公开(公告)号：WO2016162231A1

公开(公告)日：2016-10-13

申请号：PCT/EP2016/056710

申请日：2016-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： MOS, Everhardus, Cornelis ,  IGNATOVA, Velsilava, Angelova ,  JENSEN, Erik ,  KUBIS, Michael ,  SIMONS, Hubertus, Johannes, Gertrudus ,  TEN BERGE, Peter ,  WALLERBOS, Erik, Johannes, Maria ,  WILDENBERG, Jochem, Sebastiaan

IPC: H01L21/66 ,  G03F7/20

CPC classification number: G06F17/18 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7003 ,  G06F17/5009 ,  H01L22/12 ,  H01L22/20

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Abstract translation: 一种方法，包括针对表示拟合测量数据的数学模型的剩余不确定性的参数，针对测量数据拟合一个或多个数学模型以及用于测量数据的一个或多个测量采样方案与跨基板的测量数据的识别 一个或多个数学模型和/或一个或多个测量采样方案，参数越过阈值。

公开(公告)号：WO2013026598A1

公开(公告)日：2013-02-28

申请号：PCT/EP2012/062555

申请日：2012-06-28

Applicant: ASML NETHERLANDS B.V. ,  WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

Inventor： WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F1/44 ,  G03F7/70683

Abstract: A target structure including one or more periodic structures is formed on a substrate by a lithographic process. A image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from at least one region of interest within the image are used to determine a property of the periodic structure, for example asymmetry or overlay. To locate the ROI, a processing unit recognizes locations of a plurality of boundary features in the image of the target structure. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the ROI is greater than by recognizing only the boundaries of the periodic structure(s). The boundary features can be created by providing interruptions in a boundary region of the periodic structure. Regions of interest can be located in X and Y directions simultaneously, and with diffraction in X and Y directions simultaneously.

Abstract translation: 通过光刻工艺在衬底上形成包括一个或多个周期结构的靶结构。 在用辐射束照射目标结构的同时检测目标结构的图像，该图像使用非零次衍射辐射的第一部分形成，同时排除零级衍射辐射。 使用从图像内的至少一个感兴趣区域提取的强度值来确定周期性结构的属性，例如不对称或覆盖。 为了定位ROI，处理单元识别目标结构的图像中的多个边界特征的位置。 每个方向上边界特征的数量至少是目标结构内周期性结构边界数量的两倍。 定位ROI的准确性大于仅识别周期性结构的边界。 可以通过在周期性结构的边界区域中提供中断来创建边界特征。 感兴趣区域可以同时位于X和Y方向，同时在X和Y方向衍射。

公开(公告)号：WO2012010458A1

公开(公告)日：2012-01-26

申请号：PCT/EP2011/061822

申请日：2011-07-12

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

IPC: G03F7/20

CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

公开(公告)号：EP3467589A1

公开(公告)日：2019-04-10

申请号：EP17195151.0

申请日：2017-10-06

Applicant: ASML Netherlands B.V.

Inventor： JAK, Martin Jacobus Johan ,  QUINTANILHA, Richard ,  DEN BOEF, Arie Jeffrey ,  KUBIS, Michael

IPC: G03F7/20

Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

公开(公告)号：EP3961473A1

公开(公告)日：2022-03-02

申请号：EP20193506.1

申请日：2020-08-29

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

IPC: G06F30/398 ,  H01L21/027

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.