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公开(公告)号：WO2017067752A1
公开(公告)日：2017-04-27
申请号：PCT/EP2016/072873
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： TEN BERGE, Peter , MOS, Everhardus, Cornelis , VAN HAREN, Richard, Johannes, Franciscus , WARDENIER, Peter, Hanzen , JENSEN, Erik
Abstract: A method including modelling, by a computer system, a high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modelling, by the computer system, a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining, by the computer system, modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
Abstract translation: 一种方法，包括由计算机系统对使用误差数学模型的图案化系统中的图案形成装置进行构图的过程的高分辨率图案化误差信息建模，由计算机系统对 使用校正数学模型校正图案形成装置修改工具可以进行的图案化误差，校正数学模型具有与误差数学模型基本相同的分辨率，并且由计算机系统确定用于修改图案化的修改信息 装置使用图案形成装置修改工具，通过将校正数学模型应用于由误差数学模型建模的图案形成误差信息。
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公开(公告)号：WO2017067748A1
公开(公告)日：2017-04-27
申请号：PCT/EP2016/072852
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： VAN HAREN, Richard, Johannes, Franciscus , MOS, Everhardus, Cornelis , TEN BERGE, Peter , WARDENIER, Peter, Hanzen , JENSEN, Erik , CEKLI, Hakki, Ergun
IPC: G03F7/20
CPC classification number: G03F7/70625 , G03F7/705
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining, by a computer system, a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
Abstract translation: 一种方法，包括：获得关于涉及图案形成装置的图案化过程中的图案化错误的信息; 根据所述图案误差信息，通过修改装置修改所述图案误差引入的一段时间内确定非线性度; 以及由计算机系统基于所确定的非线性确定供修改装置使用的图案化误差偏移。
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3.发明申请
公开(公告)号：WO2022214267A1
公开(公告)日：2022-10-13
申请号：PCT/EP2022/056091
申请日：2022-03-09
Applicant: ASML NETHERLANDS B.V.
Inventor： KARA, Dogacan , JENSEN, Erik , WILDENBERG, Jochem, Sebastiaan , DECKERS, David, Frans, Simon , GULER, Sila , ASTUDILLO RENGIFO, Reinaldo, Antonio , YUDHISTIRA, Yasri , HILHORST, Gijs , CAICEDO FERNANDEZ, David, Ricardo , SPIERING, Frans, Reinier , KHO, Sinatra, Canggih , BLOM, Herman, Martin , KIM, Sang Uk , KIM, Hyun-Su
Abstract: A method for determining a substrate model for describing a first measurement dataset and a second measurement dataset relating to a performance parameter. The method comprises obtaining candidate basis functions for a plurality of substrate models. Steps 1 to 4 are performed iteratively for said first measurement dataset and said second measurement dataset until at least one stopping criterion is met so as to determine said substrate model, said steps comprising: 1. selecting a candidate basis function from said candidate basis functions; 2. updating a substrate model by adding the candidate basis function into this substrate model to obtain an updated substrate model; 3. evaluating the updated substrate model based on at least one of said first measurement dataset and said second measurement dataset; and 4. determining whether to include the basis function within the substrate model based on 10 the evaluation.
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4.发明申请
公开(公告)号：WO2020234028A1
公开(公告)日：2020-11-26
申请号：PCT/EP2020/063077
申请日：2020-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor： SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
IPC: G03F7/20
Abstract: The invention provides a method for determining a sampling scheme, which method comprises: - obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of said performance parameter over a second portion of the semiconductor substrate; and - determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.
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公开(公告)号：WO2018099690A1
公开(公告)日：2018-06-07
申请号：PCT/EP2017/078288
申请日：2017-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： VAN HAREN, Richard, Johannes, Franciscus , CALADO, Victor, Emanuel , VAN DIJK, Leon, Paul , WERKMAN, Roy , MOS, Everhardus, Cornelis , WILDENBERG, Jochem, Sebastiaan , JOCHEMSEN, Marinus , RAJASEKHARAN, Bijoy , JENSEN, Erik , URBANCZYK, Adam, Jan
Abstract: A method to change an etch parameter of a substrate etching process, the method comprising: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
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Patent Agency Ranking
公开(公告)号：WO2018197144A1
公开(公告)日：2018-11-01
申请号：PCT/EP2018/057961
申请日：2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor： WILDENBERG, Jochem, Sebastiaan , JOCHEMSEN, Marinus , JENSEN, Erik , WALLERBOS, Erik, Johannes, Maria , RIJNIERSE, Cornelis, Johannes , RAJASEKHARAN, Bijoy , WERKMAN, Roy , SCHOONUS, Jurgen, Johannes, Henderikus, Maria
IPC: G03F7/20 , G05B19/418
Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating (406) measurement results of performance parameters (fingerprints) with the recorded process characteristics (context); obtaining (408) a characteristic (context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining (410) a characteristic (context) of a subsequent process (exposure) in the sequence to be performed on the product unit; determining (412) a predicted performance parameter (fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (fingerprints) corresponding to the recorded characteristics; and determining (414, 416) corrections to be applied (418) to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.
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公开(公告)号：WO2017067765A1
公开(公告)日：2017-04-27
申请号：PCT/EP2016/073084
申请日：2016-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： TEN BERGE, Peter , MOS, Everhardus, Cornelis , VAN HAREN, Richard, Johannes, Franciscus , WARDENIER, Peter, Hanzen , JENSEN, Erik , KASTRUP, Bernardo , KUBIS, Michael , MULKENS, Johannes, Catharinus, Hubertus , DECKERS, David, Frans, Simon , HENKE, Wolfgang, Helmut , LEE, Joungchel
IPC: G03F7/20
CPC classification number: G03F1/72 , G03F7/70425 , G03F7/70625
Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
Abstract translation: 一种方法，包括：在由图案化系统的蚀刻工具处理之后获得图案的测量和/或模拟结果，基于所述测量结果确定由于蚀刻加载效应引起的图案化误差和/ 或模拟结果，并且由计算机系统基于图案化误差来创建用于修改图案形成装置和/或用于从蚀刻工具向上游调整图案化系统中的修改装置的修改信息，其中图案化错误被转换为 当根据修改信息修改图案形成装置和/或根据修改信息调整修改装置时，可校正的误差和/或减小到一定范围。
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公开(公告)号：WO2016162231A1
公开(公告)日：2016-10-13
申请号：PCT/EP2016/056710
申请日：2016-03-25
Applicant: ASML NETHERLANDS B.V.
Inventor： MOS, Everhardus, Cornelis , IGNATOVA, Velsilava, Angelova , JENSEN, Erik , KUBIS, Michael , SIMONS, Hubertus, Johannes, Gertrudus , TEN BERGE, Peter , WALLERBOS, Erik, Johannes, Maria , WILDENBERG, Jochem, Sebastiaan
CPC classification number: G06F17/18 , G03F7/705 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G03F9/7003 , G06F17/5009 , H01L22/12 , H01L22/20
Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.
Abstract translation: 一种方法，包括针对表示拟合测量数据的数学模型的剩余不确定性的参数，针对测量数据拟合一个或多个数学模型以及用于测量数据的一个或多个测量采样方案与跨基板的测量数据的识别 一个或多个数学模型和/或一个或多个测量采样方案，参数越过阈值。
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9.发明公开
公开(公告)号：EP4235306A2
公开(公告)日：2023-08-30
申请号：EP23173939.2
申请日：2020-05-11
Applicant: ASML Netherlands B.V.
Inventor： SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
IPC: G03F7/20
Abstract: The invention provides a method of obtaining a fingerprint model for modelling a spatial distribution of a performance parameter over a portion of a substrate, the method comprising: defining an initial fingerprint model related to the spatial distribution of the performance parameter over the portion as a parameterized combination of basis functions; determining parameter values for the parameterized combination of basis functions based on pre-knowledge, and determining the fingerprint model for modelling the spatial distribution of the performance parameter over the portion of the substrate, based on a measurement set representing the performance parameter over the portion of a set of one or more semiconductor substrates and the initial fingerprint model, whereby a ratio of at least two parameter values of the basis functions as determined in the initial fingerprint model is kept constant or at least part of the shape of the initial fingerprint model is maintained in the fingerprint model.
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10.发明公开
公开(公告)号：EP4320483A1
公开(公告)日：2024-02-14
申请号：EP22710625.9
申请日：2022-03-09
Applicant: ASML Netherlands B.V.
Inventor： KARA, Dogacan , JENSEN, Erik , WILDENBERG, Jochem, Sebastiaan , DECKERS, David, Frans, Simon , GULER, Sila , ASTUDILLO RENGIFO, Reinaldo, Antonio , YUDHISTIRA, Yasri , HILHORST, Gijs , CAICEDO FERNANDEZ, David, Ricardo , SPIERING, Frans, Reinier , KHO, Sinatra, Canggih , BLOM, Herman, Martin , KIM, Sang Uk , KIM, Hyun-Su
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