12-05
申请号:PCT/EP2013/059834
申请日:2013-05-13
Applicant: ASML NETHERLANDS B.V.
Inventor: LIU, Xiaofeng , HOWELL, Rafael C.
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70483 , G03F7/705
Abstract: Described herein is a method for a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic imaging apparatus, the lithographic process having a plurality of design variables, the method comprising: calculating a gradient of each of a plurality of evaluation points or patterns of the lithographic process, with respect to at least one of the design variables; and selecting a subset of evaluation points from the plurality of evaluation points or patterns based on the gradient.
Abstract translation: 本文描述了一种用于使用光刻成像装置将设计布局的一部分成像到基板上的光刻工艺的方法,所述光刻工艺具有多个设计变量,所述方法包括:计算多个评估中的每一个的梯度 关于至少一个设计变量的光刻工艺的点或图案; 以及基于所述梯度从所述多个评估点或模式中选择评估点的子集。
-
公开(公告)号:EP4165471A1
公开(公告)日:2023-04-19
申请号:EP21727387.9
申请日:2021-05-14
Applicant: ASML Netherlands B.V.
Inventor: PENG, Xingyue , SHI, Zhan , HSU, Duan-Fu, Stephen , HOWELL, Rafael C. , LIU, Gerui
IPC: G03F7/20
-
16.
公开(公告)号:EP4449199A1
公开(公告)日:2024-10-23
申请号:EP22821529.9
申请日:2022-11-23
Applicant: ASML Netherlands B.V.
Inventor: PENG, Xingyue , JIA, Ningning , SHI, Zhan , HOWELL, Rafael C.
IPC: G03F1/36
-
公开(公告)号:EP4497035A1
公开(公告)日:2025-01-29
申请号:EP23708466.0
申请日:2023-02-28
Applicant: ASML Netherlands B.V.
Inventor: LUO, Ya , LU, Yen-Wen , CHEN, Been-Der , HOWELL, Rafael C. , ZHANG, Quan , ZHU, Zhangnan , CHEN, Xiaoshuang
-
-
-
-
-
-