公开(公告)号：WO2018141450A1

公开(公告)日：2018-08-09

申请号：PCT/EP2017/082547

申请日：2017-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  DECKERS, David, Frans, Simon ,  WARDENIER, Peter, Hanzen

IPC: G03F7/20 ,  G03F1/72

Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

公开(公告)号：WO2017067752A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072873

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  MOS, Everhardus, Cornelis ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik

IPC: G03F1/70 ,  G03F1/72

CPC classification number: G03F1/70 ,  G03F1/72

Abstract: A method including modelling, by a computer system, a high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modelling, by the computer system, a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining, by the computer system, modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

Abstract translation: 一种方法，包括由计算机系统对使用误差数学模型的图案化系统中的图案形成装置进行构图的过程的高分辨率图案化误差信息建模，由计算机系统对 使用校正数学模型校正图案形成装置修改工具可以进行的图案化误差，校正数学模型具有与误差数学模型基本相同的分辨率，并且由计算机系统确定用于修改图案化的修改信息 装置使用图案形成装置修改工具，通过将校正数学模型应用于由误差数学模型建模的图案形成误差信息。

公开(公告)号：WO2021239334A1

公开(公告)日：2021-12-02

申请号：PCT/EP2021/060157

申请日：2021-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： ROY, Sarathi ,  HENKE, Wolfgang, Helmut ,  TEN BERGE, Peter

IPC: G03F7/20 ,  G01N21/95 ,  H01L21/02

Abstract: Disclosed is a method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method comprises determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity (SG) defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.

公开(公告)号：WO2018086795A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/074439

申请日：2017-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  DE RUITER, Christiaan, Theodoor

IPC: G03F7/20

Abstract: Disclosed is a method, and associated system for determining an optimized set of measurement locations for measurement of a parameter related to a structure applied to a substrate by a lithographic process. The method comprises determining a first set of parameter values from a first set of measurements of first structures across a first plurality of locations, for example from target measurements and determining a second set of parameter values from a second set of measurements of second structures across a second plurality of locations, for example using an SEM or e-beam tool on product structures. A correlation is determined between said first set of parameter values and said second set of parameter values and used to determine the optimized set of measurement locations.

Abstract translation: 公开了用于确定用于测量与通过光刻工艺应用于衬底的结构有关的参数的测量位置的优化组的方法和相关系统。 该方法包括例如根据目标测量值从第一多个位置上的第一结构的第一组测量结果确定第一组参数值，并且确定来自第二组结构中的第二结构的第二组测量值的第二组参数值 第二多个位置，例如在产品结构上使用SEM或电子束工具。 确定所述第一组参数值和所述第二组参数值之间的相关性，并将其用于确定最佳的一组测量位置。

公开(公告)号：WO2017067757A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072960

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  SLOTBOOM, Daan, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72

Abstract: A method including: determining first error information (1310) based on a first measurement and/or simulation result (1300) pertaining to a first patterning device in a patterning system; determining second error information (1330) based on a second measurement and/or simulation result (1320) pertaining to a second patterning device in the patterning system; determining (1340) a difference between the first error information and the second error information; and creating, by a computer system, modification information (1360) for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.

Abstract translation: 一种方法，包括：基于与图案化系统中的第一图案形成装置有关的第一测量和/或模拟结果（1300）来确定第一误差信息（1310） 基于与图案化系统中的第二图案形成装置有关的第二测量和/或模拟结果（1320）确定第二误差信息（1330） 确定（1340）第一错误信息和第二错误信息之间的差异; 以及由计算机系统基于所述第一错误信息和所述第二错误信息之间的差异来创建用于所述第一图案形成装置和/或所述第二图案形成装置的修改信息（1360），其中所述第一错误信息与所述第二错误信息 根据修改信息修改第一图案形成装置和/或第二图案形成装置之后，将第二误差信息减小到一定范围内。

公开(公告)号：WO2017067755A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072926

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  MULKENS, Johannes, Catharinus, Hubertus ,  KASTRUP, Bernardo ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72

Abstract: A method including identifying that an area of a first substrate includes a hotspot (710) based on a measurement and/or simulation result pertaining to a patterning device in a patterning system, determining first error information (720) at the hotspot, and creating (730), by a computer system, first modification information for modifying the patterning device (said information to be transmitted with the patterning device to the patterning modification tool at 740) based on the first error information to obtain a modified patterning device.

Abstract translation: 包括基于与图案化系统中的图案形成装置有关的测量和/或模拟结果来识别第一基板的区域包括热点（710）的方法，确定第一误差信息（720） ），并且由计算机系统基于第一错误信息来创建（730）用于修改图案形成装置的第一修改信息（在740处将用图案形成装置向图案形成修改工具发送的信息）以获得 一个修改过的图案装置。

公开(公告)号：WO2021175527A1

公开(公告)日：2021-09-10

申请号：PCT/EP2021/052492

申请日：2021-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  STEEN, Steven, Erik ,  SMORENBERG, Pieter, Gerardus, Jacobus ,  ELBATTAY, Khalid

IPC: G03F7/20 ,  H01L21/762 ,  H01L21/20 ,  H01L23/00 ,  H01L21/18

Abstract: Disclosed is a method for controlling a process of manufacturing semiconductor devices, the method comprising: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data comprising data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on said bonded substrate metrology data, the determining a correction comprising determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

公开(公告)号：WO2018202361A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/058096

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  TABERY, Cyrus, Emil ,  VAN GORP, Simon, Hendrik, Celine ,  LIN, Chenxi ,  SONNTAG, Dag ,  CEKLI, Hakki, Ergun ,  ALVAREZ SANCHEZ, Ruben ,  LIU, Shih-Chin ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  DE RUITER, Christiaan, Theodoor ,  TEN BERGE, Peter ,  LERCEL, Michael, James ,  DUAN, Wei ,  GUITTET, Pierre-Yves, Jerome, Yvan

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including measured electrical characteristics from previously processed substrates and process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：WO2017067748A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072852

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  MOS, Everhardus, Cornelis ,  TEN BERGE, Peter ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik ,  CEKLI, Hakki, Ergun

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining, by a computer system, a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

Abstract translation: 一种方法，包括：获得关于涉及图案形成装置的图案化过程中的图案化错误的信息; 根据所述图案误差信息，通过修改装置修改所述图案误差引入的一段时间内确定非线性度; 以及由计算机系统基于所确定的非线性确定供修改装置使用的图案化误差偏移。

公开(公告)号：WO2006024908A3

公开(公告)日：2006-03-09

申请号：PCT/IB2005/002359

申请日：2005-06-30

Applicant: ASML NETHERLANDS B.V. ,  TEN BERGE, Peter

Inventor： TEN BERGE, Peter

IPC: G03F7/00

Abstract: An imprint lithography apparatus comprising a template (34), a substrate table (31) and an alignment system. (35, 36, 37) arranged to align. the template (34) to a substrate alignment t mark (39; 39`) provided on a substrate (30). The substrate table (31) is arranged to support the substrate (30) having a first surface (32) to be imprinted andd a second surface (50) facing the substrate table (31). The apparatus is characterised in that the substrate alignment mark (39; 39') is provided on the second surface (50) of the substrate (30), and that the substrate table (31) further comprises a substrate table optical. system for allowing the substrate alignment mark (39; 39') to be viewed by the alignment system. (35. 36, 37). The invention further extends to a device manufacturing method and a device manufactured thereby.