公开(公告)号：US20190214318A1

公开(公告)日：2019-07-11

申请号：US16328319

申请日：2017-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Mark John MASLOW ,  Johannes Catharinus Hubertus MULKENS ,  Peter TEN BERGE ,  Franciscus VAN DE MAST ,  Jan-Willem GEMMINK ,  Liesbeth REIJNEN

IPC: H01L21/66 ,  G03F7/36 ,  G03F7/20 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L22/20 ,  G03F7/36 ,  G03F7/70616 ,  G03F7/70683 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/67253

Abstract: A substrate, including a substrate layer; and an etchable layer on the substrate layer, the etchable layer including a patterned region thereon or therein and including a blank region of sufficient size to enable a bulk etch rate of an etch tool for etching the blank region to be determined.

公开(公告)号：US20180307135A1

公开(公告)日：2018-10-25

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Everhardus Cornelis MOS ,  Richard Johannes Franciscus VAN HAREN ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Bernardo KASTRUP ,  Michael KUBIS ,  Johannes Catharinus Hubertus MULKENS ,  Davis Frans Simon DECKERS ,  Wolfgang Helmut HENKE ,  Joungchel LEE

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03B27/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US20180299770A1

公开(公告)日：2018-10-18

申请号：US15769337

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Johannes Catharinus Hubertus MULKENS ,  Bernardo KASTRUP ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F1/72 ,  G03F1/36 ,  G06F17/50

Abstract: A method including identifying that an area of a first substrate includes a hotspot based on a measurement and/or simulation result pertaining to a patterning device in a patterning system, determining first error information at the hotspot, and creating first modification information for modifying the patterning device (e.g., the information to be transmitted with the patterning device to a patterning modification tool) based on the first error information to obtain a modified patterning device.

公开(公告)号：US20180252998A1

公开(公告)日：2018-09-06

申请号：US15765489

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Daan Maurits SLOTBOOM ,  Richard Johannes VAN HAREN ,  Peter Hanzen WARDENIER

IPC: G03F1/72 ,  G03F1/84

Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.